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    2F SOT23 Search Results

    2F SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    2F SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 2f 3

    Abstract: MMBT2222A MMBT2907A marking 2f
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR


    Original     		PDF OT-23 MMBT2907A MMBT2222A) -10mA -500mA -150mA -15mA -500mA -50mA marking 2f 3 MMBT2222A MMBT2907A marking 2f

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR


    Original     		PDF OT-23 MMBT2907A OT-23 MMBT2222A) Temperature-10V -10mA -500mA -150mA -15mA -500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F


    Original     		PDF OT-23 MMBT2907A OT-23 MMBT2222A) -500mA -150mA -15mA -500mA -50mA

    CMBT2907

    Abstract: CMBT2907A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBT2907 CMBT2907A 500mA; C-120 CMBT2907 CMBT2907A

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBT2907 CMBT2907A 500mA; C-120

    2SA1037KGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)


    Original     		PDF 2SA1037KGP OT-23) OT-23 150mW 120mW 2SA1037KGP

    CMBT2907

    Abstract: CMBT2907A
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF ISO/TS16949 OT-23 CMBT2907 CMBT2907A 500mA; C-120 CMBT2907 CMBT2907A

    2F PNP SOT23

    Abstract: marking 2f 2f transistor SOt23
    Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)


    Original     		PDF MMBT2907A OT-23 OT-23 MMBT2222A) -150mA -15mA -10mA -500mA 2F PNP SOT23 marking 2f 2f transistor SOt23

    Untitled

    Abstract: No abstract text available
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT2907A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2F B E SOT-23


    Original     		PDF MMBT2907A OT-23 350mWatts OT-23 10mAdc, 30Vdc, IC/10

    BC849

    Abstract: BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS


    Original     		PDF ISO/TS16949 OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC849B BC849C BC850 BC850B BC850C

    2f bc850

    Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G


    Original     		PDF OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C 2f bc850 BC849 BC849B BC849C BC850 BC850B BC850C

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


    Original     		PDF MMBT2907A MMBT2907A OT-23 QW-R206-030

    pnp 2f

    Abstract: No abstract text available
    Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


    Original     		PDF MMBT2907A MMBT2907A OT-23 QW-R206-030 pnp 2f

    MARKING 2F SOT23

    Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
    Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF BC850 OT-23 MARKING 2F SOT23 sot23 marking 2f 2f bc850 BC850 marking 2f 3

    PN2907A

    Abstract: No abstract text available
    Text: PZT2907A MMBT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF PZT2907A MMBT2907A OT-23 OT-223 PN2907A

    CBVK741B019

    Abstract: F63TNR MMBT2907A PN2222N PN2907A PZT2907A D3000
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMBT2907A PZT2907A OT-23 OT-223 CBVK741B019 F63TNR MMBT2907A PN2222N PN2907A PZT2907A D3000

    PN2222N

    Abstract: CBVK741B019 F63TNR MMBT2907A PN2907A PZT2907A 2F PNP SOT23
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMBT2907A PZT2907A OT-23 OT-223 PN2222N CBVK741B019 F63TNR MMBT2907A PN2907A PZT2907A 2F PNP SOT23

    ic 701

    Abstract: 602 SOT MMBT2907A
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBT2907A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2F B E SOT-23 Electrical Characteristics @ 25°C Unless Otherwise Specified


    Original     		PDF MMBT2907A OT-23 350mWatts OT-23 10mAdc, 30Vdc, IC/10 ic 701 602 SOT MMBT2907A

    pn2907a fairchild

    Abstract: MMBT2907A PN2907A PZT2907A 2f pnp
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMBT2907A PZT2907A OT-23 OT-223 pn2907a fairchild MMBT2907A PN2907A PZT2907A 2f pnp

    marking code nt amplifier

    Abstract: MARKING 2907A 2907A BF
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF PN2907A MMBT2907A PZT2907A PN2907A MMBT2907A OT-23 OT-223 O-92-3 marking code nt amplifier MARKING 2907A 2907A BF

    Untitled

    Abstract: No abstract text available
    Text: FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2907 - 2B FMMT2907A - 2F FMMT2907R - 4P FMMT2907AR - 5P ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF FMMT2907 FMMT2907A FMMT2907 FMMT2907A FMMT2907R FMMT2907AR 200fts.

    B 660 TG

    Abstract: No abstract text available
    Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BC847 BC849 BC846 BC848 BC850 BC848B BC846A BC846B BC848C BC849B B 660 TG

    PN2907A

    Abstract: sot-23 M
    Text: / MMPQ2907/ NMT2907 I PZT2907A Discrete POWER & Signal Technologies National Semi conduct or ' " MMBT2907A PN2907A PZT2907A SOT-23 SOT-223 M ark: 2F NMT2907 PN2907A I MMBT2907A MMPQ2907 SOIC-16 C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


    OCR Scan     		PDF MMPQ2907/ NMT2907 PZT2907A PN2907A MMBT2907A OT-23 OT-223 PN2907A sot-23 M

    PN2907A

    Abstract: No abstract text available
    Text: PN2907A MMBT2907A TO-92 SOT-23 PZT2907A SOT-223 Mark: 2F MMPQ2907 NMT2907 SOT-6 Bi Mark: 200 SOIC-16 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from


    OCR Scan     		PDF PN2907A MMBT2907A OT-23 PZT2907A OT-223 MMPQ2907 NMT2907 SOIC-16 QD33415 PN2907A