2E4 DIODE Search Results

5383B

Contextual Info: 1N 5383B.1N5388B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 

Contextual Info: 1N 5383B.1N5388B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 

Contextual Info: 1N 5383B.1N5388B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 

Contextual Info: 1N 5383B.1N5388B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode

Contextual Info: 1N 5347B.1N 5382B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 

MAX3580

Abstract: GB20600 APP4258
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: max3580, dvb-t, gb20600, tuner, terrestrial, nordig, mbrai Jun 24, 2008 APPLICATION NOTE 4258 Application considerations for the MAX3580 DVB-T tuner By: Bryan Irons Abstract: This application note contains the information necessary for implementing a MAX3580 DVB-T tuner

5347B

Contextual Info: 1N 5347B.1N 5382B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 

OA 10 diode

Contextual Info: SK 75 TAE FIHK FIIKP F+IK TOR UV L F F <O- R WE X$> CYEE CZEE HMUVOLJCZ Characteristics Symbol Conditions SEMITOP 2 Thyristor and Diode separated in the same housing SK 75 TAE Target Data Features # $%&' * +,-./0 # 10, -)2,3 &%40*.0/ # 5,(* *2(0-6,2 (07 .-%8(*.%0

Contextual Info: 1N 5347B.1N 5382B 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode  9    8 2< : *  * 1 &% =   '  7  9    8  > 0  ? 1 @<        A   3  * BC1 @2        A 

K580

Abstract: 5382B i5ij K8/selenium rectifier
Contextual Info: 1N 5347B.1N 5382B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 2 : * 8   9   Absolute Maximum Ratings Symbol Conditions Axial lead diode

Contextual Info: SK100B SEMITOP 2 Bridge Rectifier DPTU DPPUI D=PU O= S ACC V <6477 %0+4)*.%0? D YCC ALCC D WCC ANCC <R- S WC X$? TZACC>CW TZACC>AN A[CC ABCC TZACC>AB Symbol Conditions Values Units O= R- S WC X$ ACC V OQTU RE¥ S NM X$] AC &RE¥ S AMC X$] AC &RE¥ S NM X$] WILJJJAC &-

Contextual Info: SK 95 D SEMITOP 2 Bridge Rectifier COPQ COOQH C=OQ N= R SL T <6477 %0+4)*.%0U C WBB @MBB C WBB @MBB <V- R WB X$U PY SL = BW PY SL = @M @ABB @ABB PY SL = @A Symbol Conditions N= V- R WB X$ NZPQ .^* Values Units SL T VD[ R ML X$¥ @B &VD[ R @LB X$¥ @B &VD[ R ML X$¥ WHKIII@B &-

Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Contextual Info: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

Contextual Info: SK 40 DH SEMITOP 3 GSPR GSSRJ G=SR T= U VO W <6477 %0+4)*.%0? G ZFF DMFF G XFF DOFF <Q- U XF Y$? P[ VF =5 FX P[ VF =5 DO D¥FF DEFF P[ VF =5 DE Symbol Conditions Values Units T= Q- U XF Y$ VO W T]PR ^ TQPR QA_ U ON Y$` DF &QA_ U DON Y$` DF &QA_ U ON Y$` DF &-

spice model solid state relay

Abstract: solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model
Contextual Info: SPICE Device Model Si4768CY Vishay Siliconix Si4768CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4768CY N-Channel Synchronous MOSFETs with Break-Before-Make.

Contextual Info: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

Contextual Info: HUF75344G3, HUF75344P3, HUF75344S3, HUF75344S3S Semiconductor Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

76107d

Abstract: TC298
Contextual Info: HUF76107D3, HUF76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

76107d

Abstract: MOSFET 76107D TA76107 ta7610 HUF76107D3S HUF76107D3ST TB334 HUF76107D3 AN7254 AN9321
Contextual Info: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

swhyste

Abstract: TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY Si4770CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE
Contextual Info: SPICE Device Model Si4770CY Vishay Siliconix SI4770CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4770CY N-channel Synchronous MOSFETs with Break-Before-Make.

HUF76107P3

Abstract: 76107P AN7254 AN7260 AN9321 AN9322 TB334 TC298
Contextual Info: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs File Number 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

STGD10HF60KD

Contextual Info: STGD10HF60KD 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Preliminary data Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Switching losses include diode recovery energy ■ Short-circuit rated

TC298

Contextual Info: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using