Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2A TRANSISTOR SOT 23 Search Results

    2A TRANSISTOR SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    2A TRANSISTOR SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT3904 jiangsu

    Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER


    Original     		PDF OT-23 MMBT3906 MMBT3904 MMBT3904 jiangsu MMBT3906 MMBT3906 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER


    Original     		PDF OT-23 MMBT3906 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA

    Marking 2A

    Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
    Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — As complementary type, the NPN transistor MMBT3904 is Recommended — Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBT3906 OT-23 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA, 100MHz Marking 2A 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


    Original     		PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    SMD TRANSISTOR MARKING 2A pnp

    Abstract: MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE


    Original     		PDF ISO/TS16949 OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a

    RF transistor marking IN SOT-89

    Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
    Text: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150


    Original     		PDF TSB1424 OT-89 OT-23 -100mA TSD2150 TSB1424CY TSB1424CX RF transistor marking IN SOT-89 RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89

    SMD TRANSISTOR MARKING 2A pnp

    Abstract: CMBT3906
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp CMBT3906

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A


    Original     		PDF OT-23 CMBT3906 C-120

    MMBT8550

    Abstract: No abstract text available
    Text: MMBT8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package


    Original     		PDF MMBT8550 OT-23 MMBT8550

    MMBT8050

    Abstract: MMBT8050 BR mmbt8050 sot-23
    Text: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package


    Original     		PDF MMBT8050 OT-23 MMBT8050 MMBT8050 BR mmbt8050 sot-23

    KST3906

    Abstract: WH*s
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23 KST3906 WH*s

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23

    MARKING 2A

    Abstract: MMBT3906 MMBT3904
    Text: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features — As complementary type, the NPN transistor MMBT3904 is recommended — Epitaxial planar die construction — Marking: 2A Dimensions in inches and millimeters Maximum Ratings


    Original     		PDF MMBT3906 OT-23 MMBT3904 -10uA, -50mA, -10mA 100MHz -10mA MARKING 2A MMBT3906

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT3906 C-120

    Untitled

    Abstract: No abstract text available
    Text: FSB660/FSB660A July 1998 FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol


    Original     		PDF FSB660/FSB660A FSB660 FSB660A OT-23) FSB660/FSB660A

    TRANSISTOR W25

    Abstract: FMMT549
    Text: FMMT549 FMMT549 C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted


    Original     		PDF FMMT549 OT-23) TRANSISTOR W25 FMMT549

    Untitled

    Abstract: No abstract text available
    Text: FSB660/FSB660A FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF FSB660/FSB660A FSB660 FSB660A OT-23)

    MMBT3906 UTC

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC

    FSB560

    Abstract: FSB560A
    Text: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF FSB560/FSB560A FSB560 FSB560A OT-23) FSB560A

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 3 2A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 -10mA -50mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: ; S v m Se m i ; SOT-23 5YM5EMI SEMICONDUCTOR MMBT2907LT1 Plastic Encapsulate Transistors transistor SOT — 23 c pnp 1. BASE 2. EM IH E R 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W Tamb=25 °C) 2A Collector current Icm : -0.6 1.3 A Collector base voltage


    OCR Scan     		PDF OT-23 MMBT2907LT1 100MHz MMBT2907 -50mA OT-23 950TPY 037TPY 550REF 022REF

    Untitled

    Abstract: No abstract text available
    Text: : S v m Se m i : 5YM5EMI 5EMIC0 MDUCT0 R SOT -23 Plastic Encapsulate Transistors SOT — 23 BCW61 C TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.25 W Collector current Icm : -0.1 A 2A (Tamb=25 *C) 1.3 4H Collector base voltage


    OCR Scan     		PDF BCW61 OT-23 950TPY 037TPY 550REF 022REF

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTO R tm July 1998 FMMT560 / FMMT560A B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol


    OCR Scan     		PDF FMMT560 FMMT560A OT-23) FMMT560/FMMT560A FMMT560 100MHz