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SEI Stackpole Electronics Inc WW2ADB39R2 RES 39.2 OHM 0.5% 2.5W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	WW2ADB39R2	Bulk			1,000	1 - 10 - 100 - 1000 $0.37612 10000 $0.37612	Buy Now
Avnet Americas	WW2ADB39R2	Bulk		13 Weeks	1,000	1 - 10 - 100 - 1000 $0.392 10000 $0.3696	Buy Now
Mouser Electronics	WW2ADB39R2					1 - 10 - 100 - 1000 $0.376 10000 $0.376	Get Quote
NAC	WW2ADB39R2				1,000	1 - 10 - 100 - 1000 $0.933 10000 $0.7	Buy Now
Amphenol Aerospace F9-6882A-DB3 2M ACCESSO
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DigiKey	F9-6882A-DB3	Bulk			25	1 - 10 - 100 $169.872 1000 $169.872 10000 $169.872	Buy Now
Amphenol Corporation F9-6882A-DB3 - Bulk (Alt: F9-6882A-DB3)
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Avnet Americas	F9-6882A-DB3	Bulk		24 Weeks	25	1 - 10 - 100 $105.5411 1000 $100.2197 10000 $100.2197	Buy Now
Mouser Electronics	F9-6882A-DB3					1 - 10 - 100 $182.01 1000 $182.01 10000 $182.01	Get Quote
ITT Interconnect Solutions DPX2AD-B30C4P67P-33B-0001 DPX2AD-B30C4P67P-33B-0001 - Bulk (Alt: DPX2AD-B30C4P67P-33B-0001)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	DPX2AD-B30C4P67P-33B-0001	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TE Connectivity SRK02-MDB-32A-001 Automotive Connectors FLANGE RECP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SRK02-MDB-32A-001		140			1 $59.97 10 $52.61 100 $48.9 1000 $46.2 10000 $46.2	Buy Now

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2A DB3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
M12L2561616A-6TIG2A Abstract: No abstract text available Text: ESMT M12L2561616A 2A Operation Temperature Condition -40°C~85°C SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES          ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation	Original	M12L2561616A M12L2561616A-5TIG2A M12L2561616A-5BIG2A M12L2561616A-6TIG2A M12L2561616A-6BIG2A M12L2561616A-7TIG2A M12L2561616A-7BIG2A 200MHz 166MHz	PDF
Untitled Abstract: No abstract text available Text: ESM T M13S5121632A 2A DDR SDRAM 8M x 16 Bit x 4 Banks Double Data Rate SDRAM Features JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differential clock inputs (CLK and CLK )	Original	M13S5121632A	PDF
Untitled Abstract: No abstract text available Text: ESM T M12L2561616A 2A Operation Temperature Condition -40 C~85 C SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION FEATURES          JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation	Original	M12L2561616A M12L2561616A-5TIG2A 200MHz M12L2561616A-5BIain	PDF
Untitled Abstract: No abstract text available Text: ESM T M13S2561616A 2A Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )	Original	M13S2561616A	PDF
Untitled Abstract: No abstract text available Text: ESM T M12L2561616A 2A SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION FEATURES „ „ „ „ „ „ „ „ „ „ JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs	Original	M12L2561616A M12L2561616A-5TG2A 200MHz M12L2561616A-5Bain	PDF
SDRAM Abstract: M12L2561616A-5T 54-lead M12L2561616A Text: ESMT M12L2561616A 2A Automotive Grade SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs	Original	M12L2561616A M12L2561616A SDRAM M12L2561616A-5T 54-lead	PDF
DDR SDRAM Abstract: No abstract text available Text: ESMT M13S2561616A 2A Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK )	Original	M13S2561616A DDR SDRAM	PDF
Untitled Abstract: No abstract text available Text: ESM T M13S2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition	Original	M13S2561616A	PDF
M12L2561616A-5TG2A Abstract: M12L2561616A-7TG2A M12L2561616A-6TG2A Text: ESMT M12L2561616A 2A SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency ( 2 & 3 )	Original	M12L2561616A M12L2561616A-5TG2A M12L2561616A-5BG2A M12L2561616A-6TG2A M12L2561616A-6BG2A M12L2561616A-7TG2A M12L2561616A-7BG2A 200MHz 166MHz	PDF
Untitled Abstract: No abstract text available Text: ESM T M12L2561616A 2A Automotive Grade SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION „ „ „ „ The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous design allows precise cycle	Original	M12L2561616A M12L2561616A	PDF
Untitled Abstract: No abstract text available Text: ESMT M13S2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition	Original	M13S2561616A	PDF
Untitled Abstract: No abstract text available Text: 8 7 6 THE INFORMATION CONTAINED IN THIS DRAWING IS THE SOLE PROPERTY OF L-COM, INC. ANY REPRODUCTION IN PART OR WHOLE WITHOUT THE WRITTEN PERMISSION OF L-COM, INC. IS PROHIBITED. D 4 5 3 2 1 REVISIONS RoHS Compliant  4X 4-40 UNC-2A JACKSCREW DATE DESCRIPTION	Original	ECN3138: CSM-FS01 DB37M/M CSM37MM CSM37MM	PDF
Untitled Abstract: No abstract text available Text: ESM T M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition	Original	M13S2561616A	PDF
Untitled Abstract: No abstract text available Text: ESMT M13L2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition	Original	M13L2561616A	PDF

DDR SDRAM Abstract: esmt m13s2561616a Text: ESMT M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition	Original	M13S2561616A DDR SDRAM esmt m13s2561616a	PDF
Untitled Abstract: No abstract text available Text: 8 7 4 5 6 3 2 REV E DESCRIPTION ECN 3779: DEFINED COLOR TO LIGHT GRAY, NEW FORMAT 4X, 4-40UNC-2A THUMBSCREW CHANGED BY D.FRISIELLO 2X, MOLDED PVC STRAIN RELIEF WITH 360° METAL FOIL SHIELD COLOR: LIGHT GRAY "J1" D "J2" UL STYLE 2464 37 CONDUCTOR CABLE PVC JACKET, COLOR: LIGHT GRAY	Original	4-40UNC-2A CRMN-FS01 DB37F/F CRMN37FF CRMN37FF	PDF
VMP4 Abstract: db3 c322 db3 c314 b30 c250 db3 c235 db3 c248 b30 c250 a2 db3 c244 b30 c300 - 1 FPS009-2405-0 Text: 8 D 7 6 5 4 2 1 D TP10 12V TO 14V DC INPUT R248 0R100 3V3 I limit = 0.1V / R . about 2.9A CR1 1V8 F1 STPS340U 3 J1 MP179_2.1mm 1 2 3 2A C256 2.2µF R257 0R100 TP11 + C18 470uF 25V TP17 U4 5 3V3 V+ 1 8 2 7 3 6 4 5 L3 22uH 3.8A + C22 220uF 16V 3 SHDN 2 3/5	Original	0R100 STPS340U 470uF 220uF 100NF IRF7425 MAX1626ESA VMP4 db3 c322 db3 c314 b30 c250 db3 c235 db3 c248 b30 c250 a2 db3 c244 b30 c300 - 1 FPS009-2405-0	PDF
b929 Abstract: DCD-725 d6849 A277D ad9a E7834 Text: 1234546789A BCDE4F6CA1ADA 2AAA8 A!"#A$%CA"&A A A 12324567829A4BCDBE37 F25D4297 "04A B4'%5A !FD7A 467E4.76A D.A 2A 52.9A 7A E7.9A .D682A 767E4.76A 779DCD84FA 576A .D682A 5D946D86A 492D829D78A 28FA F:82CDE.A	Original	234546789A 12324567829A4BCDBE37 467E4. 767E4. 779DCD84FA 946D86 D829D78 82CDE 2664A b929 DCD-725 d6849 A277D ad9a E7834	PDF
tba 450 Abstract: dc46a GUNN DIODE plessey Text: GEC PLESSEY SENICONDS PACKAGED DETECTOR MODULES 43E D • 3?t.asaa oaisabi m ■ plsb 'X -o'i-o 'j DB3031 Germanium Backward Diode Detector Modules • • • • • • 0-1-18 GHz frequency range High sensitivity at zero bias High dynamic range > 4 5 d B	OCR Scan	DB3031 17dBmf 1-18GHz tba 450 dc46a GUNN DIODE plessey	PDF
diac vbo 10V Abstract: diac 5v vbo Text: DB3, DB4 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Trigger-Dioden (DIAC) Version 2004-10-01 Ø 1.9 Peak pulse current Max. Triggerimpuls 3.9 62.5 Breakover voltage Durchbruchsspannung Glass case Glasgehäuse Ø 0.52 Dimensions / Maße in mm	Original	DO-35 OD-27 diac vbo 10V diac 5v vbo	PDF
diac dB3 Abstract: db3 diac DIAC DB3 EQUIVALENT diac DB3 application note datasheet DIAC diac 5v SOD-27 DIAC DB4 DIAC diac 5v vbo Text: DB3 . DB4 DB3 . DB4 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung 3.9 Type 62.5 Ø 1.9 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Glass case Glas-Gehäuse	Original	DO-35 OD-27 diac dB3 db3 diac DIAC DB3 EQUIVALENT diac DB3 application note datasheet DIAC diac 5v SOD-27 DIAC DB4 DIAC diac 5v vbo	PDF
DB31 Abstract: db3 diac diac 5v vbo DIAC DIAC DB3 Text: DB3 , DB4 , DB31 DB3 , DB4 , DB31 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Triggerdioden (DIAC) Version 2012-06-12 Breakover voltage Durchbruchspannung 3.9 Type 62.5 Ø 1.9±0.07 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Glass case	Original	DO-35 OD-27 DB31 db3 diac diac 5v vbo DIAC DIAC DB3	PDF
Untitled Abstract: No abstract text available Text: DB3 . DB4 DB3 . DB4 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung 3.9 Type 62.5 Ø 1.9 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Glass case Glas-Gehäuse	Original	DO-35 OD-27	PDF
SOD-27 Abstract: DB31 DB32 diac 5v vbo Text: DB3 , DB4 , DB31 , DB32 DB3 , DB4 , DB31 , DB32 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Triggerdioden (DIAC) Version 2012-07-03 Breakover voltage Durchbruchspannung ±0.4 3.9 Type 62.5 ±3 Ø 1.9 ±0.1 Ø max 0.5 28 . 45 V Peak pulse current	Original	DO-35 OD-27 SOD-27 DB31 DB32 diac 5v vbo	PDF

2A DB3 Search Results

2A DB3 Price and Stock

SEI Stackpole Electronics Inc WW2ADB39R2

Amphenol Aerospace F9-6882A-DB3

Amphenol Corporation F9-6882A-DB3

ITT Interconnect Solutions DPX2AD-B30C4P67P-33B-0001

TE Connectivity SRK02-MDB-32A-001

2A DB3 Datasheets Context Search

M12L2561616A-6TIG2A

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SDRAM

DDR SDRAM

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M12L2561616A-5TG2A

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DDR SDRAM

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VMP4

b929

tba 450

diac vbo 10V

diac dB3

DB31

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SOD-27