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    2SD129 Search Results

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    2SD129 Price and Stock

    Panasonic Electronic Components 2SD12950RL

    TRANS NPN 40V 1.5A U-G2
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    DigiKey 2SD12950RL Reel
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    2SD12950RL Cut Tape
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    2SD12950RL Digi-Reel 1
    • 1 $0.96
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    ROHM Semiconductor 2SD1292T103Q

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SD1292T103Q 12,689
    • 1 $0.805
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    ROHM Semiconductor 2SD1292

    TRANSISTOR,BJT,NPN,80V V(BR)CEO,2A I(C),TO-92
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    Quest Components 2SD1292 3,760
    • 1 $5.2182
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    • 1000 $2.6091
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    Others 2SD1293M

    TRANSISTOR,BJT,NPN,80V V(BR)CEO,2A I(C),SIP
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    Quest Components 2SD1293M 1,533
    • 1 $1.185
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    Renesas Electronics Corporation 2SD1297

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SD1297 544
    • 1 $3.741
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    • 100 $3.741
    • 1000 $2.0576
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    2SD129 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD129 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD129 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD129 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD129 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD129 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD129 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD129 Unknown Transistor Replacements Scan PDF
    2SD129 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD129 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD129 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD129 Unknown Cross Reference Datasheet Scan PDF
    2SD129 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD129 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD129 Toshiba Japanese Transistor Data Book Scan PDF
    2SD1290 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1290 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1290 Unknown Cross Reference Datasheet Scan PDF
    2SD1290 Unknown Silicon NPN Triple Diffused Mesa Transistor Scan PDF
    2SD1290 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1290 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SD129 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB0968

    Abstract: 2SD1295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.75±0.1 2.3±0.1 (5.3) (4.35) (3.0) 4.6±0.1 • Absolute Maximum Ratings TC = 25°C Unit 50 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SD1295 SC-63 2SB0968 2SD1295

    2SD1294

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD1294 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Wide area of safe operation ·High DC current gain ·Darlington APPLICATIONS ·Power regulator for line operated TV PINNING PIN DESCRIPTION


    Original     		PDF 2SD1294 100mA 2SD1294

    2SD1294

    Abstract: SC-65
    Text: NPN SILICON DARLINGTON TRANSISTOR 2SD1294 SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25 C)


    Original     		PDF 2SD1294 SC-65 2SD1294 SC-65

    2SB968

    Abstract: 2SD1295 ic 731
    Text: Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency output amplification Complementary to 2SD1295 2.3±0.1 1 2 1:Base 2:Collector 3:Emitter U Type Package 3 Ta=25˚C Parameter Symbol Ratings Unit


    Original     		PDF 2SB968 2SD1295 200MHz 2SB968 2SD1295 ic 731

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm • Features 0.75±0.1 2.3±0.1 4.6±0.1 Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SD1295 2SB0968

    2SD1296

    Abstract: RL-4S
    Text: Product Specification www.jmnic.com 2SD1296 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain ・Low saturation voltage APPLICATIONS ・For audio frequency power amplifier and low speed high current switching industrial use


    Original     		PDF 2SD1296 VCC60V 2SD1296 RL-4S

    100MA 45 V NPN

    Abstract: to-3p 2SD1294 2SD129
    Text: Inchange Semiconductor Product Specification 2SD1294 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Wide area of safe operation ・High DC current gain ・Darlington APPLICATIONS ・Power regulator for line operated TV PINNING PIN DESCRIPTION


    Original     		PDF 2SD1294 100mA 100MA 45 V NPN to-3p 2SD1294 2SD129

    2SD1296

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SD1296 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain ・Low saturation voltage APPLICATIONS ・For audio frequency power amplifier and low speed high current switching


    Original     		PDF 2SD1296 VCC60V 2SD1296

    2SD1290

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SD1290 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・Wide area of safe operation APPLICATIONS ・For color TV horizontal deflection


    Original     		PDF 2SD1290 2SD1290

    2SB0968

    Abstract: 2SB968 2SD1295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) 2SB0968 2SB968) 2SD1295 2SB0968 2SB968 2SD1295

    2SB0968

    Abstract: 2SB968 2SD1295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) 2SB0968 2SB968) 2SD1295 2SB0968 2SB968 2SD1295

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 • Package ■ Features


    Original     		PDF 2002/95/EC) 2SB0968 2SB968) 2SD1295

    2SB0968

    Abstract: 2SD1295
    Text: Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.8 max. 2.5±0.1 • Possible to solder radiation fin directly to printed circuit board • Output of 4 W can be obtained by a complementary pair with 2SB0968 0.5±0.1 1.8±0.1 7.3±0.1


    Original     		PDF 2SD1295 2SB0968 2SB0968 2SD1295

    Untitled

    Abstract: No abstract text available
    Text: 2SD1296 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


    Original     		PDF 2SD1296

    2SD130

    Abstract: power transistor mrc 438 2SD180 2SD129 2SD130 BL mrc 438 2SD130BL 2SD18 A/power transistor mrc 438 2sd12
    Text: y 2Sd129 À SILICON NPN DIFFUSED JUNCTION TRANSISTOR 2 S d 13 0 O o U iiit Power Am plifier A p p l i c a t i o n s - in mrc 0 1 5 .7 MAX. ÂÜtflE t - - r : VC E 0 - 8ÖV I £12.5 MAX. * ! » 15 BE # ffiv,' : VC E s a t - 1 . 5 V (Max.) F P J 2 5 W ( T c - 25°C )


    OCR Scan     		PDF 2SD129 2SD130 2SD129 2SD18 2SD130 2SP129-R 2SD130-B 2SD12 power transistor mrc 438 2SD180 2SD130 BL mrc 438 2SD130BL A/power transistor mrc 438

    D1294

    Abstract: TOSHIBA TV IC regulator 2SD1294 AC73 1S1888 equivalent
    Text: TOSHIBA 2SD1294 2 S D 1 294 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm PO W ER REGULATOR FOR LINE OPERATED TV 15.9MAX. . 2.0 • / / , Excellent Wide Safe Operating Area 80 W-s at Tc = 25°C Included Avalanche Diode :V z = 6 0 ± 1 5 V


    OCR Scan     		PDF 2SD1294 1S1888 D1294 TOSHIBA TV IC regulator 2SD1294 AC73 1S1888 equivalent

    2SD1296

    Abstract: No abstract text available
    Text: 2SD 1296 2SD1296 I S I P N X fc° $ +• is ~j* V N PN Silicon Epitaxial Darlington Transistor $ ¥ — XJ > V > & m ) y IJ 3 V F 7 lx4'yT> 7m Audio Frequency Power Amplifier Low Speed High Curreut Switching Industrial Use i i f f l ^ » H / P A C K A G E D IM E N S IO N S


    OCR Scan     		PDF 2SD1296 2SD1296

    2SD1267

    Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
    Text: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290


    OCR Scan     		PDF 2SD1267 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1279 SC-62 2SD1280 2SD1267 2SD1267A 2SD1271 2SD1273 2SD1273A 2SD1274

    2SD1297

    Abstract: No abstract text available
    Text: 2SD1297 2SD1297 N P N n i f c d U>b =7>i>7.^ y - < j > h >mm NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier and Low Speed High Current Switching Industrial Use I i f f l 4 # * / FEATURES o r - 'J > h fl- l2]/P A C K A G E DIMENSIONS


    OCR Scan     		PDF 2SD1297 PWS300 PWS350 2SD1297

    Untitled

    Abstract: No abstract text available
    Text: 2SD1294 SILICON NPN TRIPLE DIFFUSED TYPE POWER REGULATOR FOR LINE OPERATED TV. Unit in mm 0 z.2 ±az FEATURES : / . E xcellent W i d e Safe Operating Area 80 W . s e c at Tc=25°C . Included A b a l a n c h e D iode : Vz=60il5V . High DC Current G a i n : hFjr=2000 — 20000


    OCR Scan     		PDF 2SD1294 60il5V CL0047AP

    2SD1292

    Abstract: No abstract text available
    Text: ROHM CO L T D ' - MQE D 7 f i 2 f l W O Q O S Ô 4 L 2 • RHM h 7 > y 7 s $ / T ransistors 2SD1292 7 -27-lJ 2SD1292 I fcf £ # v 7 fr y * ^ NPN v y =3 > h 7 > v X £ ^ Ib ^ iilS f f l/M e d iu r n Power Amp, Epitaxial Planar NPN Silicon Transistor • *WB>f&IS/'Dftn6f»sions Unit: mm


    OCR Scan     		PDF 2SD1292 -27-lJ 2SD1292

    KA 3264

    Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
    Text: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A


    OCR Scan     		PDF 2SC2979 2SC3508 2SC2555 2SC3322 2SD1457 2SC3306 2SC3509 2SD1706 2SD1707 KA 3264 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371

    2SD1292

    Abstract: transistors 2sd 2500
    Text: h ~Py V 7^$ /Transistors O C r i 4 O O O m w 2SD1292 yU=]> Epitaxil Planar NPN Silicon Transistor 4 l^ ^ J l i llliffl/M e d iu m Power Amp. m • v|-;£|23/Dim ensions Unit : mm 1) V CE O = 8 0 V t L ' „ 2) lc = 1 A £ * # v , \ , 3) FifeO V ~ T7 U x 1 t i ' & l ' , ,


    OCR Scan     		PDF 2SD1292 23/Dim 2SD1292 transistors 2sd 2500

    NTC2335

    Abstract: 2SA603 2SC2719 2SA1154 28c128 2SA1151 2sc2720 2SC2718 NTD565 2SA1152
    Text: Darlington Power Transistors ' ^ U c DC lA] Package \ Vceo M \ 60 TO-126 .80 TO-126 3.0 2.0 1.5 5.0 7.0 NTD985 NTB794 NTD986 NTB795 100 T0-220AB NTD560 NTB601 400 TO-220AB NTD987 NTD1162 (300V) 15 25 2SD1296 (MP-80) NTD412 (TO-3) 2SD1297 (MP-80) 10 NTD411


    OCR Scan     		PDF O-126 NTD985 NTB794 NTD986 NTB795 NTD411 O-220AB NTD560 NTB601 NTC2335 2SA603 2SC2719 2SA1154 28c128 2SA1151 2sc2720 2SC2718 NTD565 2SA1152