Untitled
Abstract: No abstract text available
Text: 2SK963 Switching Diodes MA2S111 Tentative Silicon epitaxial planer type Unit : mm 1.60±0.05 For switching circuits +0.05 1.20–0.03 0.30±0.05 (0.2) +0.05 0.80–0.03 • Features ● Small S-Mini type 2-pin package 1 ● High-density mounting possible
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2SK963
MA2S111
100mA
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MA156
Abstract: No abstract text available
Text: 2SK963 Switching Diodes MA156 Silicon epitaxial planer type Unit : mm For switching circuits 6.9±0.1 1.5 board 1.0 0.85 4.5±0.1 4.1±0.2 fixed in a self-standing pattern after insertion in the printed-circuit 2.4±0.2 2.0±0.2 3.5±0.1 M type package for automatic and manual insertion, which can be
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2SK963
MA156
SC-71
MA156
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ma156
Abstract: No abstract text available
Text: 2SK963 Switching Diodes MA156 Silicon epitaxial planer type Unit : mm For switching circuits 6.9±0.1 1.5 board 1.0 4.5±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo
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2SK963
MA156
ma156
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MA156
Abstract: 2SK963 SC-71
Text: 2SK963 Switching Diodes MA156 Silicon epitaxial planer type Unit : mm For switching circuits 6.9±0.1 1.5 1.0 4.5±0.1 0. 7 0.85 4.1±0.2 board ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in
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2SK963
MA156
MA156
2SK963
SC-71
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MA188
Abstract: No abstract text available
Text: 2SK963 Switching Diodes MA188 Silicon epitaxial planer type Unit : mm For high-speed high voltage resistance switch and small power current rectification f0.45 max. COLORED BAND INDICATES CATHODE • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol 2
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2SK963
MA188
DO-34)
200mA
MA188
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Untitled
Abstract: No abstract text available
Text: 2SK963 Power F-MOS FETs 2SK963 Silicon N-Channel Power F-MOS Unit : mm • Features secondary breakdown converter ● Non-contact ● Solenoid ● Motor 10.0 -0 ● DC-DC +0.3 ■ Applications 0.8±0.2 switching : t f = 45ns typ 7.2±0.3 ● High-speed ● No
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2SK963
300ms
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Untitled
Abstract: No abstract text available
Text: 2SK963 Switching Diodes MA133 Silicon epitaxial planer type 0.28±0.05 Extra-small SS-Mini type package with two incorporated elements, enabling high-density mounting Unit : mm 1 Series connection in package 3 2 Parameter Unit 80 VR +0.05 +0.05 Rating Symbol
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2SK963
MA133
100mA
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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2SK963
Abstract: 2SK9
Text: 2SK963 Power F-MOS FET 2SK963 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R us on : R ds (on) = 0 .4 5 i l (ty p .) • High sw itc h in g r a te : t f = 4 5 n s (ty p .) • No se c o n d a ry b reak d o w n
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2SK963
2SK9
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2SK963
Abstract: power 45ii 45II S240
Text: P o w er F-MOS FET 2SK963 2SK963 Silicon N-channel Power F-MOS FET Package Dim ensions • Features • L ow ON re s is ta n c e R DS on : R ds (on) = 0 .4 5 ii (ty p .) Unit: mm • H igh sw itc h in g r a te : t f= 4 5 n s (ty p .) 3.7m ax. 7.3max. • No se c o n d a ry b reak d o w n
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2SK963
3E052
GG1712D
2SK963
power 45ii
45II
S240
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2SK1001
Abstract: 2SK1002 2SK918 2SK990 2SK994 2SK1000 2SK962 2SK976 2SK987 2SK989
Text: - 78 - f m s tt £ m m m ^ * K 2SK962 £: ft V* V fe i* * (V) ft * (A) M S X P d /P c h ft * (W) (¿E? (A) Vg s (V) W s wiy (A) (min) (max) Vd s (V) (V) (V) sm (min) Vd s (S) {\ l f (V) 1d (A) SW-Reg, USP, DDC MOS N E 900 DSS ±30 S 8 D 2SK963 n r DDC, Motor-D
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2SK962
2SK963
2SK968
2SK970
2SK971
220nstyp
2SK992
230nstyp
2SK993
2SK1001
2SK1002
2SK918
2SK990
2SK994
2SK1000
2SK962
2SK976
2SK987
2SK989
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2SK2324
Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)
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2SK758
O-220F
2SK963
2SK1478
A2SK2122
O-220E
2SK1036
2SK766
2SK2324
TO-220E
2SK1609
2SK1614
2SK2129
220E
2SK1606
2SK1611
2sk2128
2SK2323
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2SK996
Abstract: No abstract text available
Text: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46
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2SK1868
O-220F
2SK1255
2SK1256
2SK1967
2SK1033
2SK1257
O-220E
2SK2578
2SK2579
2SK996
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8893 single chip tv processor
Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7
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MN171608/9
LN66A
MN12510
AN3813/14/15
AN3840N
PNA4601M
MN187*
MN6750*
AN3126/29
AN5179/82N
8893 single chip tv processor
transistor tt 2170 em
AN7156N
an8294nsb
Color TV circuit 8893
AN8782SB
mn150832
mip160
mn662741
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OF03
Abstract: 2SK1263 2SK2377
Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128
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A2SK2277
2SK2014
2SK2047
2SK1834
220Fro
2SK1980
A2SK2128
A2SK2125
2SK1833
2SK2509
OF03
2SK1263
2SK2377
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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2SK2324
Abstract: 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1036 2SK1331
Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) ton RoS(on) 1Y h I
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2SK758
O-220F
2SK963
2SK1478
A2SK2122
O-220E
2SK1036
2SK766
2SK2324
220E
2SK2129
2SK76
2sk203
2SK1606
2sk2128
2SK996
2SK1331
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2SK2277
Abstract: 2SK2580 220E4 2SK2015 2SK2014
Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128
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2SK2277
2SK2014
2SK2047
2SK2538
220Fz
2SK1834
220Fro
2SK1980
A2SK2128
220E-0
2SK2580
220E4
2SK2015
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2SK662
2SK1103
2SJ163
2SK198
2SK374
2SK123
2SK1216
2SK1842
2SJ164
2SK301
K614
K 1833
2SK 129 A
gn1015
2SK1257 equivalent
2SK1962
2sk 170 Pin
GN1021
IC STK411-220E CIRCUIT
K996
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