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    2SK614 Search Results

    2SK614 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK614 Panasonic TRANS MOSFET N-CH 80V 0.5A 3TO-92 Original PDF
    2SK614 Panasonic Silicon N-Channel MOS FET Original PDF
    2SK614 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK614 Panasonic N-Channel MOS FET Original PDF
    2SK614 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK614 Unknown FET Data Book Scan PDF
    2SK614 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK614 Panasonic Silicon MOS FETs Scan PDF

    2SK614 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL


    Original     		PDF 2SK0614 2SK614)

    2SK614

    Abstract: to-92 type
    Text: Silicon MOS FETs Small Signal 2SK614 Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 • Features 13.5±0.5 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL +0.2 Symbol +0.2 0.45 –0.1


    Original     		PDF 2SK614 500mA 2SK614 to-92 type

    Untitled

    Abstract: No abstract text available
    Text: 2SK614 Silicon MOS FETs Small Signal 2SK614 Silicon N-Channel MOS Unit : mm For switching 4.0±0.2 5.1±0.2 5.0±0.2 Low ON-resistance RDS(on) ● High-speed switching ● Direct drive possible with CMOS, TTL +0.2 +0.2 0.45 –0.1 0.45 –0.1 • Absolute Maximum Ratings (Ta = 25˚C)


    Original     		PDF 2SK614 SC-43 500mA

    2SK0614

    Abstract: 2SK614
    Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.1±0.2 For switching circuits 4.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original     		PDF 2SK0614 2SK614) 2SK0614 2SK614

    2SK0614

    Abstract: 2SK614
    Text: Silicon MOS FETs Small Signal 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 • Features 4.0±0.2 13.5±0.5 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ■ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK0614 2SK614) 2SK0614 2SK614

    2SK0614

    Abstract: 2SK614
    Text: Silicon MOS FETs Small Signal 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm • Features 5.0±0.2 0.7±0.2 5.1±0.2 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL 4.0±0.2 12.9±0.5


    Original     		PDF 2SK0614 2SK614) 2SK0614 2SK614

    SSSMini3-F1 transistor

    Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
    Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)


    Original     		PDF 2SK0601 2SK614) 2SK664) 2SK665) 2SK1228 2SK1374 2SK3539 2SK3546J 2SK3547 2SK2211 SSSMini3-F1 transistor 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614

    2SK0614

    Abstract: 2SK614
    Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL 0.7±0.2 • Features 13.5±0.5


    Original     		PDF 2SK0614 2SK614) 2SK0614 2SK614

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 0.7±0.1 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open) VGSO 20 V 0.5 A 1.0 A 750 mW 150


    Original     		PDF 2SK0614 2SK614)

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2sk to-92

    Abstract: No abstract text available
    Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80


    OCR Scan     		PDF 2SK601 2SK614 2SK615 2SK620 A2SK2276 A2SK2342 2sk to-92

    2SK582

    Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
    Text: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS


    OCR Scan     		PDF 2SK578 2SK579 2SK580 2SK581 2SK582 10mfti 2SK809 2SK604 25dBtyp 100MHz 2SK582 2SK600 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604

    2SK1216

    Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK1216 3SK139 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK374 3SK286

    2SK620

    Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK620 3SK268 3SK269 3SK286 CAMERA MOS 2SJ164

    2SK2276

    Abstract: 2sk227
    Text: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40


    OCR Scan     		PDF 2SK601 2SK614 2SK615 2SK620 2SK2276 2SK2277 2SK2342 2SK2474 2SK2495 A2SK2660 2SK2276 2sk227

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202