2SK3376MFV Search Results
2SK3376MFV Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| 2SK3376MFV |
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Silicon N Channel Junction Type For ECM | Original |
2SK3376MFV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SK3376MFVContextual Info: 2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature |
Original |
2SK3376MFV 2SK3376MFV | |
2SK3376MFVContextual Info: 2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature |
Original |
2SK3376MFV 2SK3376MFV | |
2SK3376MFVContextual Info: 2SK3376MFV 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3376MFV エレクトレットコンデンサマイクロフォン用 単位: mm 0.22±0.05 ・過渡応答性に優れる 1.2±0.05 0.8±0.05 0.32±0.05 ・0.5mm 厚薄型パッケージのため薄型マイクロフォンに最適 |
Original |
2SK3376MFV 2SK3376MFV | |
|
Contextual Info: 2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C |
Original |
2SK3376MFV | |
|
Contextual Info: 2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature |
Original |
2SK3376MFV |