2SK3077A Search Results
2SK3077A Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| 2SK3077A |
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2SK3077 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-2K1D, 4 PIN, FET RF Small Signal | Original | |||
| 2SK3077A |
|
High-frequency Junction FET | Original |
2SK3077A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 20.5dBmW • Gain: Gp ≥ 10.5dB • Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics |
Original |
2SK3077A | |
2SK3077AContextual Info: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 20.5dBmW · Gain: Gp ≥ 10.5dB · Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics |
Original |
2SK3077A 2SK3077A | |
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Contextual Info: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • • • Output power: Po > = 20.5dBmW Gain: Gp > = 10.5dB Drain Efficiency: ηD > = 50% Maximum Ratings Ta = 25°C Characteristics |
Original |
2SK3077A |