2SK2103 Search Results

mosfet

Abstract: parallel mosfet 2SK2103
Contextual Info: Transistors Small switching 30V, 2A 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel

2SK2103

Contextual Info: Transistors Small switching 30V, 2A 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel

2SK2103

Contextual Info: 2SK2103 Silicon N-channel MOSFET Features Dimensions Units : mm available in MPT3 (MPT, SOT89, SC-62) package 2SK2103 (MPT3) ♦0.2 4 .5 _ o . i low on-resistance 1 .6 * 0 1 Ö ïî wide SOA (Safe Operating Area) 1 m fast switching speed ! ! «vi ! i ! '

T101

Contextual Info: nourri POWER MOSFET S M Excellent switching capability with low on resistance, suitable for switching power supply or DC-DC converter. Taping prducts for use on an automatic mounting machine are also available. Quick reference n\ V dss V 30 60 2SK2103 (MPT)

2sk3065

Contextual Info: Transistors Small switching 30V, 2A 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel

2SK2103

Abstract: T100
Contextual Info: Transistors Small switching 30V, 2A 2SK2103 •F e a tu re s • E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 1 5±01 3) W ide SOA (safe operating area). r?iI 4) Low-voltage drive (4V). 5) Easily designed drive circuits.

Contextual Info: Transistors Small Switching 30V, 2A 2SK2103 • F e a tu re s • E x te rn a l d im ensio ns (U n its: mm) 1) Low o n -resistan ce. «•¿ft? 2 ) H igh-speed sw itch in g . 1 .6 ± 0 .1 1 .5 + 0 .1 I 1 - m 3 ) W ide SO A (safe operating a re a). 4 ) Low -voltage drive (4V ).

2SK2103

Contextual Info: 'y is 7. $ /Transistors h7 2SK2103 2SK2103 %J\s MOS h7 >v * £ Silicon N-channel MOSFET X -i >y3- > ^/Switching • 1 S / D im e n sio n s Unit : mm) 1 & * > 1 & }n .o 2) i S J I X - f -j 9 > tf- Ko 3) SO A 4) f i l E S E M 5) m u m 6) m a m (4 V B » )o

Contextual Info: Transistors Small switching 30V, 2A 2SK2103 •Fe atu re s 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. ►External dimensions (Units: mm)

2sk2103

Abstract: oc sc-62 mosfet
Contextual Info: Transistors Small switching 30V, 2A 2SK2103 •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. •External dimensions (Units: mm)

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

Contextual Info: Power MOSFET transistors Power MOSFET transistors Features • available in the following packages — MPT3 SC-62, US/European SOT-89 — CPT F5 (SC-63, TO-252 D-PAK) — PSD(D2-PAK) • can be driven at 4 V, that is directly from an 1C, saving inclusion of buffer transistors on

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

2SK2430

Abstract: 2SK2042 2SK2306 2SK2041 2SK2094 2SK2103 2SK2104 2SK2105 2SK2463
Contextual Info: R D N fn POWER MOSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

rkm 21 transistor

Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
Contextual Info: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts

top mark smd A12 5PIN

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A transistor npn c882 zener diode c531 FAIRCHILD AA32 smd diode zener DIODE D49 ALPHA&OMEGA DATE CODE U261 intel g31 motherboard CN17-4
Contextual Info: 5 3 2 1 First International Computer,Inc Portable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : DPUA 2. PCI & IRQ & DMA Description : Version : 0.3 3. Block Diagram : D C 4. Nat name Description :

2sk3808

Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
Contextual Info: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts

IMH10

Contextual Info: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209

2SK1973

Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
Contextual Info: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K

2SK series

Contextual Info: N CHANNEL MOSFETS 2SK SERIES • LOW ON RESISTANCE, HIGH SPEED SWITCHING AND A WIDE SAFE OPERATING AREA • IDEAL FOR MOTOR AND SOLENOID CONTROLS AND SWITCH MODE POWER SUPPLIES N CHANNEL POWER MOSFETS 2SK SERIES TA = 25˚C Absolute max ratings VDSS ID PD Part No

2SA1885

Abstract: T147
Contextual Info: Transistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to T0-220, Pc=35W transistors. EM3 • UMT • SMT Three types are available to allow the most suitable package depending on size specifications. Pc (mW)

BH7626KS2

Abstract: L200k audio signal switcher bh7626
Contextual Info: PRODUCTS Silicon monolithic IC TYPE PAGE B H 7626K S2 Structure Silicon Monolithic integrated circuit Product name I/O interface LSI for P A L -ty p e DVD recorder Type BH 7626KS2 Outer dimensions Figure-1 Pin assignment Figure-2 Block diagram Figure-3 1/18

2SK230

Abstract: 2SK2463
Contextual Info: •UNITI POWER MGSFET s M 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors