2SK1909 Search Results

2SK1909

Abstract: i0c0
Contextual Info: 2SK1909 2093 2090 LD L o w D rive S eries V DSS= 1 0 0 V N Channel Power MOSFET 4227 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1909-applied equipm ent.

2SK1909

Contextual Info: Ordering number: EN 4227 2SK1909 No.4227 N-Channel MOS Silicon FËT Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1909-applied equipment.

2SK1909

Contextual Info: Ordering number:EN4227 N-Channel Silicon MOSFET 2SK1909 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1909] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

2SK1909

Contextual Info: Ordering number : EN4227 SANYO Semiconductors DATA SHEET 2SK1909 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions unit:mm 2093A [2SK1909] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 11.0 20.9 1.2 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching.

Contextual Info: 2SK1909 2093 2090 LD L o w D rive S eries VDSs = 1 0 0 V N Channel Power M OSFET E 4227 F e a tu r e s • Low ON re sista n c e . • V ery h igh-speed sw itch in g . • L ow -voltage driv e. •S urface m o u n t type device m a k in g th e follow ing possible.

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2SK1925

Contextual Info: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

SANYO Replacement list

Abstract: 2SK1885 2sk3615 2SC6082 2SK3706 2SK2432 2SA2098 2sc6082 Replacement 2SK3747 2SC4108
Contextual Info: Ordering number : E I 0 0 6 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.

2SK2164

Abstract: 2SK1885 2SJ270 2SJ260 2sj261
Contextual Info: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2SK1901

Contextual Info: 11 LO Seríes Lineup V DSS = 100V, N-channel Absolute maximum ratings at Ta =25°C Type No. 2SK1849 Package V d ss VGSS V (V) CP 2SK1473 2SK1728 % ?o‘ (A) m 0.25 0.25 t Electrical characteristics atTa = 25°C ^G S (off) min to max (V) 2.0 ^D S (on) ^D S (on)

13FLP

Abstract: sj22 serie 2sk
Contextual Info: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。