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    2SK107 Search Results

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    2SK107 Price and Stock

    Renesas Electronics Corporation 2SK1070PIETL-E

    JFET N-CH 22V 50MA 3MPAK
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    Rochester Electronics 2SK1070PIETL-E 24,000 1
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    Renesas Electronics Corporation 2SK1070PICTL-E

    JFET N-CH 22V 50MA 3MPAK
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    Rochester Electronics 2SK1070PICTL-E 24,000 1
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    Renesas Electronics Corporation 2SK1070PIDTL-E

    JFET N-CH 22V 50MA 3MPAK
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    Renesas Electronics Corporation 2SK1070PIETR-E

    JFET N-CH 22V 50MA 3MPAK
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    Verical 2SK1070PIETR-E 12,000 292
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    Rochester Electronics 2SK1070PIETR-E 12,000 1
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    • 1000 $0.935
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    Renesas Electronics Corporation 2SK1070PIDTLE

    Trans JFET N-CH 50mA Si 3-Pin MPAK T/R
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    Verical 2SK1070PIDTLE 24,000 292
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    2SK107 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK107 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK107 Unknown FET Data Book Scan PDF
    2SK107 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK107 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK107 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK107 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK1070 Hitachi Semiconductor Silicon N-Channel Junction FET Original PDF
    2SK1070 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1070 Renesas Technology Silicon N-Channel Junction FET Low frequency/High frequency amplifier Original PDF
    2SK1070 Renesas Technology Silicon N-Channel Junction FET Original PDF
    2SK1070 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK1070 Unknown Scan PDF
    2SK1070 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1070 Unknown FET Data Book Scan PDF
    2SK1070B Hitachi Semiconductor Silicon N-Channel Junction FET Original PDF
    2SK1070B Renesas Technology Silicon N-Channel Junction FET Original PDF
    2SK1070C Hitachi Semiconductor Silicon N-Channel Junction FET Original PDF
    2SK1070C Renesas Technology Silicon N-Channel Junction FET Original PDF
    2SK1070D Hitachi Semiconductor Silicon N-Channel Junction FET Original PDF
    2SK1070D Renesas Technology Silicon N-Channel Junction FET Original PDF

    2SK107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1078

    Abstract: 1SS184 SSOP24 TD62M4503AFN
    Text: TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x 4 and Diodes (1SS184). FEATURES 4V Drive Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.)


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    PDF TD62M4503AFN TD62M4503AFN 2SK1078) 1SS184) 2SK1078 1SS184 SSOP24

    2sk129

    Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119


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    PDF 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131

    2SK1070

    Abstract: Hitachi DSA0076 2SK435
    Text: 2SK1070 Silicon N-Channel Junction FET ADE-208-1175 Z 1st. Edition Mar. 2001 Application Low frequency / High frequency amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Gate 2SK1070 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage


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    PDF 2SK1070 ADE-208-1175 2SK1070 Hitachi DSA0076 2SK435

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK1070 R07DS0282EJ0300 Previous: REJ03G0574-0200 Rev.3.00 Mar 28, 2011 Silicon N-Channel Junction FET Application • Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Drain


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    PDF 2SK1070 R07DS0282EJ0300 REJ03G0574-0200) PLSP0003ZB-A R07DS0282EJ0300

    Hitachi DSA002757

    Abstract: No abstract text available
    Text: 2SK1070 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline 2SK1070 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Gate to drain voltage VGDO –22 V Gate to source voltage VGSO –22 V Drain current


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    PDF 2SK1070 30stics Hitachi DSA002757

    2SK1070PIDTL

    Abstract: 2SK1070PIDTL-E 2SK1070 2SK1070PIETL-E SC-59A PLSP0003ZB-A
    Text: 2SK1070 Silicon N-Channel Junction FET REJ03G0574-0200 Previous ADE-208-1175 (Z Rev.2.00 Mar.14.2005 Application • Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Drain 2. Source 3. Gate


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    PDF 2SK1070 REJ03G0574-0200 ADE-208-1175 PLSP0003ZB-A Gate-900 Unit2607 2SK1070PIDTL 2SK1070PIDTL-E 2SK1070 2SK1070PIETL-E SC-59A PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: 2SK1074 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)120 Minimum Operating Temp (øC)


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    PDF 2SK1074

    2SK1078

    Abstract: 1SS184 SSOP24 TD62M4503AFN
    Text: TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x 4 and Diodes (1SS184). FEATURES l 4V Drive l Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.)


    Original
    PDF TD62M4503AFN TD62M4503AFN 2SK1078) 1SS184) 2SK1078 1SS184 SSOP24

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK1070 R07DS0282EJ0400 Rev.4.00 Jan 10, 2014 Silicon N-Channel Junction FET Application • Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A Package name: MPAK 3 1 2 1. Drain 2. Source 3. Gate Absolute Maximum Ratings


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    PDF 2SK1070 R07DS0282EJ0400 PLSP0003ZB-A R07DS0282EJ0400

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


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    PDF 2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI-CHIP TD62 M 4 5 0 3 A F N POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x4 and Diodes (1 SSI 84). FEATURES • 4V Drive


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    PDF TD62M4503AFN TD62M4503AFN 2SK1078 100AA 100mA SSOP24-P-300-0

    2SK1079

    Abstract: No abstract text available
    Text: 2SK1079 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7T-MOSm HIGH SPEED S WITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, M OTOR DRIVE AND DC-DC CONVERTER APPLICATIONS Unit in mm 1.6 MAX. 4.6 MAX. FEATURES: • 4-Volt Gate Drive • Low Drain-Source ON Resistance


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    PDF 2SK1079 100iJA 17QC1 2SK1079

    2SK1070

    Abstract: 2SK435
    Text: HITACHI 2SK1070-SILICON N-CHANNEL JUNCTION FET l o w f r e q u e n c y /hTg h f r e q u e n c y AMPLIFIER O 3cn l/i i ?i i 1 j Ì tí i 055 1Oi&i «ài h zkí S H u <N • 1 — C A I. Dro.ri •f. <> « .V C.nr r*> »*niml - r ° L C j o i


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    PDF 2SK1070-- 2SK1070 -15V\VOS SK1070 2SK435. 2SK435

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI-CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x4 and Diodes (1 SSI 84). FEATURES • 4V Drive • Low ON Resistance : Rn<; ( n h i\ = 0 .5 8 0 (Typ.)


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    PDF TD62M4503AFN TD62M4503AFN 2SK1078 100mA SSOP24-P-300-0 325TYP

    marking Z4

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1079 Field Effect Transistor Silicon N Channel MOS Type L2-rc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • R d S (O N ) = 0.95i2 (Typ.)


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    PDF 2SK1079 marking Z4

    2SK1078

    Abstract: 2SK107
    Text: TOSHIBA Discrete Semiconductors 2SK1078 Field Effect Transistor Silicon N Channel MOSType L2-7t-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance - R iDS(ON) = 0.4Í2 (Typ.)


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    PDF 2SK1078 10OpA 20ki2) 250mm2X( 2SK107

    2SK1073

    Abstract: lm815 2SK1074 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1084 2SK1100
    Text: m s tí: % m & m iS H f V j Hi A K V * * 2S K 1 0 6 9 H # LF A J N D -4 0 G D S BÍL LF/HF A J N D -2 2 G D O 2SK1074 S M 2SK1078 2SK1079 të S P d/Pc h 2SK1070 2SK1073 £ 1 9} * (V) - 22 0 & (A) * (W) I gss (max) (A) Vg s (V) (min) (A) % (max) V d s (A)


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    PDF 2sk1069 2sk1070 2sk1073 2SK1074 2sk1078 130nstyp 2SK1096 120nstyp VDD-30V 2SK1097 2SK1073 lm815 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1084 2SK1100

    2SK1078

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1078 Field Effect Transistor industrial Applications Unit in mm Silicon N Channel MOS Type L2-tt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


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    PDF 2SK1078 2SK1078

    Untitled

    Abstract: No abstract text available
    Text: 2SK1070 Silicon N-Channel Junction FET HITACHI Application Low frequency / High frequency amplifier Outline MPAK 4? ^ 2 1. Drain 2 ' S o u rc e 3. Gate 1064 2SK1070 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Gate to drain voltage VGD0 -2 2 Unit


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    PDF 2SK1070 2SK1070 2SK435.

    2SK1078

    Abstract: VSOP24 M4503 TD62 TD62M4503AFN
    Text: TOSHIBA TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI-CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x4 and Diodes (1SS184). FEATURES • 4V Drive • Low ON Resistance : Rd S(ON) =0.580 (Typ.)


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    PDF TD62M4503AFN M4503 TD62M4503AFN 2SK1078 SSOP24-P-300-0 2SK1078 100mA VSOP24 TD62

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1078 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ' Rds (on ) = 0.4£i (Typ.)


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    PDF 2SK1078

    VSOP24

    Abstract: No abstract text available
    Text: MULTI CHIP TD62M4503AFN BIPO LAR DIGITAL INTEGRATED CIRCUIT POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Pow er M O S FET 2SK1078 x4 and Diodes (1 SS 184). FEATURES • 4V Drive • Low ON Resistance : R d S (O N ) =0-580 (Typ.)


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    PDF TD62M4503AFN TD62M4503AFN 2SK1078 100mA VSOP24

    2SK1078

    Abstract: 2SK107
    Text: FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1078 INDUSTRIAL APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS Unit in mm 1.6.MAX. 4-6MAX. 1.7 MAX. FEATURES : • 4-Volt Gate Drive


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    PDF 2SK1078 100yA 10/Js 2SK1078 2SK107

    2SK1079

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 079 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. INDUSTRIAL APPLICATIONS _ Unit in mm 1.6MAX.


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    PDF 2SK1079 2SK1079