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    2SJ27 Search Results

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    2SJ27 Price and Stock

    TE Connectivity ROX2SJ27K

    RES 27K OHM 5% 2W AXIAL
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    DigiKey ROX2SJ27K Cut Tape 21,320 1
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    TE Connectivity ROX2SJ270K

    RES 270K OHM 5% 2W AXIAL
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    DigiKey ROX2SJ270K Cut Tape 14,487 1
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    TE Connectivity ROX2SJ270R

    RES 270 OHM 5% 2W AXIAL
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    DigiKey ROX2SJ270R Cut Tape 8,123 1
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    ROX2SJ270R Ammo Pack 8,000 1,000
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    Avnet Americas ROX2SJ270R Bulk 15 Weeks, 1 Days 12,000
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    Panasonic Electronic Components ERG-2SJ270A

    RES 27 OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ270A Reel 3,000 3,000
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    Rochester Electronics LLC 2SJ277-DL-E

    PCH 4V DRIVE SERIES
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    DigiKey 2SJ277-DL-E Bulk 2,000 174
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    2SJ27 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ270 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ271 Sanyo Semiconductor Original PDF
    2SJ271 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ272 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ272 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SJ272 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SJ273 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ273 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SJ273 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SJ274 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ274 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SJ274 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SJ275 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ275 Unknown P-Channel Power MOSFET Scan PDF
    2SJ275 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SJ275 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ275FD Unknown P-Channel Power MOSFET Scan PDF
    2SJ276 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ276 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ276 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF

    2SJ27 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SJ279

    Abstract: 2SJ279-S 2SJ279S Hitachi DSA001651
    Text: 2SJ279 L , 2SJ279(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		2SJ279 2SJ279-S 2SJ279S Hitachi DSA001651 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ278 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC


    OCR Scan     		2SJ278 PDF

    sanyo wx series

    Abstract: sanyo wx 2SJ277
    Text: 2SJ277 2093 2090 LD L o w D rive Series V Ds s = 1 0 0 V P Channel Power MOSFET 4241 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ277-applied equipment.


    OCR Scan     		2SJ277 2SJ277-applied 10/ws, c-10V sanyo wx series sanyo wx 2SJ277 PDF

    2SJ271

    Abstract: SC46 T0220AB
    Text: KNo. N *5 4 5 3 San yo =mm#mxxm 2SJ271 ÍÉ ÍÍ unit V DSS V gss Id I dp PW= lOus, duty cycle S 1% Tc = 25°C PD Tch Tstg rn rn m n m ags ‘M M &M Tmmm i t ' f * - K ii«J± x-f A Sü Æ iaK V V A A W °C °C -1 0 0 ±15 -1 5 -60 70 150 - 5 5 - + 150 min


    OCR Scan     		2SJ271 -100V 2052C T0220AB T370-05 13196YK! 2SJ271 SC46 PDF

    2SJ272

    Abstract: ITR00288 ITR00289 ITR00290 ITR00291
    Text: 注文コード No.N 4 2 3 8 2SJ272 No. 4 2 3 8 61599 新 2SJ272 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。


    Original     		2SJ272 --10V --50V ITR00294 ITR00295 ITR00296 ITR00297 2SJ272 ITR00288 ITR00289 ITR00290 ITR00291 PDF

    2SJ278

    Abstract: Hitachi DSA00389
    Text: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		2SJ278 2SJ278 Hitachi DSA00389 PDF

    2SJ272

    Abstract: No abstract text available
    Text: Ordering number:EN4238 P-Channel Silicon MOSFET 2SJ272 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ272]


    Original     		EN4238 2SJ272 2SJ272] O-220ML 2SJ272 PDF

    ITR00308

    Abstract: 2SJ274 ITR00309 ITR00310 ITR00311
    Text: 注文コード No.N 4 2 3 9 2SJ274 No. 4 2 3 9 52099 新 2SJ274 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。


    Original     		2SJ274 --10V --50V ITR00315 ITR00314 ITR00316 ITR00317 ITR00308 2SJ274 ITR00309 ITR00310 ITR00311 PDF

    2SJ276

    Abstract: No abstract text available
    Text: Ordering number: EN4749 _ 2SJ276 No.4749 P-Channel MOS Silicon FET Very High-Speed Sw itching Applications F e a tu r e s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. ■Surface m ount type device m aking the following possible.


    OCR Scan     		EN4749 2SJ276 2SJ276-applied 10//s, PDF

    2SJ277

    Abstract: No abstract text available
    Text: Ordering num ber:EN 4241 2SJ277 No.4241 P-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface mount type device making the following possible.


    OCR Scan     		EN4241 2SJ277 2SJ277-applied PDF

    2SJ275

    Abstract: No abstract text available
    Text: Ordering number:EN4240 2SJ275 No.4240 P-C hannel MOS Silicon FET SANTO Very High-Speed Switching Applications j F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.


    OCR Scan     		EN4240 2SJ275 2SJ275-applied PDF

    2SJ275

    Abstract: BU100
    Text: 2SJ275 2093 2090 LD L o w D rive S eries VDs s = 1 0 0 V P Channel Power MOSFET 4240 F e a tu re s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. ■Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ275-applied equipm ent.


    OCR Scan     		2SJ275 2SJ275-applied 10/iS, 10/JS 2SJ275 BU100 PDF

    2SJ275

    Abstract: No abstract text available
    Text: Ordering number:EN4240 P-Channel Silicon MOSFET 2SJ275 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ275] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original     		EN4240 2SJ275 2SJ275] 2SJ275-applied 2SJ275 PDF

    ITR00341

    Abstract: ITR00342 2SJ277 ITR00338 ITR00339 ITR00340 2090a
    Text: 注文コード No.N 4 2 4 1 2SJ277 No. 4 2 4 1 三洋半導体ニューズ 61499 新 2SJ277 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		2SJ277 ITR00343 --50V --10V ITR00342 IT00345 IT00346 IT00347 ITR00341 ITR00342 2SJ277 ITR00338 ITR00339 ITR00340 2090a PDF

    J279

    Abstract: 2SJ279L Hitachi 2SJ 2SJ279S
    Text: 2SJ279C , 2SJ279 Silicon P Channel MOS FET Application DPAK-1 High speed power switching 4 i Features • • • • Low on-resistance H igh speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC


    OCR Scan     		2SJ279C 2SJ279® 2SJ279 2SJ279 J279 2SJ279L Hitachi 2SJ 2SJ279S PDF

    2SJ274

    Abstract: No abstract text available
    Text: Ordering number:EN4239 P-Channel Silicon MOSFET 2SJ274 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ274]


    Original     		EN4239 2SJ274 2SJ274] O-220ML 2SJ274 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ278 Silicon P-Channel MOS FET H ITA C H I November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


    OCR Scan     		2SJ278 PDF

    2SJ278

    Abstract: Hitachi 2SJ DSA003638
    Text: 2SJ278 Silicon P-Channel MOS FET ADE-208-1190 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		2SJ278 ADE-208-1190 2SJ278 Hitachi 2SJ DSA003638 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ279 L , 2SJ279(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


    OCR Scan     		2SJ279 2SJ279Ã PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		2SJ278 Hitachi 2SJ Hitachi DSA002779 PDF

    2SJ274

    Abstract: No abstract text available
    Text: Ordering number: EN4239 2SJ274 No.4239 SAÊÊYO P-Channel MOS Silicon FET i Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating m ounting. b s o lu te M a x im u m R a tin g s a tT a = 2 5 °C


    OCR Scan     		EN4239 2SJ274 PDF

    EN4749

    Abstract: 2SJ276
    Text: Ordering number:EN4749 P-Channel Silicon MOSFET 2SJ276 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SJ276] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications


    Original     		EN4749 2SJ276 2SJ276] 2SJ276applied 2SJ276-applied EN4749 2SJ276 PDF

    2SJ271

    Abstract: No abstract text available
    Text: 2SJ271 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		2SJ271 --100V --50V --10V --15A 990929TM2fXHD 2SJ271 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ275 2093 LD L o w D rive S eries 2090 V DSs = 1 0 0 V P Channel Power M OSFET '£4240 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ275-applied equipm ent.


    OCR Scan     		2SJ275 2SJ275-applied PDF