2SD968 Search Results

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C

2SB789A

Abstract: 2SB789 2SD968 2SD968A marking symbol ER transistor IC 4020
Contextual Info: Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm Parameter Symbol Collector to 2SB789 base voltage 2SB789A Collector to 2SB789 Ratings –100 VCBO –120 –100

Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A IC

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A IC 2003
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) 1.6±0.2 1 3 2 0.5±0.08 0.4±0.08

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm Parameter Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A
Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A IC

WQ marking

Abstract: 2SD968 2SD968A
Contextual Info: Transistors SMD Type Silicon NPN epitaxial planer type 2SD968, 2SD968A Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 3 2 0.5±0.08 0.4±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te on na tin nc

2SB789

Abstract: 2SB789A 2SD968 2SD968A
Contextual Info: Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A Unit: mm 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter Collector to 2SD968 base voltage 2SD968A Collector to

2SB789A

Abstract: 2SB0789A 2SD0968A 2SD968A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 3˚ 1 0.4±0.08 0.4±0.04 4.0+0.25 –0.20 • Absolute Maximum Ratings Ta = 25°C

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A
Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C 0.4 max. 3˚ 2.6±0.1 • High collector-emitter voltage (Base open) VCEO

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm • Absolute Maximum Ratings Parameter 2SD0968 base voltage 2SD0968A Collector to

2sd0968

Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 Collector to base voltage 2SD0968A Collector to

Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm Parameter Collector to base voltage 2SD0968A Collector to 2SD0968 100

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) M Di ain sc te on na tin nc ue e/ d Unit: mm 4.5±0.1 Parameter Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.5±0.1 4.0+0.25 –0.20 M Di ain sc te on na tin nc ue e/ d 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A
Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C 0.4 max. 3˚ 2.6±0.1 • High collector-emitter voltage (Base open) VCEO

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD977

Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
Contextual Info: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K

NEC k 3654

Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6

616A TRANSISTOR

Abstract: 2sD586A 2SD736A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)