2SD2276 Search Results

2SB1503

Abstract: 2SD2276
Contextual Info: SavantIC Semiconductor Product Specification 2SB1503 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification

2SD2232

Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Contextual Info: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281

2SD2276

Abstract: 2SB1503
Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1503 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140 V Emitter to base voltage

2SB1503

Abstract: 2SD2276 2sb15
Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1503 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 160 V Collector to emitter voltage

2SB1503

Abstract: 2SD2276 darlington power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS

Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 1.0±0.2 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −140 V Emitter-base voltage (Collector open)

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2276 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −140 V Emitter to base voltage

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –160

Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2276 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −140 V Emitter to base voltage

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current

Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open) VCEO 140 V Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 1.5 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 160 V Collector-emitter voltage (Base open) VCEO 140

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open)

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 2.0 (1.5) 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 • Absolute Maximum Ratings TC = 25°C 5.45±0.3 Parameter Symbol Rating Unit

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3

2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and