2SD2150 Search Results

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris ­

Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

Contextual Info: h ~7 > V 7 . $ /Transistors 2 S 2 D 1 5 2SD2150 1 * S yT J t f l s - i - B NPN y V 3 > Nÿ >y Epitaxial Planar NPN Silicon Transistor 1ì£^ J&^^iSi|Ìffl/Low Freq. Power Amp. 5 T -7 fi\r/D im e n s io n s Unit : mm) 1 ) VcE(sat) V c E (s a t)= 0 .5 V (M ax.)

6551

Abstract: 9848 2SD2150 300-24
Contextual Info: SPICE PARAMETER 2SD2150 by ROHM TR Div. * 2SD2150 NPN BJT model * Date: 2006/12/14 .MODEL 2SD2150 NPN + IS=500.00E-15 + BF=300.24 + VAF=23.700 + IKF=13.956 + ISE=500.00E-15 + NE=1.6551 + BR=105.07 + VAR=100 + IKR=.75363 + ISC=1.9215E-9 + NC=2.1772 + NK=.97444

Contextual Info: 2SD2150Q Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage V VEBO 6 Collector Current - DC

2SB1424

Abstract: 2SD2150 T100
Contextual Info: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1

smd transistor marking cf

Abstract: CF marking transistor smd cf smd marking CF 2SD2150 SOT-89 smd marking CF
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SD2150 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 NPN silicon transistor. +0.1 0.80-0.1 Excellent DC current gain characteristics.

2SD2150

Contextual Info: 2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6

Contextual Info: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)

sit transistor

Abstract: transistor Ic 1A datasheet transistor sit 20V3A 2SD2150 2SA1585S 2SB1424 2SC4115S A-74
Contextual Info: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)

E50U

Abstract: c2a marking 2SD2150 sot89 "NPN TRANSISTOR" marking C2A
Contextual Info: 2SD2150 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 Features 4.4~4.6 1 1.4~1.8 2 1.4~1.6 3 3.94~4.25 1.BASE 2.COLLECTOR 2.3~2.6 * Excellent Current-to-Gain Characteristics

Contextual Info: 2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6

2SB1424

Abstract: 2SD2150 T100
Contextual Info: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) ̈́IC / IB = 2A / 0.1Aͅ 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1

245 transistor

Abstract: ic 245 2SD2150 transistor Ic 1A datasheet NPN 2SA1585S 20V3A 2SC4115 equivalent transistor an 243 npn 2a NPN Silicon Epitaxial Planar Transistor
Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

2SB1424

Abstract: 2SD2150 T100
Contextual Info: Low Frequency Transistor 20V, 3A 2SD2150 zDimensions(Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1 4.5+0.2 −0.1 4.0±0.3 2.5+0.2

Contextual Info: Transistors IC SMD Type Product specification 2SD2150 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 NPN silicon transistor. +0.1 0.80-0.1 Excellent DC current gain characteristics.

2SD2150

Abstract: transistor marking 2a marking CFR
Contextual Info: 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE SAT =0.5V(Max.) for IC / IB=2A/0.1A

SOT-89

Abstract: 2SD2150 marking CFR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range

sc-62 package

Abstract: SOT-89 transistor marking LM 2SD2150
Contextual Info: 2SD2150 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD2150; C F*, where ★ is hFE code • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.5 V (max) for

sot-89 PF

Contextual Info: 2SD2150 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features — 4.6 4.4 1.8 1.4 1.6 1.4 Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A — B 2.6 4.25 2.4 3.75 0.8 MIN

Contextual Info: Low Frequency Transistor 20V, 3A 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zDimensions(Unit : mm) 2SD2150 0.5±0.1 4.5+0.2 −0.1 4.0±0.3 2.5+0.2

2SD2150

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 2SD2150 TRANSISTOR Plastic-Encapsulate Transistors SOT-89 NPN FEATURES z Excellent current-to-gain characteristics z Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A

Contextual Info: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics