Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features
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2002/95/EC)
2SB1321A
2SD1992A
60nteed
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2SB1321A
Abstract: 2SD1992A
Text: Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 0.15 ● Allowing supply with the radial taping. Large collector power dissipation PC. 600mW 1.0 ●
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2SB1321A
2SD1992A
600mW)
2SB1321A
2SD1992A
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2SB1321A
Abstract: 2SD1992A
Text: Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SD1992A 0.85 14.5±0.5 0.65 max. • Large collector power dissipation PC (600 mW)
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2SB1321A
2SD1992A
2SB1321A
2SD1992A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features
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2002/95/EC)
2SB1321A
2SD1992A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD1992A
2SB1321A
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2SB1321A
Abstract: 2SD1992A 2sb1321
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in
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2002/95/EC)
2SB1321A
2SD1992A
2SB1321A
2SD1992A
2sb1321
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2SB1321A
Abstract: 2SD1992A
Text: Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max. 14.5±0.5 (0.85) • Allowing supply with the radial taping
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2SB1321A
2SD1992A
2SB1321A
2SD1992A
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2SB1321A
Abstract: 2SD1992A DSA003720 DSA00372081
Text: Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SB1321A 0.85 14.5±0.5 0.65 max. • Low collector to emitter saturation voltage VCE(sat)
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2SD1992A
2SB1321A
2SB1321A
2SD1992A
DSA003720
DSA00372081
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD1992A
2SB1321A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features
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2002/95/EC)
2SB1321A
2SD1992A
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2SB1321A
Abstract: 2SD1992A
Text: Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SD1992A 0.85 14.5±0.5 0.65 max. • Large collector power dissipation PC (600 mW)
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2SB1321A
2SD1992A
2SB1321A
2SD1992A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD1992A
2SB1321A
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2SB1321A
Abstract: 2SD1992A
Text: Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SB1321A 0.85 14.5±0.5 0.65 max. • Low collector to emitter saturation voltage VCE(sat)
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2SD1992A
2SB1321A
2SB1321A
2SD1992A
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2SB1321A
Abstract: 2SD1992A
Text: Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
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2SD1992A
2SB1321A
2SB1321A
2SD1992A
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2SB1321A
Abstract: 2SD1992A
Text: Transistor 2SD1992A Silicon NPN epitaxial planer type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 0.15 ● Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping. 1.0 ● 0.8 • Features
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2SD1992A
2SB1321A
2SB1321A
2SD1992A
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2SD1992
Abstract: 2SB1321 2SB1321A 2SD1992A
Text: Panasonic 2SB1321, 2SB1321A P N P ifc 'î'= if'> y ;u 7 ’i x - ^ - » 2SD1992, 2SD1992A ¿ =1 >7°'J ^ • # M • 2SD1992, 2SD1992A fc’n y~?' * > 9 ' ) - ^ T , • 7 ' J 7 Ì V - T — tf > ÿ'MiïSffîüfMo • 3 1 - M Í 1 * C0iâÂ?* S 600mW) ■
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OCR Scan
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2SB1321,
2SB1321A
2SD1992,
2SD1992A
600mW)
2SB1321
2SD1992
2SB1321A
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2SD2037
Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A
Text: - 276 - 13=25*0, *Ep[àTc=25Tï M 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD1996 2SD1997 2SD1998 2SD1999 2SD2000 2SD2001 2SD2Q12 2SD2014 2SD20Î5 2SD2016 2SD2017 2SD2018 2SD2019 2SD2022 2SD2023 2SD2024 2SD2025 2SD2027 2SD2028
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2SD1988
2SD1989
2SD1990
2SD1991A
2SD1992A
2SD1993
2SD1994A
2SD1995
2SD2017
2SD2018
2SD2037
2SD2001
2sd2033
2SD1991A
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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NEC 2SD1564
Abstract: 2SC3296 2sd2394 2012 NEC 2SD1993 2sd1780 2SD1995 2SD1991R 2SC4488 2SD1558
Text: - 256 - M £ Type No. M % a Manuf. SANYO 2 TOSHIBA NEC 2SD 1986 □ —A 2SD1190 2SD686 2SD1564 2SD 1987 □—A 2SD1825 2SD1414 2SD1595 2SD 1988 □ —A ÍZ. HITACHI 2SD1558 * ± FU JITSU fé T MATSUSHITA □ —A T 2SD 1991 r fé T 2SD1991A 2SD 1992 y
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2SD1986
2SD1987
2SD1988
2SD1989
2SD1990
2SD1991
2SD1992
2SD1993
2SD1994
2SD1995
NEC 2SD1564
2SC3296
2sd2394
2012 NEC
2sd1780
2SD1991R
2SC4488
2SD1558
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