2SD1820A Search Results

2SB1219A

Abstract: 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planar type 0.425 Unit: mm For general amplification Complementary to 2SB1219 and 2SB1219A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Low collector to emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Features  Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planar type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5°

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-mini type package, allowing downsizing of the equipment and

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm • Features Collector to 2SD1820 30 VCBO 25 VEBO 5 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat)

2sa1219

Abstract: 2SB1219 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planar type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-Mini type package, allowing downsizing of the equipment

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1820 and 2SD1820A Unit: mm • Features 1.25±0.1 0.425 0.3–0 +0.1 Ta=25˚C 0.65 1.3±0.1 ■ Absolute Maximum Ratings 0.425 1 0.65 ● 2.1±0.1

2SB1219A

Abstract: 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

IC DATE CODE

Abstract: IC marking TY
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Features  Package  Large collector current IC  S-Mini type package, allowing downsizing of the equipment and automatic

2SB1219A

Abstract: 2SD1820A
Contextual Info: Transistors 2SD1820A Silicon NPN epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SB1219A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Features 0.9±0.1 3 1 2 0.2±0.1 • Low collector to emitter saturation voltage VCE(sat)

Contextual Info: Transistors IC SMD Type Product specification 2SD1820A Features Low collector-emitter saturation voltage VCE sat . 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

2SB1219A

Abstract: 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Package  Large collector current IC  S-Mini type package, allowing downsizing of the equipment and automatic

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-mini type package, allowing downsizing of the equipment and

2SB1219A

Abstract: 2SD1820A
Contextual Info: Transistors 2SD1820A Silicon NPN epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SB1219A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Features 0.9±0.1 3 1 2 0.2±0.1 • Low collector to emitter saturation voltage VCE(sat)

hFE CLASSIFICATION Marking 24

Abstract: 2SB1219 2SB1219A 2SD1820 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planar type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 M

2SD1820

Abstract: 2SB1219 2SB1219A 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat)

2SD1820A

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1820A Features Low collector-emitter saturation voltage VCE sat . 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A +0.1 0.3Ð0.0 • Features Low collector to emitter saturation voltage VCE sat . S-Mini type package, allowing downsizing of the equipment and

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A 0.425 Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and