2SD1766 Search Results

TRANSISTOR BI 237

Abstract: NPN/TRANSISTOR BI 237
Contextual Info: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for

Contextual Info: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)

2SD1862

Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3

2SD1758

Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3

Contextual Info: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor

SMD TRANSISTOR MARKING 2A

Abstract: 2SD1766
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1766 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 Low VCE sat , VCE(sat) = 0.5V (typical) +0.1 0.80-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1

2SD1766

Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1

Contextual Info: 2SD1766 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features — — 2.6 4.25 2.4 3.75 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

736 33

Abstract: 8069 2SD1766
Contextual Info: SPICE PARAMETER 2SD1766 by ROHM TR Div. * 2SD1766 NPN BJT model * Date: 2006/12/04 .MODEL 2SD1766 NPN + IS=600.00E-15 + BF=185.52 + VAF=33.033 + IKF=10 + ISE=600.00E-15 + NE=1.8069 + BR=73.093 + VAR=100 + IKR=75.250E-3 + ISC=3.4894E-12 + NC=1.2296 + NK=.43296

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR PNP SOT-89-3L FEATURES 1. BASE 2. COLLECTOR 1 z Low VCE(sat). z Complements the 2SD1766 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

PNP 200V 2A SOT89

Abstract: cj sot 89
Contextual Info: 2SB1188 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP FEATURES z Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) z Complements the 2SD1766 z Weight: 0.05 g z RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H"

2SD1766

Contextual Info: 2SB1188 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER 3 B 2.6 4.25 2.4 3.75 Features 0.8 MIN — Low VCE(sat). — 0.44 0.37 Complements the 2SD1766 Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage

2SB1182

Abstract: 2SB1240 2SB1188 2SD1758 2SD1766 2SD1862 T100 302 ROHM
Contextual Info: Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 Dimensions (Unit : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.9 2.3±0.2 3.0±0.2 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 0.65±0.1 0.75 2.3+0.2 −0.1

2SD1766

Contextual Info: / T ransistors 2SD1766 2SD1766 X t ° ^ '> 7 ; U 7 V - ^ N P N Epitaxial Planar NPN Silicon Transistor 4 ,^ ^ * l lliffl/M edium Power Amp. • W f^ iS E I/D im e n s io n s Unit : mm Pc = 2 W T * 5 ( 4 0 X 1) 5y 0 40X0.7mm '•s-;:1 2) VcE(sat) VCE(sat)=0.16V (Typ.)

Contextual Info: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC /IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)

2SD1189F

Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1

Contextual Info: Transistors SMD Type Product specification 2SD1766 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 Low VCE sat , VCE(sat) = 0.5V (typical) +0.1 0.80-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1

2SB1188

Abstract: 2SD1766 marking 82 sot marking 02A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1766 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) z Complements to 2SB1188 2. COLLECTOR 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1766 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) z Complements to 2SB1188 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD1189F

Abstract: 2SB1240 LL1000 g 2SD1758 2SD1766 2SD1862 2SD1919 2SD1055 2SD1227M 2SB911M
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2 S D 1 7 6 6 /2 S D 1 7 5 8 /2 S D 1 8 6 2 /2 S D 1 1 8 9 F / 2 S D 1 0 5 5 /2 S D 1 9 1 9 /2 S D 1 2 2 7 M •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). VcE(sat) = 0.16V (Typ.) 2SD1766

npn 200V 0.2A SOT89

Contextual Info: WILLAS FM120-M+ 2SD1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR NPN process design, excellent power dissipation offers

2SD1766

Contextual Info: 2SD1766 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1766; DB-*, where ★ is hFg code • • • 2SD1766 (MPT3) +0 2 4 5 —0.1 1 .6 * 0 1 m Ö 1 %2 ¿L. R : H I 1 P q = 2 W, when mounted on 40 x 40 x

2SD1766

Contextual Info: 2SD1766 2SD1766 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 2 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1766 Features • • • 2.0Amp Medium Power Transistor 32 Volts Low VCE sat : VCE(sat) =0.5V(Typ.)(IC/IB=2.0A/0.2A) Complements the 2SB1188