2SD1499 Search Results

Contextual Info: Power Transistors 2SD1499 2SD1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m p lifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U nit I mm 4 .4 m a x . 1 0 .2m ax. 5 .7 m a x . ■ Features 2.9max • V e r y g o o d lin e a rity o f D C c u r r e n t gain h HE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Symbol Rating Unit

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 5.5±0.2 2.7±0.2 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −100 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1063

Abstract: 2SD1499
Contextual Info: SavantIC Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −100 V Collector-emitter voltage (Base open) VCEO −100 V Emitter-base voltage (Collector open)

2SB1063

Abstract: 2SD1499
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 APPLICATIONS

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 100 V Collector-emitter voltage (Base open)

Contextual Info: 2SD1499 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)3

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

2SD1499

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1499 TRANSISTOR NPN TO-220F FEATURES z Extremely satisfactory linearity of the forward current transfer ratio hFE z Wide safe operation area z High transition frequency fT

2SB1063

Abstract: 2SD1499
Contextual Info: JMnic Product Specification 2SB1063 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1499 ・Wide area of safe operation ・High fT APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: 2SD1499 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Extremely satisfactory linearity of the forward current transfer ratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with

2SD1491

Abstract: 2SD1510 TO-22OAB0 2SD1533 2SD1494 2SD1496 2SD1497 2SD1499 2SD1500 2SD1502
Contextual Info: - 252 - M % Ta=25t ,*Ep(äTc=25t;) m fr Vr. Ä Vi"BO V q EO IcCDC) (V) (V) (A) Pc. Pc* CW) (W) 2SD1497 am B iL B iL B iL 2SD1499 föT PA PSW 150 100 10 LF PA/LS PSW 300 300 0.3 1.5 2SD1504 B% B aL LF A/Mut 30 15 0.5 0.3 2SD1505 D —A LF PA 60 50 2SD1506

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 14.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SD1499

Abstract: 2SB1063
Contextual Info: SavantIC Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation · APPLICATIONS ·For high power amplifier applications

2SB1063

Abstract: 2SD1499
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

Contextual Info: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD1499 • Features • V ery good linearity of DC current gain Ii f e • Wide area of safety operation (ASO) • High transition frequency (ft)

2SB1063

Abstract: 2SD1499
Contextual Info: Inchange Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1499 ・Wide area of safe operation ・High fT APPLICATIONS ・For high power amplifier applications PINNING

OF IC 741

Abstract: 741p operation of ic 741 of 741 ic uA 741 IC IC 741 IC ua 74 IC 741 to high current Darlington pair IC 2SB1063
Contextual Info: Power Transistors 2SD1499 2S D 1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m plifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U n it I mm 4.4m ax. 1 0 .2 m a x . ■ Features 2.9m ax • V ery goo d lin earity o f DC c u r re n t gain hhE

2SB1063

Abstract: 2SD1499
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB1063

Abstract: 2SD1499
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open)

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage