2SD1415 Search Results

2SB1020

Abstract: 2SD1415
Contextual Info: JMnic Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications

2SD1415

Abstract: 2SB1020 3A 100V npn LOW SATURATION VOLTAGE
Contextual Info: Inchange Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications

D1415A

Abstract: 2SD1415A d1415
Contextual Info: 2SD1415A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1415A ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 3 V, IC = 3 A)

D1415A

Abstract: transistor D1415A 2SD1415A d1415
Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SD1415

Abstract: 2SB1020 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications

2SD1415A

Contextual Info: SavantIC Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

2SB1020

Abstract: 2SD1415 2sd1415 transistor transistor 2sb1020
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •High DC C urrent Gain: hFE= 2000 Min. @IC= -3A ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415

2SD1415A

Abstract: 100L
Contextual Info: T O S H IB A 2SD1415A 2 S D 1 4 1 5A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D AR LIN G TO N Unit in mm HIGH POWER SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS • ±0.2 -*03.2 •- 10 ±0.3 . - -I

D1415A

Abstract: 2SD1415A
Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SD1415A

Contextual Info: TO SH IBA 2SD1415A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 4 1 5A HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 . 0 3 . 2 ± 0.2 2 .7 ± Q . 2 IP • High DC Current Gain

D1415A

Abstract: transistor D1415A d1415 2SD1415A
Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SD1415A

Contextual Info: TO SH IBA 2SD1415A 2 S D 1 4 1 5A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 High DC Current Gain : hFE = 2000 (Min.) (VCE = 3 V, IC = 3 A)

transistor D1415A

Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

Contextual Info: TOSHIBA 2SD1415A 2 S D 1 4 1 5A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH POWER SWITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 (Min.) (Vq e = 3 V, Iç = 3 A)

2SD1415

Abstract: 310l1
Contextual Info: SILICON NPN TRIPLE DIFFUSE TYPE 2SD1415 DARLINGTON POWER INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. SYMBOL RATING UNIT VCBO 100 V Collector-Emitter Voltage vCEO 100 V Emitter-Base Voltage

2SD1415A

Abstract: 2SD1415 DARLINGTON 3A 100V npn
Contextual Info: Inchange Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

2SB1020

Abstract: 2SD1415
Contextual Info: Inchange Semiconductor Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications

transistor D1415A

Abstract: D1415A
Contextual Info: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SB1020

Abstract: 2SD1415
Contextual Info: SavantIC Semiconductor Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1415 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

2SB1020

Abstract: 2SD1415 IC AH1
Contextual Info: V U 3 > P N P = *Ü A Ít M & - 2SB1020 U > h > n (2 S B 1 0 2 0 m o /N>7 - K7-f7, / t A X Ï - ÿ - îü x m h '7 - f 7 : h p ß —2000 (ft/J') (VCE = - 3 V , IC = - 3 A ) . : V cE ísat) = - 1 . 5 V ( t t * ) d c = - 3 A ) 2SD1415 i => > 7" 'J > > 9 ') IZ t¿ 19 t t o

D1415A

Abstract: 2SD1415A d1415 TR20
Contextual Info: 2SD1415A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1415A ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 3 V, IC = 3 A)

JIS B 0401

Contextual Info: TO SHIBA TENTATIVE 2SD1415A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 7 < ;n id i RA Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • . ^ 3.2 ± 0 .2 2_-7±( .2 High DC Current Gain • h ™ = -9nn n iM

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)