2SD132 Search Results

2SD1325

Contextual Info: Power Transistors 2SD1325 2SD 1325 Package D im ensions Unit ! mm 4.4m ax. 10.2m ax. Silicon NPN Triple-D iffused Planar Darlington Type 2 9max M edium Speed Pow er S w itching • Features 0 3 .1 + 0.1 • 6 0 V Z e n e r d iod e built-in b e tw e e n C and B

Contextual Info: Power Transistors 2SD1321 2SD1321 Package Dimensions U n it ! mm S ilico n N P N Triple-D iffused P la n a r Darlington Type 3.7max. 8. 7 n Medium Speed Power Switching F l.lm ax . 6 . 5 max. _n • Features • 60V Z ener diode built-in b etw een C and B

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

Contextual Info: Power Transistors 2SD1323 Silicon NPN triple diffusion planar type Darlington Unit: mm 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 30±5 V 1.4±0.1 0.8±0.1 0.5 +0.2

2SD0601A

Abstract: 2SD1328 2SD601A XN04505 XN4505
Contextual Info: Composite Transistors XN04505 XN4505 NPN epitaxial planer transistor Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Tr1 Tr2 0.95 3 +0.1 +0.1 0.1 to 0.3 2SD0601A(2SD601A) + 2SD1328 0.4±0.2 1 : Collector (Tr1)

2SD1325

Abstract: 25mJ
Contextual Info: Power Transistors 2SD1325 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage

2SD1323

Abstract: 2A 5v ZENER DIODE
Contextual Info: Power Transistors 2SD1323 Silicon NPN triple diffusion planar type Darlington Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 ● • Absolute Maximum Ratings 16.7±0.3 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30±5 V 4.0 ● 14.0±0.5

2SD1327

Contextual Info: Power Transistors 2SD1327 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm 5.5±0.2 2.7±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit 60±10 V 60±10 V Collector to base voltage VCBO Collector to emitter voltage

BC532

Abstract: 2SD1321 2SD1322 2SD1324
Contextual Info: < _ _ „-* .• fy - >- ‘ ^- . . S , -t-îi; VSfVf,«.«îssaisi".^V»ÇV^iSâS$ÎSï!«^^‘lK^&3C?ÿti PANASONIC INDL/ELEKiSEdl} 7EC D | b^3SflS4 G0[Hb3fc. □ | ^yVX5> _/ ^ 2SD1321 2SD1321 T- 3 3 -> '1 3 >- NPN a a t r t - t W ? - ' > h > / S i NPN Triple

darlington power pack

Abstract: 2SD1323
Contextual Info: Power Transistors 2SD1323 Silicon NPN triple diffusion planar type Darlington Unit: mm ● ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 30±5 V 4.2±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 VCEO 30±5 V Emitter to base voltage

Contextual Info: 2SD1323 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.1k h(FE) Max. Current gain.10k

2sd1323

Abstract: panasonic fc ic 701 panasonic
Contextual Info: P o w er T ra n s is to rs 2SD1323 2S D 1323 Package D im ensions S ilicpn NPN Triple-D iffused Planar Darlington Type U n i t . mn 4 .4 m a x . 10.2 m a x 5 7 max. 2 9max M edium Speed Power Sw itching • Features • 30 V Z e n e r d io d e b u ilt-in b e tw e e n C and B

2SD1326

Abstract: 2SD132
Contextual Info: Power Transistors ^32052 0[llb70ñ 2SD1326 2SD132Ó T3S Package D im ensions Uni t 1 mm I S ilico n N P N Triple-D iffused P la n a r Darlington Type Medium Speed Pow er S w itching • Features • 6 0 V Z e n e r d io d e b u ilt- in b e t w e e n C a n d B

2SD1328

Abstract: marking 1d sot-23
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1328 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low ON resistance Ron. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-emitter saturation voltage VCE sat .

Contextual Info: Power Transistors 2SD1325 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 ● ● Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage

Contextual Info: Power Transistors 2SD1327 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 ● ● Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage

2SD1327

Contextual Info: Power Transistors 2SD1327 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage

2SD1328

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 2 1 (0.95) (0.95) 1.9±0.1

2SD1328

Contextual Info: Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)

2SD1328

Abstract: XN04504G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04504G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For amplification of low-frequency output • Package ■ Features ■ Basic Part Number • 2SD1328 x 2

2SD1326

Contextual Info: Power Transistors 2SD1326 Silicon NPN triple diffusion planar type Darlington Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 ● • Absolute Maximum Ratings 16.7±0.3 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V 4.0 ● 14.0±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 di p Pl lan nclu

Contextual Info: Power Transistors 2SD1325 2SD1325 Package D im ensions U n it ! m m 4 .4 m ax . S ilicon NPN Triple-D iffused Planar D arlington Type 29max M edium Speed Pow er S w itching • Features • • • • • 0 3 .1 + 0.1 60V Zener diode built-in betw een C and B

XN4504

Abstract: 2SD1328 XN04504
Contextual Info: Composite Transistors XN04504 XN4504 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SD1328 x 2 elements ■ Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C)