2SD1271 Search Results

2SB946

Abstract: 2SD1271
Contextual Info: Inchange Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications

2SB0946

Abstract: 2SD1271
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SD1271

Abstract: 2SD1271A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB946/946A ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS

2SB946

Abstract: 2SD1271
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271 APPLICATIONS

2SB946A

Abstract: 2SD1271A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 V Collector-emitter voltage (Base open)

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

ic shelf life

Abstract: 2SD1271A
Contextual Info: Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 150 V Collector-emitter voltage (Base open) VCEO 100 V Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SB946 2SB946 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1271 • Features • • • • Unit ! mm 4.4 max. 10.2max. 5.7 max. 2.9 max. Low collector-emitter saturation voltage VcE<sao

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

2SB946

Abstract: 2SD1271
Contextual Info: SavantIC Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1271 ·Low saturation voltage ·Good linearity of hFE ·High current APPLICATIONS ·For power switching applications

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 14.0±0.5 Parameter Symbol

2SD1271A

Contextual Info: SavantIC Semiconductor Product Specification 2SD1271A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS ·For power switching applications PINNING

2SB946A

Abstract: 2SD1271A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS

2SB94

Abstract: 2SB946 2SD1271
Contextual Info: Power Transistors 2SB94Ó 2SB946 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1271 Unit ! mm 4.4max. 10.2max. • Features • Low collector-em itter saturation voltage V c E < s a t> • Good linearity of DC current gain (Iife)

2SB946

Abstract: 2SD1271 2SD1271A
Contextual Info: Power T ransistors 2SD1271, 2SD1271A 2SD1271, 2SD1271A Silicon NPN Epitaxial Planar Type P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S B 94 6 10.2max. 5.7 max. • Features • • • • Low collector-em itter saturation voltage Vce (sao

2SB946

Abstract: 2SD1271
Contextual Info: JMnic Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications PINNING

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1271A TO – 220F TRANSISTOR NPN 1. BASE FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat) z Satisfactory Linearity of Forward Current Transfer Ratio hFE

2SB946A

Abstract: 2SD1271 2SB0946 2SB946 2SD1271A
Contextual Info: Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 2SB946 and 2SB0946A (2SB946A) Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD1271 base voltage

2SB946

Abstract: 2SD1271
Contextual Info: Power Transistors 2SB946 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SD1271A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)