2SD1259 Search Results

Contextual Info: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage Emitter open Symbol 2SD1259 VCBO 2SD1259A Rating Unit 80 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage (Emitter open) Symbol 2SD1259

2SD1259

Abstract: 2SD1259A
Contextual Info: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage Emitter open Symbol 2SD1259 VCBO 2SD1259A Rating Unit 80 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5

2SD1259

Abstract: 2SD1259A
Contextual Info: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to

Contextual Info: Power Transistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type • Package Dimensions High DC Current Gain hFE , Power Amplifier ■ Features • High DC c u rre n t gain (hFE) • Good linearity of DC cu rre n t gain (I i f e )

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Collector-base voltage (Emitter open) Symbol 2SD1259

2SD1259

Abstract: 2SD1259A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm 6.0±0.2 1.0±0.1 2SD1259 Collector-base voltage

Contextual Info: Transistors SMD Type Product specification 2SD1259;2SD1259A TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2SD1259

Abstract: 2SD1259A
Contextual Info: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to

2SD1259A

Abstract: 2SD1259
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1259;2SD1259A TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2SD1259

Abstract: 2SD1259A
Contextual Info: Power T ransistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type Package Dim ensions High D C Current Gain hFE , Power Amplifier • Features • H igh DC c u r re n t gain (I i f e ) • G ood lin e a rity o f D C c u r re n t gain (hFE)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

2SD1039

Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200

B938A

Abstract: B939A 2SK1967 2SD1316
Contextual Info: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5

2sd2520

Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
Contextual Info: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica­ tion Func­ tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD369A

Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M

2SD2502

Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica­ V ceo tion Func­ (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica­ V ceo tion Func­ (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )

2SD1204

Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691