2SB1251
Abstract: 2SD1251A
Text: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm • Features 6.0±0.2 1.0±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Base current
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2SD1251A
2SB1251
2SD1251A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 1.5±0.1 10.0±0.3 Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
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2SD1251,
2SD1251A
2SD1251
2SD1251A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 3.4±0.3 8.5±0.2 For power amplification 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to
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2SD1251,
2SD1251A
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2SD1251A
Abstract: No abstract text available
Text: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type Unit: mm 10.0±0.3 • Features • Wide area of safe operation ASO • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
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2SD1251A
2SD1251A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm 1.0±0.1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)
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2SD1251A
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2SD1251
Abstract: 2SD1251A
Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 2.0 0.8±0.1 TC=25˚C Ratings 2.54±0.3 5.08±0.5 Unit 1 V 80 Emitter to base voltage VEBO 8 V Peak collector current ICP 6 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C
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2SD1251,
2SD1251A
2SD1251
Fo102
2SD1251
2SD1251A
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2SB1251
Abstract: 2SD1251A
Text: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 8
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2SD1251A
2SB1251
2SD1251A
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2SD1251
Abstract: 2SD1251A
Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 2.0 0.8±0.1 TC=25˚C Ratings 2.54±0.3 5.08±0.5 Unit 1 V 80 Emitter to base voltage VEBO 8 V Peak collector current ICP 6 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C
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2SD1251,
2SD1251A
2SD1251
2SD1251
2SD1251A
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2SD1251
Abstract: 2SD1251A
Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 3.4±0.3 8.5±0.2 For power amplification 1.0±0.1 Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
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2SD1251,
2SD1251A
2SD1251
2SD1251A
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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BD149
Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25
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MJE800T
2N6296
MJE2481
MJE2483
2N3054A
2SD1092
2SD777
2SB604
2SD570
BD149
2N6297 Motorola
LM3661TL-1.40
2SD526-0
2SB5960
Motorola 2N6297
2SD5260
idb596
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1251,2SD1251A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1
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2SD1251
2SD1251A
O-252
2SD1251
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2SD1251
Abstract: 2SD1251A
Text: Transistors SMD Type Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25
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2SD1251
2SD1251A
O-252
2SD1251
2SD1251A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1251, 2SD1251A 2SD1251, 2SD1251A Silicon N P N Trip le -D iffu se d Planar Type P ack age D im ension s P ow e r A m plifier Unit ! • Fe a tu re s 3.7max, 8.7 max. • W ide a re a of s a fe ty o p e ra tio n ASO • “N T y p e ” p ack ag e co n fig u ratio n w ith a cooling fin fo r d ire c t so ld e rin g
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2SD1251,
2SD1251A
2SD1251
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smk 630
Abstract: 2SD1251 2SD1251A A629A
Text: 2SD1251, 2SD1251A P o w er T ra n s is to rs 2SD1251, 2SD1251A Silicon NPN Triple-Diffused Planar Type P a c k a g e D im e n s io n s P o w e r A m p lifie r U n it ! • F e a tu re s • W ide a re a of sa fe ty o p e ra tio n ASO 8.7 max. • “N T y p e " p ack ag e co n fig u ratio n w ith a cooling fin fo r d ire c t so ld e rin g
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2SD1251,
2SD1251A
2SD1251
2sd1251/2sd1251a
smk 630
2SD1251A
A629A
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PA8080
Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)
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2SD1245
2SD1246
2SD1247
2SD1248K
2SD1249
2SD1249A
2SD1250
2SD1259A
2SB937
2SD1260
PA8080
2SD1246
2SD1247
2SD1250A
2SD1251
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691
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2SC4627
2SC5021
-2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
2SD2345
D1274A
B1317
C4714
D1707
b1108
c2258 transistor
D2052 transistor
transistor b1154
2sD2504 transistor
B1398
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