2SD1249 Search Results

2SD1249

Abstract: 2SD1249A
Contextual Info: Power Transistors 2SD1249, 2SD1249A 2SD1249, 2SD1249A Silicon NPN Triple-Diffused Planar Type Package Dim ensions AF Power A m plifier U n it I • Features • High c o lle c to r-b a s e v o ltag e 3.7max. 8.7 max. V cbo • “N T y p e ” p ack ag e co n fig u ratio n w ith a cooling fin fo r d ire c t so ld e rin g

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1249 (Emitter open) 2SD1249A Rating Unit VCBO 350 V 400 V VCEO Emitter-base voltage (Collector open)

W3100

Abstract: 2SD1249 2SD1249A
Contextual Info: Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification • Absolute Maximum Ratings 1.5±0.1 1.0±0.1 1.5max. 1.1max. 2.0 High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1249 (Emitter open) 2SD1249A Rating Unit VCBO 350 V 400 V VCEO Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SD1249, 2SD1249A 2SD1249, 2SD1249A Silicon NPN Triple-Diffused Planar Type Package D im ensions AF Power A m plifier U nit I mm • Features 3.7 max. 1.7 max. • H ig h c o lle c to r - b a s e v o lta g e V c b u h—* 1.1 max. 6.5 m ax.

2SD1249

Abstract: 2SD1249A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1249 (Emitter open) 2SD1249A Rating Unit VCBO 350 V 400 250 V Collector-emitter voltage 2SD1249

2SD1249

Abstract: 2SD1249A
Contextual Info: Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 Collector-base voltage Emitter open Rating Unit VCBO 350 V 2SD1249 2SD1249A 400 VCEO 250 V Emitter-base voltage (Collector open) VEBO 5 V Collector current

2SD1249

Abstract: 2SD1249A
Contextual Info: Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification • Absolute Maximum Ratings 1.5±0.1 1.0±0.1 1.5max. 1.1max. 2.0 High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to

Contextual Info: Product specification 2SD1249, 2SD1249A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High collector-base voltage Emitter open VCBO

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2N5483

Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .

2SC2720

Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110
Contextual Info: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2SD1204

Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202

2SD1250A

Abstract: IC vertical panasonic 2SD1245 2SD1249 2SD1249A 2SD1250 T0220AB
Contextual Info: PANASONIC INDL/ELEK-CSEUI} 72C D | tl ' i a a A S M DDDISSD 7 1 2SD1245 2SD1245 U > h " y / S \ N P N Triple Diffused Planar Darlington v U =i > N P N H i Unit \ mm J= $1:;f)ig'llS ffl/''A F Pow er Amplifier • it • 10.5 ± 0.5 9.8max. etq 7.6min. Oh

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691