2SD1119 Search Results

vebo

Abstract: 2SD1119
Contextual Info: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol

marking TQ

Abstract: 2SD1119 marking 3A sot-89
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1119 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1119 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE(sat)

2SD1119

Contextual Info: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SD1119

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ ue pl d in an c se ed lud

Contextual Info: Transistors IC SMD Type Product specification 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

2SD1119

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te on na

2SD1119G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification • Package • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

2SD1119

Abstract: 5021H
Contextual Info: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SD1119

Contextual Info: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 4.5±0.1 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 3° * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 25 V

UN801

Contextual Info: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm For camera UN1119+2SD1119 ● 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 0.6±0.1 ■ Absolute Maximum Ratings Parameter P N P

2SD1119

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 • Features 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain

Contextual Info: Transistor 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 3° * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 25 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

2SD1119G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

2SD1119

Abstract: marking 3a SOT89 marking 3A sot-89 SOT-89 marking 230
Contextual Info: 2SD1119 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER B Features 2.6 4.25 2.4 3.75 — Low collector-emitter saturation voltage VCE(sat) — Satisfactory operation performances at high efficiency with the low 0.8

2SD1119

Contextual Info: Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

2SD1119

Abstract: UN1119 UN801
Contextual Info: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm M Di ain sc te on na tin nc ue e/ d For camera UN1119+2SD1119 ● 2 5 3 4 0.6±0.1 • Absolute Maximum Ratings Parameter Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des ne ain ain foll

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and