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    2SC563 Search Results

    2SC563 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SC5631JRTL-E Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier Visit Renesas Electronics Corporation
    2SC5631JRTR-E Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier Visit Renesas Electronics Corporation
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    2SC563 Price and Stock

    Panasonic Electronic Components 2SC563200L

    RF TRANS NPN 8V 1.1GHZ SMINI3-G1
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    Panasonic Electronic Components 2SC5632G0L

    RF TRANS NPN 8V 1.1GHZ SMINI3-F2
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    Rochester Electronics LLC 2SC5631JRTR-E

    BIPOLAR TRANSISTOR, 15V, NPN
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    Renesas Electronics Corporation 2SC5631JRTR-E

    Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
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    Verical 2SC5631JRTR-E 45,000 625
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    Bristol Electronics 2SC5631JRTR-E 34,000
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    Quest Components 2SC5631JRTR-E 27,200
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    Rochester Electronics 2SC5631JRTR-E 45,000 1
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    2SC563 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC563 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC563 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC563 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC563 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC563 Unknown Cross Reference Datasheet Scan PDF
    2SC563 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC563 Unknown Scan PDF
    2SC563 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC563 Unknown Vintage Transistor Datasheets Scan PDF
    2SC563 Unknown Vintage Transistor Datasheets Scan PDF
    2SC563 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC563 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC563 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC563 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2SC5631 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC5631 Renesas Technology Silicon NPN Epitaxial Transistor UHF/VHF Wide Band Amplifier Original PDF
    2SC5631 Renesas Technology Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier Original PDF
    2SC5632 Panasonic NPN Transistor Original PDF
    2SC5632 Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC563200L Panasonic RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 8VCEO 50MA S-MINI 3P Original PDF

    2SC563 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cs1m

    Abstract: No abstract text available
    Text: Ordering number:ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN6467 2SC5639 100ns 2SC5639] cs1m

    sc 6038

    Abstract: 2SC5636 transistor 3669 A 4503 ic 1346 transistor making 528
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5636 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5636 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.


    Original     		PDF 2SC5636 2SC5636 sc 6038 transistor 3669 A 4503 ic 1346 transistor making 528

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Features ■ Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2002/95/EC) 2SC5632G

    sc 6038

    Abstract: a 4503 data sheet A 4503 ic ic a 4503 2SC5635 A 3141 s11
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5635 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.


    Original     		PDF 2SC5635 2SC5635 sc 6038 a 4503 data sheet A 4503 ic ic a 4503 A 3141 s11

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2002/95/EC) 2SC5632G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2002/95/EC) 2SC5632G

    str 1096

    Abstract: 307-109 2SC5631
    Text: 2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier REJ03G0128-0300Z Previous ADE-208-981A(Z Rev.3.00 Oct.20.2003 Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz


    Original     		PDF 2SC5631 REJ03G0128-0300Z ADE-208-981A str 1096 307-109 2SC5631

    2SC5632

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10


    Original     		PDF 2002/95/EC) 2SC5632 2SC5632

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10


    Original     		PDF 2002/95/EC) 2SC5632

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2002/95/EC) 2SC5632G

    2SC5631

    Abstract: Hitachi DSA0014 X 0238 CE
    Text: 2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline


    Original     		PDF 2SC5631 ADE-208-981 2SC5631 Hitachi DSA0014 X 0238 CE

    2SC5632

    Abstract: S-Mini3-G1
    Text: Transistors 2SC5632 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification and switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High transition frequency fT • Smini3-G1 type package, allowing downsizing and thinning of the


    Original     		PDF 2SC5632 2SC5632 S-Mini3-G1

    2SC5633

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5633 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5633 is a super mini package resin sealed


    Original     		PDF 2SC5633 2SC5633 SC-62

    2SC5632

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05


    Original     		PDF 2002/95/EC) 2SC5632 2SC5632

    307-109

    Abstract: 2SC5631 DSA003645 X 0238 CE
    Text: 2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981A Z 2nd. Edition Mar. 2001 Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline


    Original     		PDF 2SC5631 ADE-208-981A 307-109 2SC5631 DSA003645 X 0238 CE

    2SC5632

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1


    Original     		PDF 2002/95/EC) 2SC5632 2SC5632

    2SC5632

    Abstract: No abstract text available
    Text: Transistors 2SC5632 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification and switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High transition frequency fT • Smini3-G1 type package, allowing downsizing and thinning of the


    Original     		PDF 2SC5632 2SC5632

    sc 6038

    Abstract: 2SC5634 a 4503 data sheet
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5634 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5634 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.


    Original     		PDF 2SC5634 2SC5634 sc 6038 a 4503 data sheet

    CP25A

    Abstract: 2SC5637
    Text: Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN6465 2SC5637 100ns 2SC5637] CP25A 2SC5637

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN6465 2SC5637 100ns 2SC5637]

    TA-2593

    Abstract: No abstract text available
    Text: Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN6466 2SC5638 100ns 2SC5638] TA-2593

    2SC5638

    Abstract: ENN6466
    Text: Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN6466 2SC5638 100ns 2SC5638] 2SC5638 ENN6466

    2SC563

    Abstract: 2SC563A
    Text: 2SC563, 2SC563A 2SC563, 2SC563A -> ‘J 3 > NPN NPN Epitaxial Planar 7Uti Mfc+nnW«flHM*aJB/Video IF Output Stage 4.95i£max. Unit : mm 4$ IS/Features • 3 ^ ^ * 1 1 ^ 1 C re W /L O W C re ^ Absolute Maximum Ratings Ta=25°C Item ^ 1/ $ & • *"< Symbol


    OCR Scan     		PDF 2SC563, 2SC563A 2SC563 2SC563A

    hitachi ha 1125

    Abstract: marking S76
    Text: 2SC5631 Silicon NPN Epitaxial UHF / VHF wide band amplifier HITACHI Preliminary 1st. Edition Jul. 1999 Features • High gain bandwidth product fT = 11 GHztyp. • High power gain and low noise figure.; PG = 10 dB typ, , NF= 1.2dB typ. at f = 900 MHz Outline


    OCR Scan     		PDF 2SC5631 20-Q0 04B318 hitachi ha 1125 marking S76