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    2SC562 Price and Stock

    Rochester Electronics LLC 2SC5624VH-TL-E

    RF TRANS NPN 3.5V 28GHZ CMPAK-4
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    DigiKey 2SC5624VH-TL-E Bulk 99,000 478
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    Kyocera AVX Components 1812SC562MAT4A

    CAP CER 5600PF 1.5KV X7R 1812
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    DigiKey 1812SC562MAT4A Reel 4,000
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    Newark 1812SC562MAT4A Reel 4,000
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    Kyocera AVX Components 1812SC562MAT1A

    CAP CER 5600PF 1.5KV X7R 1812
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    DigiKey 1812SC562MAT1A Reel 1,000
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    Mouser Electronics 1812SC562MAT1A
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    Newark 1812SC562MAT1A Reel 1,000
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    Kyocera AVX Components 1812SC562MAT2A

    CAP CER 5600PF 1.5KV X7R 1812
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    DigiKey 1812SC562MAT2A Reel 1,000
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    Mouser Electronics 1812SC562MAT2A
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    Newark 1812SC562MAT2A Reel 1,000
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    Kyocera AVX Components 1812SC562MAT3A

    CAP CER 5600PF 1.5KV X7R 1812
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    DigiKey 1812SC562MAT3A Reel 4,000
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    Newark 1812SC562MAT3A Reel 4,000
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    Find more 2SC562 price and stock on Findchips.com

    2SC562 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC562 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC562 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC562 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC562 Unknown Vintage Transistor Datasheets Scan PDF
    2SC562 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC562 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC562 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC562 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC562 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC562 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC562 Unknown Cross Reference Datasheet Scan PDF
    2SC562 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2SC5620 Isahaya Electronics Transistor For Low Frequency Amplify Application Sillcon Npn Epitaxial Type Original PDF
    2SC5621 Isahaya Electronics TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Original PDF
    2SC5622 Panasonic NPN Transistor Original PDF
    2SC5622 Panasonic Silicon NPN triple diffusion mesa type Original PDF
    2SC5623 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC5623 Renesas Technology Silicon NPN Epitaxial High Frequency Low Noise Amplifier Original PDF
    2SC5623 Renesas Technology Silicon NPN Epitaxial High Frequency Low Noise Amplifier Original PDF
    2SC5624 Hitachi Semiconductor Silicon NPN Transistor Original PDF

    2SC562 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N2458

    Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


    Original     		2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253 PDF

    2SC5624

    Abstract: No abstract text available
    Text: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0200Z Previous ADE-208-978(Z Rev.2.00 Oct.21.2003 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz


    Original     		2SC5624 REJ03G0129-0200Z ADE-208-978 2SC5624 PDF

    2SC5629

    Abstract: Hitachi DSA0014
    Text: 2SC5629 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-980 Z 1st. Edition Nov. 2000 Features • Super compact package; (1.6 x 0.8 × 0.7mm) • High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900Mhz, VCE = 1 V)


    Original     		2SC5629 ADE-208-980 900Mhz, 2SC5629 Hitachi DSA0014 PDF

    c 4977 transistor

    Abstract: 702 mini transistor 2SC5621 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN MAG 1832
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.


    Original     		2SC5621 2SC5621 c 4977 transistor 702 mini transistor LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN MAG 1832 PDF

    2SC5626

    Abstract: No abstract text available
    Text: 〈トランジスタ〉 2SC5626 高周波増幅用 シリコンNPNエピタキシァル形（スーパーミニタイプ） 概 要 外 形 図 2SC5626は超小形外形樹脂封止形シリコンNPNエピタ キシァル形トランジスタで高周波増幅用として設計、製


    Original     		2SC5626 2SC5626NPN SC-70 -10mA 2SC5626 PDF

    2SC5626

    Abstract: No abstract text available
    Text: 〈トランジスタ〉 2SC5626 高周波増幅用 シリコンNPNエピタキシァル形（スーパーミニタイプ） 概 要 外 形 図 2SC5626は超小形外形樹脂封止形シリコンNPNエピタ キシァル形トランジスタで高周波増幅用として設計、製


    Original     		2SC5626 2SC5626NPN SC-70 -10mA 2SC5626 PDF

    2SC5624

    Abstract: 2SC5624VH-TL-E
    Text: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0300 Rev.3.00 Feb.21.2005 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz Outline


    Original     		2SC5624 REJ03G0129-0300 PTSP0004ZA-A Unit2607 2SC5624 2SC5624VH-TL-E PDF

    005 418

    Abstract: ZO 607 MA 2SC5628 2SC5628XZ-TL-E PUSF0003ZA-A SC-89
    Text: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0750-0300 Previous ADE-208-979A Rev.3.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V)


    Original     		2SC5628 REJ03G0750-0300 ADE-208-979A) PUSF0003ZA-A 005 418 ZO 607 MA 2SC5628 2SC5628XZ-TL-E PUSF0003ZA-A SC-89 PDF

    bfw34 diode

    Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


    Original     		2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A bfw34 diode LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34 PDF

    C5622

    Abstract: No abstract text available
    Text: Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 26.5±0.5 • Features 2.0 Symbol Rating Unit VCBO 1 500 V Peak collector current Collector current Base current Collector power dissipation TC = 25°C


    Original     		2SC5622 C5622 PDF

    2SC5626

    Abstract: No abstract text available
    Text: 〈Transistor〉 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type Super Mini type DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial ty pe transistor. It is designed f or high f requency amplif y application.


    Original     		2SC5626 2SC5626 SC-70 PDF

    2SC5623

    Abstract: Hitachi DSA0014
    Text: 2SC5623 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-977 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 26 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline


    Original     		2SC5623 ADE-208-977 2SC5623 Hitachi DSA0014 PDF

    2SC5628

    Abstract: ADE-208-979 Hitachi DSA0014
    Text: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979 Z 1st. Edition Nov. 2000 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)


    Original     		2SC5628 ADE-208-979 2SC5628 ADE-208-979 Hitachi DSA0014 PDF

    c5622

    Abstract: 2SC5622 transistor c5622
    Text: Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output Unit VCBO 1 500 V Collector to base voltage Collector to emitter voltage VCES 1 500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12


    Original     		2SC5622 c5622 2SC5622 transistor c5622 PDF

    BTB 600 BR

    Abstract: 2SC5626
    Text: ‫ޓ‬ ‫ޛ‬Transistor‫ޜ‬ 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type Super Mini type DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial ty pe transistor. It is designed f or high


    Original     		2SC5626 2SC5626 SC-70 BTB 600 BR PDF

    ZO 607 MA

    Abstract: 2SC5623 DSA003645
    Text: 2SC5623 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-977 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 26 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline


    Original     		2SC5623 ADE-208-977 ZO 607 MA 2SC5623 DSA003645 PDF

    2SC5624

    Abstract: Hitachi DSA0014
    Text: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-978 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18dB typ. , NF = 1.2dB typ. at f = 1.8GHz Outline


    Original     		2SC5624 ADE-208-978 2SC5624 Hitachi DSA0014 PDF

    panasonic C5622

    Abstract: c5622 2SC5622 2sc562
    Text: Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output φ 3.2±0.1 1 500 V Collector to emitter voltage VCES 1 500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12 A Collector current IC 6


    Original     		2SC5622 panasonic C5622 c5622 2SC5622 2sc562 PDF

    panasonic C5622

    Abstract: c5622 2SC5622
    Text: Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output Unit VCBO 1 500 V Collector to base voltage Collector to emitter voltage VCES 1 500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12


    Original     		2SC5622 panasonic C5622 c5622 2SC5622 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0750-0300 Previous ADE-208-979A Rev.3.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V)


    Original     		2SC5628 REJ03G0750-0300 ADE-208-979A) PUSF0003ZA-A PDF

    2SC5625

    Abstract: isahaya
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5625 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5625 is a super mini package resin sealed silicon NPN epitaxial transistor, 2.5 It is designed for low frequency voltage application.


    Original     		2SC5625 2SC5625 SC-59 isahaya PDF

    2SC5624

    Abstract: DSA003645
    Text: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-978 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18dB typ. , NF = 1.2dB typ. at f = 1.8GHz Outline


    Original     		2SC5624 ADE-208-978 2SC5624 DSA003645 PDF

    ZO 607 MA

    Abstract: zo 607 2SC5628 DSA003645 ECG 1277
    Text: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979A Z 2nd. Edition April 2001 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)


    Original     		2SC5628 ADE-208-979A ZO 607 MA zo 607 2SC5628 DSA003645 ECG 1277 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0750-0300 Previous ADE-208-979A Rev.3.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V)


    Original     		2SC5628 REJ03G0750-0300 ADE-208-979A) PUSF0003ZA-A PDF