2SC5376 Search Results
2SC5376 Price and Stock
Toshiba America Electronic Components 2SC5376-B,LF(B2SC5376-B,LF(B |
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2SC5376-B,LF(B | 93,000 | 7,076 |
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2SC5376-B,LF(B | 123,000 | 1 |
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Toshiba America Electronic Components 2SC5376-A,LF(B2SC5376-A,LF(B |
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2SC5376-A,LF(B | 69,000 | 7,076 |
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2SC5376-A,LF(B | 69,000 | 1 |
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Toshiba America Electronic Components 2SC5376-B(TE85L,F) |
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2SC5376-B(TE85L,F) | 1,456 |
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Toshiba America Electronic Components 2SC5376FV-A,L3F(B2SC5376FV - Transistor Silicon NPN Epitaxial Type |
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2SC5376FV-A,L3F(B | 8,000 | 1 |
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Toshiba America Electronic Components 2SC5376BTE85LFSILICON NPN EPITAXIAL TYPE TRANSISTOR Small Signal Bipolar Transistor, 0.4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon |
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2SC5376BTE85LF | 51,000 |
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2SC5376 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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| 2SC5376 | Unknown | NPN Transistor | Scan | |||
| 2SC5376 |
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SILICON NPN EPITAXIAL TYPE TRANSISTOR | Scan | |||
| 2SC5376 |
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NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, FOR MUTING AND SWITCHING APPLICATIONS) | Scan | |||
| 2SC5376F |
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| 2SC5376FV |
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Silicon NPN Epitaxial Transistor | Original | |||
| 2SC5376FV-A |
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2SC5376 - TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | Original | |||
| 2SC5376FV-B |
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2SC5376 - TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | Original |
2SC5376 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA 2SC5376 T O SH IB A TRANSISTO R SILICON NPN EPITAXIAL TYPE 2SC5376 A U D IO FREQUENCY G ENERAL PURPOSE A M PLIFIER APPLIC ATIO NS Unit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIO NS 1.610.2 0.8 ± 0 . 1, • Low Collector Saturation Voltage : V c e sat (l) = 15mV (Typ.) |
OCR Scan |
2SC5376 400mA OL44IUSYMBOL | |
2SC5376Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • |
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2SC5376 2SC5376 | |
2SC5376Contextual Info: TOSHIBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS • Low Collector Saturation Voltage : V ce sat (l) = 15mV (Typ.) @ Iq = 10mA /Ig = 0.5mA |
OCR Scan |
2SC5376 400mA 2SC5376 | |
2SC5376FContextual Info: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) · High Collector Current: IC = 400 mA (max) |
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2SC5376F 2SC5376F | |
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Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • |
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2SC5376 | |
2SC5376FV
Abstract: sat 1205
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2SC5376FV 2SC5376FV sat 1205 | |
2SC5376Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA · |
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2SC5376 2SC5376 | |
2SC5376FContextual Info: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max) |
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2SC5376F 2SC5376F | |
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Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • |
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2SC5376 | |
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Contextual Info: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max) |
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2SC5376F | |
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Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage |
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2SC5376FV | |
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Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C) |
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HN7G10FE 2SC5376F SSM3K03FE | |
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Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA 0.4 1 2 3 Rating Unit Collector-base voltage |
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2SC5376FV | |
1005 7J
Abstract: 2SC5376CT BK500
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2SC5376CT 1005 7J 2SC5376CT BK500 | |
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Contextual Info: T O SH IB A 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS Low Collector Saturation Voltage : Vc e sat (l) = 15mV (Typ.) @ l£ = 10mA / 1]3 = 0.5mA |
OCR Scan |
2SC5376 400mA 10//S | |
2SC5376FContextual Info: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max) |
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2SC5376F 2SC5376F | |
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Contextual Info: TOSHIBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AN D SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE sat W = 15mV (Typ.) @ 1(3 = 10mA / Ig —0.5mA |
OCR Scan |
2SC5376 400mA | |
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Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C) |
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HN7G10FE 2SC5376F SSM3K03FE | |
2SC5376FContextual Info: 2SC5376F 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5376F ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm • コレクタ飽和電圧が低い: VCE sat (1) = 15 mV (標準) • |
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2SC5376F 2SC5376F | |
BK500
Abstract: 1005 7J
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2SC5376CT BK500 1005 7J | |
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Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage |
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2SC5376FV | |
2SC5376FVContextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage |
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2SC5376FV 2SC5376FV | |
2SC5376Contextual Info: 2SC5376 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5376 ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE sat (1) = 15 mV (標準) |
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2SC5376 2SC5376 | |
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Contextual Info: Reliability Tests Report Product Name: 2SC5376 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s |
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2SC5376 | |