2SC5321 Search Results

2SC5321

Abstract: VHF-UHF Band Low Noise Amplifier
Contextual Info: 2SC5321 TOSHIBA 2SC5321 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2le|2 = 10 dB (f = 2 GHz) 2.1 ¿ 0.1 1.25Ì0 .1

2SC5321

Contextual Info: 2SC5321 TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure High Gain NF = 1.4dB (f = 2GHz) |S2l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA TENTATIVE 2SC5321 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC532 1 U nit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series • • Low Noise Figure High Gain 2.1 ± 0.1 NF = 1.4dB (f = 2GHz) |S21eP = 10dB (f=2GHz)

2SC5321

Abstract: bh marking
Contextual Info: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2le|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)

2SC5321

Contextual Info: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)

B F2g

Contextual Info: TOSHIBA TENTATIVE 2SC5321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r >5 3 1 1 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : |S2 l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)

2SC5321

Contextual Info: 2SC5321 TO SH IBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2le|2 = 10 dB (f = 2 GHz) 2.1 ¿ 0.1 1.25Ì0 .1

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz