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    NEC Electronics Group 2SC5193-T1

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    2SC5193 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5193 NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD Original PDF
    2SC5193 NEC Semiconductor Selection Guide Original PDF
    2SC5193 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5193FB-T1 NEC Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Compact Mini Mold Original PDF
    2SC5193FB-T2 NEC Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Compact Mini Mold Original PDF
    2SC5193-T1 NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD Original PDF
    2SC5193-T2 NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD Original PDF

    2SC5193 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor a708

    Abstract: A1549 a708 transistor transistor A608
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • Low Voltage Operation, Low Phase Distortion • Low Noise


    Original     		PDF PA814T 2SC5193) PA814T-T1 transistor a708 A1549 a708 transistor transistor A608

    pt 8726 transistor

    Abstract: 2SC5193 2SC5193-T1 2SC5193-T2 T88 NEC
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING Units: mm • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5193 2SC5193-T1 2SC5193-T2 pt 8726 transistor 2SC5193 2SC5193-T1 2SC5193-T2 T88 NEC

    lem 55.2

    Abstract: UPA814T 795-29-9 2SC5193 3699 npn NEC 2506 741 LEM
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • Low Voltage Operation, Low Phase Distortion • Low Noise


    Original     		PDF PA814T 2SC5193) PA814T-T1 lem 55.2 UPA814T 795-29-9 2SC5193 3699 npn NEC 2506 741 LEM

    2SC5193

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5193 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5193 2SC5193 2SC5193-T1 25ation,

    nec a1232

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    pt 8726 transistor

    Abstract: PA809T Nec 4558 c 743 LEM KB 7780 2SC5193
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA809T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion (Unit: mm) • Low Noise 2.1±0.1


    Original     		PDF PA809T PA809T-T1 2SC5193) pt 8726 transistor PA809T Nec 4558 c 743 LEM KB 7780 2SC5193

    UPA833TF

    Abstract: 2SC4959 2SC5193 IC 4093 BE
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    C 829 transistor

    Abstract: nec 1441 3906 npn lc 2581 v zo 107 NA P 938 nec 501 t
    Text: DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING • Low Voltage Operation, Low Phase Distortion • Low Noise Units: mm NF = 1.5 dB TYP. @ Vce = 3 V, Ic = 7 mA, f = 2 GHz


    OCR Scan     		PDF 2SC5193 SC-70 2SC5193-T1 2SC5193-T2 C 829 transistor nec 1441 3906 npn lc 2581 v zo 107 NA P 938 nec 501 t

    Transistor C 1279

    Abstract: UPA814T-T1
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR /iPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion • Low Noise (U n it: m m )


    OCR Scan     		PDF uPA814T 2SC5193) PA814T Transistor C 1279 UPA814T-T1

    NEC IC D 553 C

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING • Low Voltage Operation, Low Phase Distortion • Low Noise Units: mm NF = 1 .5 dB TYP. @ V c e = 3 V , Ic = 7 mA, f = 2 GHz


    OCR Scan     		PDF 2SC5193 SC-70 2SC5193-T1 2SC5193-T2 NEC IC D 553 C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD PACKAGE DRAWINGS FEATURES • • Low Voltage O peration, Low Phase Distortion (U n it: m m ) Low Noise


    OCR Scan     		PDF uPA814T 2SC5193)

    Vo 80500 TRANSISTOR

    Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A


    OCR Scan     		PDF NE688 OT-143) PACKAGEOUTUNE39R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 Vo 80500 TRANSISTOR ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400

    NEC uPA 437

    Abstract: f J 6820
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA809T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage O peration, Low Phase D istortion • Low Noise NF = 1.5 dB TYP.


    OCR Scan     		PDF uPA809T 2SC5193) NEC uPA 437 f J 6820