2SC517 Search Results

2SC5172

Contextual Info: 2SC5172 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS SW ITCH IN G REG U LATO R A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. U n it in nun 10*0.3 HIGH SPEED D C-DC CO N VERTER APPLICATIONS. • E xcellent Sw itching Times : tr = 0.7/js (M ax.), tf= 0 .5 //s (M ax.) a t I c = 3A

Contextual Info: 2SA1932 SILICON P N P EPITAXIAL T Y P E Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S . D R IV E R ST A G E A M P L IF IE R A P P L IC A T IO N S. • • High Transition Frequency : f'j' = 70MHz Typ. Complementary to 2SC5174 « 7iT M A X I M U M R A T IN G S (Ta = 25°C

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC5175 U n it in mm H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . • • Low Saturation Voltage : V ç e s a t ~0.4V (MAX.) (at Ic = 2.5A, IB = 125mA) High Speed Switching Time : tstg = 0.8//s (Typ.) M A X I M U M R A T IN G S (Ta = 25°C)

c5174

Abstract: 2SA1932 2SC5174
Contextual Info: 2SC5174 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5174 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1932 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

C5174

Abstract: 2SC5174 2SA1932
Contextual Info: 2SC5174 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5174 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 100 MHz 標準 • 2SA1932 とコンプリメンタリになります。

A1932

Abstract: 2SA1932 2SC5174
Contextual Info: 2SA1932 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1932 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 70 MHz 標準 • 2SC5174 とコンプリメンタリになります。

2SC5173

Contextual Info: 2SC5173 東芝トランジスタ シリコンNPN三重拡散形 2SC5173 ○ 高耐圧一般増幅用 ○ カラーテレビ水平ドライブ用 ○ カラーテレビクロマ出力用 単位: mm • 高耐圧です。 • コレクタ出力容量が小さい。 : Cob = 3.0 pF 標準

Contextual Info: T O SH IB A 2SC5176 2 S C 5 1 76 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER APPLICATIONS • Low Collector Saturation Voltage : V C E ( s a t ) = 0 . 4 V (Max.) (at IC = 3 A )

Contextual Info: 2SC5174 TO SHIBA 2 S C 5 1 74 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0.2 • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1932 01.2 ~ £r M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5173 il TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSE TYPE PCT PROCESS 2 S C 5 1 73 Unit in mm HIGH VOLTAGE SWITCHING AND AM PLIFIER APPLICATIONS COLOR TV HORIZONTAL DRIVER APPLICATIONS 10 COLOR TV CHROM A OUTPUT APPLICATIONS • • • High Voltage

Contextual Info: 2SA1932 TOSHIBA 2 S A 1 932 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIONS 10 • • ± 0.2 i 0 1 .2 High Transition Frequency : frp = 70MHz Typ. Complementary to 2SC5174 M A X IM U M RATINGS (Ta = 25°C)

c5171

Abstract: transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
Contextual Info: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics

2SC5176

Contextual Info: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5176 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.)

transistor NEC D 586

Abstract: sn 7441 ic nec 2701
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consum ption and high gain | S 2 i e |2 = | S 2 i e |2 • 11.5 dB TYP. @ = 10.5 dB TYP. @ Vce =

transistor NEC D 587

Abstract: ic nec 2701 marking 84T MARKING 452 4PIN NEC 2134 transistor 2SC5178 2SC5178R 2SC5178R-T1 2SC5178R-T2 84t MARKING
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5178R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm +0.2 2.9±0.2 (1.8) 0.95 0.85 evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

2SC5176

Contextual Info: 2SC5176 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 5 1 76 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 10 ± 0.2 • • Low Collector Saturation Voltage : VCE (sat)-°-4V (Max-) (at Ie = 3A)

A1932

Abstract: transistor 2SA1932 2SA1932 2SC5174
Contextual Info: 2SA1932 TO SH IB A 2 S A 1 932 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIONS 10 • • ± 0.2 01.2 High Transition Frequency : fx = 70MHz Typ. Complementary to 2SC5174 M A XIM U M RATINGS (Ta=25°C)

Contextual Info: 2SC5172 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5172 Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs (max), • High collector breakdown voltage: VCEO = 400 V

2sc5175

Contextual Info: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 s (typ.) (IC = 2.5 A, IB = 125 mA) Absolute Maximum Ratings (Ta = 25°C)

2sc5171

Contextual Info: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics

A1932

Abstract: transistor 2SA1932 2SA1932 2SC5174
Contextual Info: 2SA1932 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC5174 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

A1930

Abstract: 2SA1930 2sc5171 2sa1930 2SC5171
Contextual Info: 2SA1930 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1930 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SC5171 とコンプリメンタリになります。

d1589

Abstract: transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC5179 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • High gain with low operating current

transistor NEC D 587

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS Low current consum ption and high gain Units: mm |S2ie|2 = 9 dB T Y P . @ V ce = 2 V, Ic = 7 mA, f = 2 GHz