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    2SC509 Search Results

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    2SC509 Price and Stock

    Sanken Electric Co Ltd 2SC5099

    TRANS NPN 80V 6A TO3PF
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    DigiKey 2SC5099 Bulk 1,000
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    Quest Components 2SC5099 800
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    Toshiba America Electronic Components 2SC5096-R,LF

    RF TRANS NPN 10V 10GHZ SSM
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    Toshiba America Electronic Components 2SC5095-R(TE85L,F)

    RF TRANS NPN 10V 10GHZ SC70
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    Mouser Electronics 2SC5095-R(TE85L,F) 3,875
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    Toshiba America Electronic Components 2SC5095-O(TE85L,F)

    RF TRANS NPN 10V 10GHZ SC70
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    Toshiba America Electronic Components 2SC5096-O(TE85L,F)

    Trans RF BJT NPN 10V 0.015A 100mW 3-Pin SSM T/R
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    Verical 2SC5096-O(TE85L,F) 45,000 2,541
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    Rochester Electronics 2SC5096-O(TE85L,F) 45,000 1
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    2SC509 Datasheets (153)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC509 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC509 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC509 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC509 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC509 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC509 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC509 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC509 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC509 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC509 Unknown Cross Reference Datasheet Scan PDF
    2SC509 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC509 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5090 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC5090 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5090 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5090 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5090 Toshiba NPN Transistor Scan PDF
    2SC5090-O Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5090-R Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5091 Unknown Japanese Transistor Cross References (2S) Scan PDF
    ...

    2SC509 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1907

    Abstract: 2SC509 2SC5099
    Text: Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5099 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol


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    PDF 2SA1907 2SC5099 2SA1907 2SC509 2SC5099

    2SA1907

    Abstract: 2SC5099
    Text: SavantIC Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·Complement to type 2SC5099 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol


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    PDF 2SA1907 2SC5099 2SA1907 2SC5099

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5096 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


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    PDF 2SC5096

    2SC5091

    Abstract: 4407 ic data DSA0016975
    Text: 2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SC5091 2SC5091 4407 ic data DSA0016975

    ic 7472

    Abstract: ic 1496 2SC5090 416 J50
    Text: 2SC5090 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5090 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目


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    PDF 2SC5090 SC-70 -j150 -j100 -j250 ic 7472 ic 1496 2SC5090 416 J50

    Untitled

    Abstract: No abstract text available
    Text: 2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SC5096

    Untitled

    Abstract: No abstract text available
    Text: 2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SC5095

    TRANSISTOR A743

    Abstract: No abstract text available
    Text: 2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SC5096 TRANSISTOR A743

    Untitled

    Abstract: No abstract text available
    Text: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)


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    PDF 2SC5096 S21el2

    2SC5092

    Abstract: No abstract text available
    Text: 2SC5092 SILIC0N NPN EPITAXIAL PLANAR T Y P E TRANSISTOR TENTATIVE DATA U nit in mm V H F - U H F BAN D L O W NOISE A M PLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. N F ^ l.ld B , |S2iel2 —13dB f=lG H z + Q2 2.9- Q 3 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC5092 --13dB 2SC5092

    LT 7706

    Abstract: LT 7207
    Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC5097 -j250 LT 7706 LT 7207

    2SA1907

    Abstract: 2SC5099
    Text: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1907 DESCRIPTION • With TO-3PML package • Complement to type 2SC5099 APPLICATIONS • Audio and general purpose P IN N IN G PIN D E S C R IP TIO N 1 E m itter 2 C o lle cto r


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    PDF 2SA1907 2SC5099 2SA1907

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5095 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8dB, |S21el2 = 7.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF 2SC5095 2SC509 S21el2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5093 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 3 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 el2= 9.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF 2SC5093 2SC509

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= 7.5dB f=2GHz Unit in mm 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5096F

    2SC509

    Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
    Text: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 *-r; m 2SC509 i a v 7 V / v f y fri b -* -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±


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    PDF 2SC509 RH-16 2sa509 -30-SO 00X10Oxlmm 2SC509 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5091FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ?<;r i n Q i F T Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF = l.ld B , |S 2 ie l 2 = 7dB f=lG H z 1.2 ±0.05 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC5091FT

    IC marking 2b

    Abstract: 2SC5097 ic 0744
    Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2 .9 • Low Noise Figure, High Gain. • NF=1.8dB, |S2lel2—lOdB f=2GHz - 0.3 -fr M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC5097 IC marking 2b 2SC5097 ic 0744

    2SC5092

    Abstract: ta 693 k 3531 transistor 4011 TOSHIBA
    Text: TOSHIBA 2SC5092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5092 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.2 2 . 9 - 0 .3 • Low Noise Figure, High Gain. • N F=1.8d B , |S2lel2= 9.5dB f=2GHz -fr MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5092 2SC5092 ta 693 k 3531 transistor 4011 TOSHIBA

    working OF IC 723

    Abstract: 2SC5098 IC 7420
    Text: TO SH IBA 2SC5098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5098 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. • N F=1.8dB, |S2lel2—lOdB f=2GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5098 working OF IC 723 2SC5098 IC 7420

    2SC5096FT

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5096FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ± 0 .0 5 Low Noise Figure, High Gain. NF=1.8dB, |S2iel2= 7.5dB f=2GHz 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC5096FT 0022g 2SC5096FT

    2SC5091FT

    Abstract: toshiba M7
    Text: 2SC5091FT TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F=l.ldB, |S2iel2= 7dB f=lGHz 1.2 ± 0 .0 5 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC5091FT 0022g 2SC5091FT toshiba M7

    2SC5091

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.l d B , |S2lel2= 7dB f= lG H z Unit in mm 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5091 2SC5091

    TOSHIBA D 799

    Abstract: 2SC5097
    Text: TO SH IBA 2SC5097 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F - U H F BAND LO W NOISE A M PLIFIER APPLICATIONS Unit in mm + 0.2 • Low Noise Figure, High Gain. • N F = 1 .8 d B , |S 2 lel 2 —lOdB 2 .9 -0 .3 -fr -3 f=2G H z M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC5097 TOSHIBA D 799 2SC5097