2SC4939 Search Results

2sc4939

Abstract: 690 lc
Contextual Info: K7 > 9 s 2SC4939 £ /Transistors 2SC4939 I \ ¿ $ * y 7 J \ ' 7 l s - Í - M N P N v lJ ^ > b 7 > y Z $ Epitaxial Planar NPN Silicon Transistor "J $ ’ > • « ft >^ffl/High Speed Switching • W B \fii;ll/'D im ensions U nit: mm 1) tfS0.3us, (¡o— 6A)

Contextual Info: 2SC4939E Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

transistor C5001

Abstract: C5001 transistor TRANSISTOR MARKING YB transistor marking C5001 c5001 C5001 R marking code Yb Transistor 2SC5001F5 2sc4939 CC OWV W
Contextual Info: 2SC4939 Transistor, NPN Features • available in PSD package • high-speed switching, typically, tf < 0.3 |xs for lc = 6A • low collector saturation voltage, typically VcE sat ^0-3 Vfor lc/lB = 6A/0.3A • wide safe operating area (SOA) Applications • high speed dc-dc converter

Contextual Info: h7 > V 2SC4939 $ / I ransistors 2SC 4939 H * y U = l> h -7 Epitaxial Planar NPN Silicon Transistor *y f-> ? ffl/H ig h Speed Switching • fl-J f^ ä ^ /D im e n s io n s (Unit : mm) 1) tf^ 0 .3 n s , (!c = 6 A ) 2) V c e (sat)— 0.3 V (lc /lB = 6 A /0 .3 A )

Contextual Info: 2SC4939D Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: 2SC4939 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SC4939

Contextual Info: 2SC4939 Transistor, NPN Features Dimensions U nits: mm • available in P S D package • high-speed switching, typically, tf < 0.3 |xs for lc = 6 A • low collector saturation voltage, typically V CE/sat) < 0.3 V for lC/lB = 6 A/0.3 A • wide safe operating area (SOA)

Contextual Info: 2SC4939F Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

JIS C7021 A-11

Contextual Info: Transistors Quality assurance and reliability Quality assurance and reliability •Q ua lity Assurance Measures JIS Japan Industrial Standards defines reliability to be “the ability for an item to perform a required func­ tion under given conditions for a specified time”. This

IMH10

Contextual Info: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209

transistor b1184

Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
Contextual Info: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K

transistor 390

Abstract: 2SD1834
Contextual Info: Bipolar transistors-2SA series MPT3, CPT F5, and PSD summary Table 2 Bipolar transistor MPT3, CPT F5, and PSD summary Sheet 1 of 2 Package Appli­ cation VCEO •c max * V CES * V CER (A) (A) 2SB1132 -32 -1 -2 2★ 2SA1900 -50 -1 -2 2★ -50 -3 -4.5 -32

2SC4672 equivalent

Abstract: 2SC2412KX2 2SC1514K equivalent 2sa1455k SO68 2SB1181F5 equivalent csc 354 2SB1386 equivalent FMC3A FMW5
Contextual Info: h /T ra n sisto rs /\°'y JT — v ^ J ^ fp p — f l ü / L i s t of Products for Each Package • EM3 Extreme M ini-m old 3pir Part No. Application V c e o (V) IC(A) iC Max.(A) PC(W) fj(M H z) Cob(pF) Page h FE lc(mA) V c e (V) 2SC4617 Pre Amp 50 0 15

Contextual Info: RONfTI MPT • CPT F5 • PSD Application MPT CPT FS -3 2 -1 - 2* - 8 2 -3 9 0 POR -3 -1 0 0 - -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - _ 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 -3 9 0 P Q R -3 -5 0 0 - - -8 0 -0 .7 - 2*

JIS C7021 B-11

Abstract: 2SA1576A 2SA1774 2SC2412K 2SC4081 2SC4617 C7021 H63A
Contextual Info: Quality assurance and reliability Transistors Quality assurance and reliability !Quality Assurance Measures JIS Japan Industrial Standards defines reliability to be “the ability for an item to perform a required function under given conditions for a specified time”. This can be

Contextual Info: MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *Vcís* , Vcer Part No. (A) Pc (W) Ic Max. (A) MPT (Ta=25'C ) hFE m (Tc=25'c) Vce (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82—390 -3 -1 0 0 - w an ’ 2SA1900 - - -5 0 -1 -2 2* - 82—390