2SC4207 Search Results

Contextual Info: 2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4207 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120 to 700

2SA1618

Abstract: 2SC4207
Contextual Info: 2SC4207 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4207 ○ 低周波増幅用 単位: mm • スーパーミニ (5 端子) パッケージに 2 素子を内蔵しています。 • 2 素子間のペア性が良い。

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4207 Unit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. +0.2 2.8 - 0 3 + 0.2 1 .6-0.1 • Small Package Dual Type • High Voltage and High current : VCEO = 50V, Iq = 150mA (Max.) • High hj>E : hEF = 120-700

Contextual Info: T O SH IB A 2SC4207 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4207 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. U nit in mm + 0.2 2.8 -0 .3 Sm all Package (Dual Type) 1. 6 High Voltage and High current : V 0 eO = 5OV, I ç = 150mA (Max.)

Contextual Info: TOSHIBA 2SC4207 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC42Q7 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. + 0.2 2.8 '0 .3 Small Package (Dual Type) High Voltage and High current : VCEO = 50V, I c = 150mA (Max.)

2SA1618

Abstract: 2SC4207
Contextual Info: TOSHIBA 2SC4207 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4207 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. + 0.2 Small Package (Dual Type) High Voltage and High current : V ç;e O = 50V, 10 = 150mA (Max.) High hpE : hEF = 120~700

125L

Abstract: 2SA1618 2SC4207
Contextual Info: TO SH IBA 2SC4207 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4207 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Small Package (Dual Type) High Voltage and High current : V ç;e O - 50V, 1(2 —150mA (Max.) High hpE • hEF = 120—700

Contextual Info: Reliability Tests Report Product Name: 2SC4207 Package Name: SMV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SA1618

Abstract: 2SC4207
Contextual Info: 2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4207 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 •

2SA1618

Abstract: 2SC4207
Contextual Info: 2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4207 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 •

Contextual Info: 2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4207 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 •

2sc4207

Abstract: 2SA1618
Contextual Info: 2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4207 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) · High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · High hFE: hFE = 120~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SA1618

Abstract: 2SC4207
Contextual Info: 2SA1618 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1618 ○ 低周波増幅用 単位: mm • スーパーミニ (5 端子) パッケージに 2 素子を内蔵しています。 • 2 素子間のペア性が良い。

Contextual Info: 2SA1618 Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. + 0.2 2.8 -0 .3 • Small Package Dual Type • High Voltage and High Current : VcEO= —50V, Iç; = —150mA (Max.) • High hpE : hFE = 120~400 • Excellent hyjg Linearity

2SC4142

Abstract: T0220MF 2SC4212 2SC4211 2SC4239 2SC4202 2SA1619A 2SA1623 2SC4201 2SC4204
Contextual Info: - 192 - n n Ta=25'Ct *Ep(àTc=25‘ t 3$ £ tt a g V’ cBO VcEO (V) (V) Ic(pc) (A) 2SC4201 * 2 HS Sf/CBT Vont 100 100 0.5 2SC4202 j r s HS SÏ/CST Vout 100 100 0.5 2SC4204 H # 2SC4205 p — A t± m % Pc Pc* I.CBO. (W) (W) (jttA) 1.5 (max) (min) (Ta=25D0 )