2SC3845 Search Results

Contextual Info: 2SC3845 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3845

Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 374=17ta 0 ü l b b 3 0 ö O I F M I 31E D T - 3i ' l 3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3845 Silicon High Speed Power Transistor 2SC3845 800V, 3A ABSOLUTE M AXIMUM RATINGS Parameter Sym bol C onditions

2SC3843

Abstract: 2SC3845 2SC3842 2SC3844 2SC3846 2SC3847 2SC3947
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 374=17ta 0 ü l b b 3 0 ö O I F M I 31E D T - 3 i'l3 January 1990 Edition 1.1 FUJITSU P R O D U C T PR O FILE - 2SC3845 Silicon High Speed Power Transistor 2SC3845 800V, 3A A BSO LU T E M A X IM U M R A T IN G S

2SC3819

Abstract: 2SC3852A 2SC3818 PA2012 2SA1488 251C 2SC3815 2SC3817 2SC3820 2SC3821
Contextual Info: - 174 - Ta=25^C, *EPÍáTc=25eC m 2SC3815 % ít S B m m & 900MHz PA Vc b o Vc e o (V) (V) m Ic(DC) Pc Pc* (A) (W) (W) 20 12 1.5 I c bo (max) (/¿A) 17.5 V’cB % (min) M tÉ (max) (V) 250 15 (Ta=25cO ) [*En(itypfiI] hF E 20 200 VCE (V) Ic/lE (A) (V) 7 0.2

2SC3844

Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Contextual Info: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg

TUNER UV915E

Abstract: UV916E U943C UV816 UV915E UV617 UV618 54175 OFWG3254 BF970
Contextual Info: TELEVISION TUNERS C O A X IA L A E R IA L INPUT ASSEMBLIES page Selection guides V H F /U H F television tu n e rs . V H F /U H F television fro n t e n d s .

2SC3847

Abstract: 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D B 3 7 4 c]7t.5 D 0 1 b b 4 S 4 Q FMI r January 1990 Edition 1.1 - — - 3 3 FUJITSU PRODUCT PROFILE 2SC3947 Silicon High Speed Power Transistor 2SC3947 50 0 V , 5A A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bo l

2SC3845

Abstract: 2SC3842 2SC3847 2SC3844 6011s 2SC3843 2SC3846 fujitsu tg h
Contextual Info: 31E J> FUJITSU MICROELECTRONICS O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Parameter Sym b ol C onditions Rating U nit -5 5 ~ +150

2SC3842

Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature

2SC3842

Abstract: 2SC3847 2SC3948 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947 2SC3949
Contextual Info: FU JI TSU M I C R O E L E C T R O N I C S 31E D C2 3 7 4 ci?t,B O O l b b S O 3 E I F M I r - 3 January 1990 Edition 1.1 FUJITSU PRODUCT P R O FILE- 2S C 3949 Silicon High Speed Power Transistor 2SC3949 500V , 15A ABSOLUTE M A X IM U M RATIN GS Parameter Sym bol