2SC3506 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Symbol Rating Unit VCBO 1 000 V Collector-emitter voltage (E-B short)

2SC3506

Contextual Info: Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Features Symbol Rating Unit VCBO 1 000 V Collector-emitter voltage (E-B short) VCES 1 000 V Collector-emitter voltage (Base open)

Contextual Info: 2SC3506 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.0k I(C) Max. (A)3 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)1k V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2

2SC3508

Abstract: 2SC350 2SC3506 2SC350E
Contextual Info: Power Transistors ^32052 2SC350¿ DDlb433 346 2SC3506 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Speed Switching • Features Unit ! mm 5.2.max. ^ 15-Smax. 6.9m in. • High speed switching 3.2' • High collector-base voltage Vcbo

Contextual Info: Power Transistors 2SC3506 Silicon NPN triple diffusion planar type Unit: mm For high-speed switching 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features 21.0±0.5 16.2±0.5 (3.5) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Parameter Rating Unit VCBO

2SC3506

Abstract: SC-92
Contextual Info: Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 1 000 V Collector-emitter voltage (E-B short) VCES 1 000 V

2SC3506

Contextual Info: JMnic Product Specification 2SC3506 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ・For high-speed switching applications

2SC3506

Contextual Info: SavantIC Semiconductor Product Specification 2SC3506 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications

2SC3506

Contextual Info: Inchange Semiconductor Product Specification 2SC3506 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS

Contextual Info: Pow er T ra n sisto rs 2SC350¿ b^3Efi5E 0 G l b 4 3 3 346 2SC3506 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Speed Switching • Features Unit ! mm 5.2max. . l5.Smax. 6.9min. • High speed sw itching • High collector-base voltage Vcbo

2SC3506

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open)

SDT710

Abstract: DTS723 DTS708 STI660 DTS-714 DTS-723 PT8810 IR708 DTS411 dts710
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max V BR CEO (A) Of) PD ICBO Max hFE »T ON) Min (Hz) (A) '<CE)Mt Max (s) Max (Ohms) Top«r Max Package Style CO Devices 20 Watts or More, (Cont'd) I. . . .5 10 15 20 2SC3506 2SC3533

PT10V

Abstract: 2SC3506 AL 250V
Contextual Info: Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm • Features ● ● ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Ratings Unit VCBO 1000 V VCES 1000 V Collector to emitter voltage VCEO 800 V

2SC3506

Contextual Info: Power Transistors 2SC3506 Silicon NPN triple diffusion planar type Unit: mm For high-speed switching 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features 21.0±0.5 16.2±0.5 (3.5) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Parameter Rating Unit VCBO

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Toshiba 355-1

Abstract: 2SC3555 3563 2SC351 2SC4158 2SC3531 2sc3153 2SC3170 NEC 3552 2SC3556
Contextual Info: 166 - m % Type No. 2SC 3534 J 2SC 3535 ^ 2SC 3536 V 2SC 3540 ^ tt B m. B B V m ì s 2SC 3544 , 2SC 3545 ^ 2SC 3546 B B m 2SC 3547 2SC 3547A 2SC 3547B 36 $ S $ 3548 3549 3550 3551 3552 3553 3554 3555 3556 3557 3558 3559 3560 3561 3562 S JE S S 2 / *±S» * ± * »

NEC k 3654

Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC5283

Abstract: 2SC5157
Contextual Info: Transistors Selection Guide by Applications and Functions I Switching Power Transistors o > > Appli­ cation VcEO lc (V) (A) VcE(sat) (V) lc Package (No.) 1b (p s | (A) (mA) MT3 (D40) MT4 r 0 -220(a) TO-220F(a) TO-220E T0220D N Type (055) (D52) {041} (D59)

2SC3500

Abstract: 2SC3493 2SC35001 2SC3511 2SA1386 2SC3520 2SC3531 2SC3536 2SC3495 2SC3494
Contextual Info: - 160 - Ta=25°C. *EP(ÌTc=25‘ C m % t± £ m 2SC3493 B \L VHF A/TV VHF 2SC3494 B ÌL FM RF/IF A 2SC3495 ìé LF A M Vc b o VcEO ICCDC) Pc Pc* IcBO (V) (V) (A) (W) (W) (/¿A) 15 12 % ft 4# ti (Ta=25tC ) [*EP(Ìtyp hp *CB (V) 0.02 0.15 0. 3 12 \ ni aA/

KA 3264

Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
Contextual Info: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *