2SC339 Search Results

M338

Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN
Contextual Info: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT

2sc710

Abstract: 2sc1741 2SC366 2SC380 2sc944 2sC1674 2SC4641 2SC1815 2SC3393 2SC931
Contextual Info: - m € Type No. SANYO 2SC4641 S RH* •$. SIS* B t z i - H i ä drÜ 2SC3393 2SC3393 2SC4455 917 918 920 H 15 2SC2839 2SC 921 * 2SC 922 f 2SC 923 b B B B V m w. m. S «E -— 2SC2999 2SC2999 2SC4641 = H H * ;¥ # = = H ;¥ m n * 2SC 931 • 2SC 932 ^ 2SC 933 f-

Contextual Info: SANYO SEMI CONDUCTOR 2SA1342, 2SC3396 CORP 2EE D • TTTTOTb 0007324 T ■ r~ 3 i~ i3 ” P N P /N PN Epitaxial Planar Silicon Transistors 2018a Switching Applications with Bias Resistances R1=22kO, R2=22kO 1234C Applications • Switchïng circuit, ¡averter circuit, interface circuit, driver circuit.

Hitachi DSA002755

Contextual Info: 2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline 2SC3391 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

Contextual Info: 2SC3391 Silicon NPN Epitaxial Planar HITACHI Application V H F amplifier, M ixer, Local oscillator Outline SPAK 1 r 1 3 1. Emitter 2. Collector 3. Base 481 2SC3391 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO

2SA1338

Abstract: marking ay marking al 2SC3392
Contextual Info: Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V. · Large current capacitiy and high fT.

2SA1339

Abstract: 2sc3393 mt 1392
Contextual Info: Ordering number:EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features Package Dimensions • Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO= – 50V.

Contextual Info: 2SC3398 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: 2SC3392-4 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200

Contextual Info: 2SC3391 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.5u @V(CBO) (V) (Test Condition)

2SC3391

Abstract: 2SC535 Hitachi DSA00233
Contextual Info: 2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3391 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage

smd marking AY

Abstract: 2SC3392
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3392 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High breakdown voltage : VCEO=50V. 0.55 Adoption of FBET process. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Large current capacitiy and high fT.

Contextual Info: H ITACH I 2SC3390 S IL IC O N N P N E P IT A X IA L „ <2U«i. _ LOW FREQUENCY LOW NOíSS AMPLIFIER •HF AMPLIFIE« jJ BiKri il i‘ ji. :j 1 „ K M < l l U ü t. 1 * * Ç-.I ¡i lì ¡ 3Í *. Cv-ìf» •’>* 1*11 î l a* iS P A K I ABSOLUTE MAXIMUM RATINGS Ta=25T )

DTC144E

Abstract: 2SC3399 HC144E KSR1204
Contextual Info: N PN 汕头华汕电子器件有限公司 D I G I TAL TRANSISTOR 对应国外型号 DTC144E,2SC3399,KSR1204 HC144E █ 主要用途 █ 外形图及引脚排列 开关接口电路等。 █ 极限值（Ta=25℃） TO-92S T stg ——贮存温度………………………………… -55~150℃

2SA1341

Abstract: 2SC3395 transistors marking HJ k 2059 TRANSISTOR LCH10 BU 2058 SANYO CP TA RESISTOR 22E 1W transistor npn d 2058
Contextual Info: SANYO SEMI CONDUCTOR 2SA1341, 2SC3395 CORP E2E I> • TTìTOTb 0007325 S ■ T-37-13 T -3 S -U PN P/N P N Epitaxial Planar S ilico n Transisto rs ♦ 2 0 1 8A Switching Applications with Bias Resistances R1=47kO, R2=47kiì 1233C Applications • Switching circuit, inverter circuit, interface circuit, driver circuit.

2SC3393

Abstract: 2SA1339
Contextual Info: 2SA1339 / 2SC3393 Ordering number : EN1392C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1339 / 2SC3393 High-Speed Switching Applications Features • • • • Ultrasmall-sized package permitting sets to be smallsized,slim. High breakdown voltage : VCEO= – 50V.

Contextual Info: 2SC3392-7 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.280 h(FE) Max. Current gain.560

A1345

Abstract: 2SC3399 2SA1345 2sc339
Contextual Info: Ordering num ber: EN 1 2 8 7 C i 2SA1345/2SC3399 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO Switching Applications with Bias Resistance i A pplicationi Switching circuit, inverter, interface circuit, driver Feature» ► Built-in bias resistor (R*j=47k£l,

Contextual Info: Ordering number: EN 1392A _ 2SA1339/2SC3393 N0.1392A SA\YO PNP/ NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Very small-sized package permitting sets to be small-sized, slim High breakdown voltage: Vc e o = ” 50V

Contextual Info: SANYO SEMICONDUCTOR 2SA1341, 2SC3395 CORP E2E I> • TTìTOTb 0007325 S ■ T-37-13 T - 3 S - U ♦ P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances R1=47kO, R2=47kiì 1233C Applications • Switching circuit, inverter circuit, interface circuit, driver circuit.

Contextual Info: Ordering number: EN 1287C 2SA1345/2SC3399 PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications _ with Bias Resistance Applications Switching circuit, inverter, interface circuit, driver Features • Built-in bias resistor (R i=47ki2, R2=47kiî).

C3656

Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
Contextual Info: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)

MARKING AL

Abstract: 2SA1338
Contextual Info: ¡ Ordering number EN 1 4 2 1 A J SA S.YO 2SA1338/2SC3392 N0 . 14 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fi>

XM21A

Abstract: C-160304 2SA1338 2SC3392 A1338 00B7
Contextual Info: SANYO SEMICONDUCTOR CO RP 22E D 2SA1338, 2SC3392 • 7 ‘n7Q7fci 0 Q 0 7 0 4 Ö Q ■ T-37-15 T-3S-U P N P /N PN Epitaxial Planar Silicon Transistors 2018A High-Speed Switching Applications Features • Adoption of FBET process • High breakdown voltage; VCEO= ->50V