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    2SC3298 Search Results

    2SC3298 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3298 Various Russian Datasheets Transistor Original PDF
    2SC3298 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3298 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3298 Unknown Cross Reference Datasheet Scan PDF
    2SC3298 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3298 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3298 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3298 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3298 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3298 Unknown Scan PDF
    2SC3298 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3298 Toshiba SILICON NPN EPITAXIAL TYPE Scan PDF
    2SC3298 Toshiba TO-220 Package Transistors Scan PDF
    2SC3298A Various Russian Datasheets Transistor Original PDF
    2SC3298A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3298A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3298A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3298A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3298A Toshiba TO-220 Package Transistors Scan PDF
    2SC3298B Motorola 1.5 A 200V 20W complementary silicon power NPN stransistor Scan PDF

    2SC3298 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1306

    Abstract: 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298 2SC3298A 2SC3298B
    Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications


    Original     		PDF 2SA1306 2SA1306A 2SA1306B O-220Fa 2SC3298 2SC3298A 2SC3298B 2SA1306 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298B

    2sa1306

    Abstract: 2SA1306 2SC3298 2SA1306A 2SA1306/A Transistor 2SA1306B 2sc3298 circuits 2SC3298 transistor 2SC3298A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B


    Original     		PDF 2SA1306/A/B -160V -2SA1306 -180V -2SA1306A -200V -2SA1306B 2SC3298/A/B 2SA1306 2SA1306A 2sa1306 2SA1306 2SC3298 2SA1306A 2SA1306/A Transistor 2SA1306B 2sc3298 circuits 2SC3298 transistor 2SC3298A

    2SA1306

    Abstract: 2SA1306A 2SA1306B 2SC3298 2SA1306 2SC3298 2SC3298A 2SC3298B
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION •With TO-220Fa package ·Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications


    Original     		PDF 2SA1306 2SA1306A 2SA1306B O-220Fa 2SC3298 2SC3298A 2SC3298B 2SA1306 2SA1306A 2SA1306B 2SA1306 2SC3298 2SC3298B

    2SA1306 2SC3298

    Abstract: 2sc3298 2SC3298B 2SC3298A 2SA1306 2SA1306A 2SA1306B silicon power transistors
    Text: Product Specification www.jmnic.com 2SC3298 2SC3298A 2SC3298B Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications


    Original     		PDF 2SC3298 2SC3298A 2SC3298B O-220Fa 2SA1306 2SA1306A 2SA1306B 2SC3298 2SC3298A 2SA1306 2SC3298 2SC3298B 2SA1306B silicon power transistors

    Untitled

    Abstract: No abstract text available
    Text: 2SC3298 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240


    Original     		PDF 2SC3298 Freq100M StyleTO-220var

    2SA1306 2SC3298

    Abstract: 2SC3298 2SC3298A 2sa1306 2SC3298B 2sa1306a 2SA1306B
    Text: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications


    Original     		PDF 2SC3298 2SC3298A 2SC3298B O-220Fa 2SA1306 2SA1306A 2SA1306B 2SC3298 2SC3298A 2SA1306 2SC3298 2SC3298B 2SA1306B

    2SA1306

    Abstract: 2SA1306A 2SA1306B 2SA1306 2SC3298 2SC3298 transistor 2SC3298
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B


    Original     		PDF 2SA1306/A/B -160V -2SA1306 -180V -2SA1306A -200V -2SA1306B 2SC3298/A/B 2SA1306 2SA1306A 2SA1306 2SA1306A 2SA1306B 2SA1306 2SC3298 2SC3298 transistor 2SC3298

    2SA1306 2SC3298

    Abstract: 2SC3298 2SC3298A 2SA1306 2SC3298B 2SA1306A 2SA1306B
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications


    Original     		PDF 2SC3298 2SC3298A 2SC3298B O-220Fa 2SA1306 2SA1306A 2SA1306B 2SC3298 2SC3298A 2SA1306 2SC3298 2SC3298B 2SA1306B

    2SC3298

    Abstract: 2SA1306 2SA1306 2SC3298 2SA1306 toshiba 2SC3298A SC3298 2SA1306A 2SA1306B 2SC3298B toshiba tb 607
    Text: TOSHIBA TO S H IB A D Ë ^ m T a S O aD0 7 b7 S D ^ f r' 2SC3298 2SC3298A 2SC3298B 9 0 9 7 2 50 "st OISCRETE/OPTO> S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS <D I S C R E T E / O P T O ) 5òC 07675 o r - POWER AMPLIFIER APPLICATIONS. n -o Unit in ima


    OCR Scan     		PDF 2SC3298 2SC3298A I2SC3298B 100MHz 2SA1306, 2SA1306A, 2SA1306B DD07b7S 2SA1306 2SA1306 2SC3298 2SA1306 toshiba 2SC3298A SC3298 2SA1306A 2SA1306B 2SC3298B toshiba tb 607

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC3298B Transistor U n it in m m 1 Ù3MAX. Silicon NPN Epitaxial Type PCT Process Power, Driver Stage Amplifier Applications F e a tu re s • High Transition Frequency - fT = 100MHz (Typ.) • Complementary to 2SA1306B A b s o lu t e M a x im u m R a t in g s (Ta = 2 5 C)


    OCR Scan     		PDF 2SC3298B 100MHz 2SA1306B 2SC3298B

    2SC3298A

    Abstract: 2SC3298 2SA1306 toshiba 0D07T
    Text: Sb TOSHIBA {DISCRETE/OPTO} 2SC3298 2SC3298A 2SC3298B 9097250 T O S H IB A DE~jj ^ 0 ^ 7 5 5 0 G D D ? t 7 S SILICON NPN EPIT A X IA L TYPE PCT PROCESS 5ôC (D IS C R ETE /O PTO ) 07675 o r - POWER AMPLIFIER APPLICATIONS. n -o 7 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS.


    OCR Scan     		PDF 2SC3298 2SC3298A I2SC3298B 100MHz 2SA1306, 2SA1306A, 2SA1306B 2SC3298B 2SA1306 toshiba 0D07T

    2sc3288

    Abstract: 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287
    Text: - 152 - mXËfâ M 2SC3279 2SC3280 2SC3281 2SC3282A 2SC3283A 2SC3284 2SC3285 2SC3286-M 2SC3287 2SC3288 2SC3289 2SC3292 2SC3293 2SC3294 2SC3296 2SC3298 2SC3298A 2SC3298B 2SC3299 2SC3302 2SC3303 2SC3306 2SC3307 2SC3309 2SC3310 2SC3311 2SC3311A 2SC3312 2SC3313


    OCR Scan     		PDF 2SC3279 2SC3280 2SC3281 2SC3282A 800MHz 2SC3283A 2SC3284 2SC3285 2SC3286-M 2sc3288 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287

    1306B

    Abstract: 2SA1306B
    Text: TO SHIBA 2SA1306B Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process 1Q3M AX. For General Purpose Switching and Amplifier Applications Features • High Transition Frequency : fT = 100M Hz (Typ.) • Com plem entary to 2SC3298B Absolute Maximum Ratings (Ta = 25 C)


    OCR Scan     		PDF 2SA1306B 2SC3298B 1306B 1306B 2SA1306B

    2SC3298B

    Abstract: 2SA1306B 2SA1306
    Text: TO SH IB A DISCRETE/OPTO 45E D • □ □ 1 7 ñ l ci 3 « T O S M TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3298B "T • POWER AM PLIFIER APPLICATIONS. Unit in ram DRIVER STAGE AM PLIFIER APPLICATIONS. 0 3 .2 ± Q 2 FEATURES: . High Transition Frequency : fT=100MHz (Typ.)


    OCR Scan     		PDF 2SC3298B 100MHz 2SA1306B 2SC3298B 2SA1306B 2SA1306

    2sc3298

    Abstract: 2SA1306 2SC3298 3298B 2SC3298A 2sa1306
    Text: 2SC3298,3298A,3298B SUCON NPNEPTAXAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 1 0 . 3 MAX. FEATURES: . High Transition Frequency : fT~100MHz Typ. . Complementary to 2SA1306, 2SA1306A, 2SA1306B MAXIMUM RATINGS CHARACTERISTIC


    OCR Scan     		PDF 2SC3298 3298B 100MHz 2SA1306, 2SA1306A, 2SA1306B 2SC3298A 2SC3298B 2SA1306 2SC3298 3298B 2sa1306

    21g transistor

    Abstract: 2SA1306B
    Text: TOSHIBA TRANSISTOR 2SA1306B SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency : fT=100MHz (Typ.) . Complementary to 2SC3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1306B 100MHz 2SC3298B 2SA1306B 2SA1306B1 -160V, -10mA, -100mA -500mA, 21g transistor

    2sA1306

    Abstract: 2SA1306A C5C5.1 1306B K158 2SA1306B
    Text: SILICON PNP EPITAXIAL TYPE 2SA1306,1306A,1306B POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 0Z.2±O.2 FEATURES: . High Transition Frequency : fx=100MHz Typ. . Complementary to 2SC3298, 2SC3298A, 2SC3298B MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SA1306 1306B 100MHz 2SC3298, 2SC3298A, 2SC3298B 2SA1306A 2SA1306B C5C5.1 1306B K158

    2sa1306

    Abstract: 2SA1306B 2SC3298B CI43 Motorola 406 R6872
    Text: MOTOROLA SC XSTRS/R F MbE D b3 b ?5 S4 0 0 el37b7 MOTOROLA m0 4 Tb r(*er t*,'s data sheet by 2SC3298B/D T=-3 3 -Q { SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors • Designed for use as High Frequency Drivers in Audio Amplifiers


    OCR Scan     		PDF 2SC3298B/D 2SC3298B 2SA1306B 2sa1306 2SC3298B CI43 Motorola 406 R6872

    2SD1405

    Abstract: 2SA1304 2SA1305 2SA1306 2SA1306A 2SA1306B 2SC3296 2SC3297 2SC3298 2SC3298A
    Text: — 3 O n 8 TO-220 (T S ) P A CK A G E S E R IE S IE M CD l> W H (X) n ✓0 m Application * MAX. A tr 'c Type n o . NPN T V Vertical Out PNP 2SC3298 2SA1306 Audio Drive 2SC3298A 2SA1306A Audio Drive 2SC3298B 2SA1306B General Purpose 2SC3297 2SA1305 2SB1015


    OCR Scan     		PDF O-220 2SC3296 2SA1304 2SC3298 2SA1306 2SC3298A 2SA1306A 2SC3298B 2SA1306B 2SC3297 2SD1405 2SA1304 2SA1305 2SA1306A 2SA1306B

    2SC3298

    Abstract: 2SA1306 TOSHIBA 2SA1306 2SA1306A 2SA1306B 2SC3298A 2SC3298B 2SA1306 2SC3298
    Text: TOSHIBA "st OISCRETE/OPTO> D Ë ^ m T a S O aD0 7 b7 S D ^ f r' 2SC3298 2SC3298A 2SC3298B 9 0 9 7 2 50 T O S H IB A S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS <D I S C R E T E / O P T O ) 5òC 07675 o r - POWER A M PLIFIER APPLICATIONS. n -o Unit in ima


    OCR Scan     		PDF 2SC3298 2SC3298A I2SC3298B 100MHz 2SA1306, 2SA1306A, 2SA1306B DD07b7S 2SC3298A 2SA1306 TOSHIBA 2SA1306 2SA1306A 2SC3298B 2SA1306 2SC3298

    2SA1306B

    Abstract: 2SC3298B CL01 2sa1306 cm72sd
    Text: TOSHIBA DISCRETE/OPTO H5E D • TGTTSSD □ □ 1 7 ñ l cj 3 ■ TOSHIBA TRANSISTOR TOSM 2SC3298B SILICON NPN EPITAXIAL TYPE (PCT PROCESS) "T - ^ - Od POWER AMPLIFIER APPLICATIONS. Unit in ram DRIVER STAGE AMPLIFIER APPLICATIONS. 02»2±a2 FEATURES: . High Transition Frequency : fT=100MHz (Typ.)


    OCR Scan     		PDF Cm72SD 0D17fln 2SC3298B 100MHz 2SA1306B 2SC3298B 2SA1306B CL01 2sa1306

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346