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    2SC1930 Search Results

    2SC1930 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC1930
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1930
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1930
    Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC1930
    Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1930
    Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1930
    Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC1930
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC1930A
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1930A
    Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC1930A
    Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1930A
    Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1930A
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SC1930 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC1930

    Contextual Info: 2SC5171 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : P]i = 200MHz Typ. Complementary to 2SC1930 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan
    2SC5171 200MHz 2SC1930 2SC1930 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2SC1918

    Abstract: 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919
    Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* Cob ºñ°í VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 150 8 5 1400* 1.2 175 80 14 55 650* 2.8 150 150 5 10 130*


    Original
    2SC1901 2SC1902 2SC1903 2SC1904 2SC1905 2SC1906 2SC1907 2SC1908 2SC1909 2SC1910 2SC1918 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919 PDF