2SC1318A Search Results

2SA720A

Abstract: 2SA720A R 2SC1318A DSA003766 2SA720A transistor
Contextual Info: Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. • Absolute Maximum Ratings

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1318A TRANSISTOR（NPN） TO-92 FEATURES 1. EMITTER ∙ Collector output capacitance : 2. COLLECTOR 3. BASE Cob=11 pF TYP ,20 pF (MAX) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

2SA720A

Abstract: 2SC1318A 2SA720A transistor 2sa72
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA720A Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SA0720A

Abstract: 2SC1318A
Contextual Info: Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage Base open VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

2SC1318A

Contextual Info: 2SC1318A 0.5 A, 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Collector output capacitance： Cob=11 pF TYP , 20 pF (MAX) G 2SC1318A-Q 85~170

2SA720A

Abstract: 2SC1318A
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA720A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. • Absolute Maximum Ratings

2SC1318A

Abstract: 2SA0720A 2SA720A
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA0720A 2SA720A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SA0720A

Abstract: 2SA720A 2SC1318A SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit

2SC1318A

Abstract: 2SA0720A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)

Contextual Info: TO-92 Plastic-Encapsulate Transistors 2SC1318A TRANSISTOR（NPN） TO-92 FEATURES 1. EMITTER ∙ Collector output capacitance : 2. COLLECTOR 3. BASE Cob=11 pF TYP ,20 pF (MAX) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units

2SA0720A

Abstract: 2SA720A 2SC1318A
Contextual Info: Transistor 2SA0720A 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SA0720A

Abstract: 2SA720A 2SC1318A
Contextual Info: Transistor 2SA0720A 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SC1318A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1318A TO-92 TRANSISTOR NPN FEATURES • Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

2SA0720A

Abstract: 2SA720A 2SC1318A SC-43A
Contextual Info: Transistors 2SA0720A 2SA720A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

NEC 3358

Abstract: 2SC3498 2SC3301 2SC2144 2sc3607 2SC3346 2sc3632 2SC3631 2SC162 2SC4042
Contextual Info: - 16 0 - m % tt Type No. € Manuf. H 2SC 3326 s Ä 2 2SC4577 2SC 3327 ^ 3K IE 2SC4577 2SC 3329 S $ „ h 2SC 3331 ✓ h 2SC 3332 *" = m m m M Æ 2SC 3330 2SC 3333 M ~$. 2SC 3334 2SC 3335 2SC 3336 r. S JE B 3Ï 2SC 3341 s * 0 ^ X S Ä 2SC 3342 B ÎL B ÎL

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

2SA798

Abstract: 2SA733 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA720A 2SA798 g 2SA743
Contextual Info: 14 - m % T a = 2 5 cC , * E P Í Í T c = 2 5 ‘ ü m 2SA719 & tt fóT 2SA720 2SA720A fâT 2SA732 m M £ & VcBO VcEO (V) (V) Ici D C) Pc Pc* (W) (W) \M ld A / (A) 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 85 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 -10 40 200 -10