2SB906 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Typ.) (Ic=3A, Ib =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C) . Complementary to 2SB906 MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB906 Unit in inm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES : . Low Collector Saturation Voltage : V C E sat =-1.0V(Typ.) (Ic— 3A, IB =-0.3A) 5.2±0.2 j . High Power Dissipation : Pç=20W (Tc-25°C) . Complementary to 2SD1221

B906

Abstract: 2SB906 2SD1221
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)

transistor B906

Abstract: 2SB906 7B1A B-906 B906 2SD1221
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。

transistor B906

Abstract: B906 2SB906 2SD1221 B-906
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)

rj25

Abstract: 2SB906 2SD1221
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Low Collector Saturation Voltage : VcE(sat) = -1 .0 V (Typ.) (IC = - 3 A, IB = -0 .3 A) High Power Dissipation : P q = 20 W (Tc = 25°C)

D1221

Abstract: 2SD1221 2SB906
Contextual Info: 2SD1221 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SD1221 ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 20 W (Tc = 25°C) • 2SB906 とコンプリメンタリになります。

20W power transistor

Contextual Info: TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES: . Low Collector Saturation Voltage : VcE(sat)— l-OV(Typ.) (IC=-3A, IB=-0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)

Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)

2SB906

Abstract: 2SD1221 D1221
Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)

2SB906

Abstract: 2SD1221 B906
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)

D1221

Abstract: 2SB906 2SD1221
Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)

Contextual Info: TO SHIBA 2SB906 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • U nit in mm Low Collector Saturation Voltage : VCE (sat)= -1 -0 V (Typ.) (IC = - 3 A , IB = -0 .3 A ) • High Power Dissipation : P q = 20W (Tc = 25°C)

Contextual Info: 2SB906- SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATION. (a) • • • Low Collector Saturation Voltage : VCE(sat)= —1.0V(Typ.) (ic = —3A, IB = -0 .3 A ) High Power Dissipation : P c = 20W (Tc = 25',C)

2SB927

Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
Contextual Info: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O

2SB906

Abstract: 2SD1221 2sd1221 toshiba
Contextual Info: TO SHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P0 = 2OW Complementary to 2SB906

2sd1221 toshiba

Abstract: D1221 2SB906 2SD1221
Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)

B906

Abstract: 2SB906 2SD1221
Contextual Info: 2SB906 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。

Contextual Info: TOSHIBA 2SB906 Transistor Silicon PNP Triple Diffused Type PCT Process Audio Frequency Power Amplifier Applications Features • Low Collector Saturation Voltage - VCE (sat) = -1 -0V (Typ.) (Ic = 3A, lB = -0.3A) • High Power Dissipation - Pc = 20W (Te = 25°=C)

2SB906

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial 2SB906 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector saturation voltage. Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1

2SB906

Abstract: 2SD1221
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Low Collector Saturation Voltage : VcE(sat) = -1 .0 V (Typ.) (IC = - 3 A, IB = -0 .3 A) High Power Dissipation : P q = 20 W (Tc = 25°C)

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • Low Collector Saturation Voltage : V cE (sat) = - 1 .0 V (Typ.) (IC = - 3 A, IB = - 0 .3 A) High Power Dissipation : P@ = 20 W (Tc = 25°C)

Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)

B906

Abstract: 2SB906 2SD1221
Contextual Info: 2SB906 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。