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    2SB1308 Search Results

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    2SB1308 Price and Stock

    Micro Commercial Components 2SB1308-R-TP

    TRANS PNP 20V 3A SOT89
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    ROHM Semiconductor 2SB1308T100P

    TRANS PNP 20V 3A MPT3
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    DigiKey 2SB1308T100P Reel 1,000
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    Avnet Americas 2SB1308T100P Reel 1,000
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    Micro Commercial Components 2SB1308-P-TP

    TRANS PNP 20V 3A SOT89
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    Micro Commercial Components 2SB1308-Q-TP

    TRANS PNP 20V 3A SOT89
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    ROHM Semiconductor 2SB1308T100Q

    TRANS PNP 20V 3A MPT3
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    DigiKey 2SB1308T100Q Reel 1,000
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    Mouser Electronics 2SB1308T100Q 198
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    Find more 2SB1308 price and stock on Findchips.com

    2SB1308 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1308 Kexin Power Transistor Original PDF
    2SB1308 ROHM Power Transistor (-50V, -3A) Original PDF
    2SB1308 ROHM Power Transistor(50V, 3A) Original PDF
    2SB1308 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB1308 TY Semiconductor Power Transistor - SOT-89 Original PDF
    2SB1308 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1308 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1308 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1308 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1308 ROHM Transistor Selection Guide Scan PDF
    2SB1308-P-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SB1308-Q-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SB1308-R-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SB1308T100P ROHM Power Transistor (-50 V, -3 A) Original PDF
    2SB1308T100Q ROHM Power Transistor (-50 V, -3 A) Original PDF
    2SB1308T100R ROHM Power Transistor (-50 V, -3 A) Original PDF

    2SB1308 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1308

    Abstract: 2SD1963 T100
    Text: 2SB1308 Transistors Power transistor −50V, −3A 2SB1308 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. zExternal dimensions (Unit : mm)


    Original     		PDF 2SB1308 2SD1963. 2SB1308 2SD1963 T100

    MCC BFR

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • • • Case Material: Molded Plastic. Classification Rating 94V-0   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1308 PNP Plastic-Encapsulate


    Original     		PDF 2SB1308 MCC BFR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.5 Collector current ICM : -3 Collector-base voltage V BR CBO : -30 ＳＯＴ－８９ １．ＢＡＳＥ


    Original     		PDF OT-89 2SB1308 OT-89-3L 500TYP 060TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER


    Original     		PDF OT-89-3L OT-89-3L 2SB1308

    2SB1308

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A


    Original     		PDF OT-89 2SB1308 OT-89 -50ollector-base -50mA 30MHz 2SB1308

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SB1308-P 2SB1308-Q 2SB1308-R OT-89

    2SB1308

    Abstract: BJT BF 167
    Text: SPICE PARAMETER 2SB1308 by ROHM TR Div. * 2SB1308 PNP BJT model * Date: 2006/11/14 .MODEL 2SB1308 PNP + IS=500.00E-15 + BF=167.27 + VAF=6.0750 + IKF=13.423 + ISE=500.00E-15 + NE=1.8133 + BR=101.30 + VAR=100 + IKR=.95905 + ISC=2.4533E-12 + NC=1.2497 + NK=.74369


    Original     		PDF 2SB1308 Q2SB1308 00E-15 4533E-12 000E-3 569E-3 05E-12 17E-12 2SB1308 BJT BF 167

    2SB1308Q

    Abstract: 2sb1308r MCC BFR
    Text: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SB1308-P 2SB1308-Q 2SB1308-R 2SB1308Q 2sb1308r MCC BFR

    2sb1308p

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x • • • • 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R 2sb1308p

    MCC BFR

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SB1308-P 2SB1308-Q 2SB1308-R MCC BFR

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x • • • • Case Material: Molded Plastic. Classification Rating 94V-0 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#


    Original     		PDF 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1308 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process better


    Original     		PDF OT-89 060TYP FM140-MH FM150-MH FM160-MH M180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH

    MCC BFR

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SB1308-P 2SB1308-Q 2SB1308-R OT-89 MCC BFR

    SMD TRANSISTOR MARKING BF

    Abstract: bf TRANSISTOR smd BF Marking transistor smd bf MARKING 15A MARKING BF 2SB1308 SMD TRANSISTOR BF
    Text: Transistors SMD Type Power Transistor 2SB1308 Features Low saturation voltage, typically VCE sat = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SB1308 100MHz SMD TRANSISTOR MARKING BF bf TRANSISTOR smd BF Marking transistor smd bf MARKING 15A MARKING BF 2SB1308 SMD TRANSISTOR BF

    B204

    Abstract: 2SB1308 2SD1963 rohm d204 D204
    Text: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the


    Original     		PDF 2SB1308 2SD1963 94S-166-B204) 94S-342-D204) B204 2SB1308 2SD1963 rohm d204 D204

    2SD1963

    Abstract: 2SB1308 T100 RS Marking
    Text: 2SD1963 Transistors Power transistor 50V, 3A 2SD1963 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm)


    Original     		PDF 2SD1963 2SB1308. 2SD1963 2SB1308 T100 RS Marking

    MCC BFR

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SB1308 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25℃


    Original     		PDF 2SB1308 -50Adc 30MHz) OT-89 MCC BFR

    2SB1308

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A -30 3. EMITTER 2


    Original     		PDF OT-89 2SB1308 OT-89 -50mA 30MHz 2SB1308

    2SD1963

    Abstract: B204 2SB1308 94S-166-B204 D204
    Text: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290


    Original     		PDF 2SB1308 2SD1963 94S-166-B204) 94S-342-D204) 2SD1963 B204 2SB1308 94S-166-B204 D204

    BFr pnp transistor

    Abstract: 2SB1308
    Text: 2SB1308 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A -30 3. EMITTER 2 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SB1308 OT-89 -50mA 30MHz BFr pnp transistor 2SB1308

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SB1308-P 2SB1308-Q 2SB1308-R -20rrections,

    2SB1308

    Abstract: No abstract text available
    Text: h -7 > y 7. £ /Transistors 2 S B 1 3 2SB1308 I PNP '> « ;□ > b7>yz$ Epitaxial Planar PNP Silicon Transistor ftS à M M Iflî/L o w Freq. Power Amp. 8 • W fN ’jiEI/Dimensions Unit : mm 1) V cE fsa *)^ 1'« V cE (sa t)= -0 .4 5 V (Max.) *-» -S:


    OCR Scan     		PDF 2SB1308 SC-62 30MHz 001013b

    Untitled

    Abstract: No abstract text available
    Text: 2SB1308 K -7 > v ^ £ / T ransistors 2SB1308 I f c f ^ v P N P y U3> h:7>v*£ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. 1 V cE sat)*'’ '(Ê ^ 'o V c E (s a t)= — 0 .4 5 V (M ax.) i.e io .i (IC /IB = - 1 -5 A /-0 .1 5 A ) 2) r a « » * « * hFEvnms'&m e


    OCR Scan     		PDF 2SB1308 2SB1308 30MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SB1308 2SD1963 Transistors Power Transistor —50V> —3A 2SB1308 •Features •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Low V ce(m i). (M ax. —0.45Vm ax. a t Ic/I b = - 1 . 5 A / —0.15A) 2 ) Excellent DC curre nt gain characteristics. 3 ) C om plem ents the 2S D 1963.


    OCR Scan     		PDF 2SB1308 2SD1963 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.