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    Panasonic Electronic Components 2SB12520Q

    TRANS PNP DARL 100V 5A TO220F-A1
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    2SB1252 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1252 Panasonic TRANS DARLINGTON PNP 100V 5A 3TO-220F-A1 Original PDF
    2SB1252 Panasonic PNP Transistor Darlington Original PDF
    2SB1252 Panasonic Silicon PNP epitaxial planar type Darlington Original PDF
    2SB1252 Panasonic Silicon PNP epitaxial planar type Darlington Original PDF
    2SB1252 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1252 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1252 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1252 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1252 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB12520Q Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 100VCEO 5A TO-220F Original PDF
    2SB1252P Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF
    2SB1252Q Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF

    2SB1252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification 16.7±0.3 4.2±0.2 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO


    Original     		PDF 2SB1252

    2SB1252

    Abstract: 2SD1892
    Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD1892 2SB1252 2SB1252 2SD1892

    2SB1252

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 4.2±0.2 5.5±0.2 M Di ain sc te on na tin nc ue e/ d 2.7±0.2 Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB1252 SC-67 O-220F-A1 2SB1252

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 4.2±0.2 5.5±0.2 M Di ain sc te on na tin nc ue e/ d 2.7±0.2 Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB1252 SC-67 O-220F-A1

    2SB1252

    Abstract: 2SD1892
    Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000


    Original     		PDF 2SB1252 2SD1892 SC-67 O-220F-A1 2SB1252 2SD1892

    2SB1252

    Abstract: No abstract text available
    Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −120 V Collector-emitter voltage (Base open) VCEO −100 V Emitter-base voltage (Collector open) VEBO


    Original     		PDF 2SB1252 SC-67 O-220F-A1 2SB1252

    2SB1252

    Abstract: 2SD1892
    Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit 120 V 100 V 5 V 8 A 5 A Collector to base voltage


    Original     		PDF 2SD1892 2SB1252 2SB1252 2SD1892

    2SB1252

    Abstract: 2SD1892 High frequency transistors
    Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington ● ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –100 V Emitter to base voltage VEBO –5 V


    Original     		PDF 2SB1252 2SD1892 2SB1252 2SD1892 High frequency transistors

    2SB1252

    Abstract: 2SD1892 NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification 2SD1892 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB1252 APPLICATIONS ·Power amplification ·Optimum for 35W high-fidelity output


    Original     		PDF 2SD1892 O-220Fa 2SB1252 O-220Fa) 2SB1252 2SD1892 NPN POWER DARLINGTON TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD1892 2SB1252

    2SB1252

    Abstract: 2SD1892
    Text: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000


    Original     		PDF 2SB1252 2SD1892 SC-67 O-220F 2SB1252 2SD1892

    2SB1252

    Abstract: 2SD1892
    Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD1892 2SB1252 2SB1252 2SD1892

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U n it ! mm • Features • • • • Optimum for 90W hi-fi output High DC current gain hi.E : 5000~30000


    OCR Scan     		PDF 2SD1895 2SB1252 i32flS2

    DIL 1AM

    Abstract: unl darlington 100X2 2SB1252 2SD1892
    Text: Pow er Tnansistors 2SD1892 2S D 1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SB1252 Unit * mm 4.4max. 10.2max. 5.7max. • Features 2.9max.H • O ptim um fo r 3 5 W h i-fi o u tp u t


    OCR Scan     		PDF 2SD1892 2SB1252 10Vx02A 10VX10A 100X2Â DIL 1AM unl darlington 100X2 2SB1252 2SD1892

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1252 2SB1252 Silicon PNP Epitaxial Planar Darlington Type • Package Dimensions U n i t : mm Power Amplifier Complementary Pair with 2SD1872 ■Features 4 .4 m a x . 1 0 .2 m a x . 5 .7 m a x . 2 .9 m a x • O p tim u m fo r 35W hi-fi o u tp u t


    OCR Scan     		PDF 2SB1252 2SD1872 001b277 100x2m' i32flS2

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SD1892 2SD1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1252 U n it * mm 4.4m ax. 10.2m ax. • Features 5.7m ax. 2 .9 m a x > • Optimum for 35W hi-fi output • High DC c u rre n t gain


    OCR Scan     		PDF 2SD1892 2SB1252 2SDI892 32flS2

    2SD1872

    Abstract: darlington complementary 120v 2SB1252
    Text: Power T ransistors 2SB1252 2SB1252 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SD1872 • Features U n it : i 4.4 max. 10 .2 m ax. 5.7max. 2 .9 m a x . • O p tim u m fo r 35W hi-fi o u tp u t


    OCR Scan     		PDF 2SB1252 2SD1872 001b27Ã 2SD1872 darlington complementary 120v 2SB1252

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A

    2SB1547

    Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
    Text: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020


    OCR Scan     		PDF ZSB113Ã 2SB1223 2SB1024 2SA1718 2SB950 2SB1342 2SB1224 2SB1022 2SA1719 2SB1464 2SB1547 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


    OCR Scan     		PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275

    2SB1232

    Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
    Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004


    OCR Scan     		PDF 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226

    2SD1915

    Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
    Text: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915


    OCR Scan     		PDF EPHTc-25 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1912 2SB1274 2SD1915 T0-220MF 2SD1899-Z 2SB1255 2SD1907