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    2SB1181 Search Results

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    2SB1181 Price and Stock

    ROHM Semiconductor 2SB1181TLR

    TRANS PNP 80V 1A CPT3
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    DigiKey 2SB1181TLR Cut Tape 2,411 1
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    2SB1181TLR Digi-Reel 2,411 1
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    2SB1181TLR Reel 2,500
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    Mouser Electronics 2SB1181TLR 284
    • 1 $1.18
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    ROHM Semiconductor 2SB1181TLQ

    TRANS PNP 80V 1A CPT3
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    DigiKey 2SB1181TLQ Digi-Reel 687 1
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    2SB1181TLQ Cut Tape 687 1
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    Mouser Electronics 2SB1181TLQ 278
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    Verical 2SB1181TLQ 3,700 177
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    2SB1181TLQ 300 177
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    2SB1181TLQ 28 27
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    Quest Components 2SB1181TLQ 3,200
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    Chip1Stop 2SB1181TLQ Cut Tape 28
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    CoreStaff Co Ltd 2SB1181TLQ 3,700
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    2SB1181TLQ 300
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    ROHM Semiconductor 2SB1181TLP

    TRANS PNP 80V 1A CPT3
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    ROHM Semiconductor 2SB1181

    TRANSISTOR,BJT,PNP,80V V(BR)CEO,1A I(C),TO-252
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    Quest Components 2SB1181 6,000
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    Others 2SB1181

    TRANSISTOR,BJT,PNP,80V V(BR)CEO,1A I(C),TO-252
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    Quest Components 2SB1181 527
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    2SB1181 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1181 Kexin Power Transistor Original PDF
    2SB1181 ROHM Power Transistor (- 80V, -1A) Original PDF
    2SB1181 TY Semiconductor Power Transistor - TO-252 Original PDF
    2SB1181 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1181 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1181 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1181 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1181 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1181 ROHM Power Transistor (-80V, -1A) Scan PDF
    2SB1181 ROHM CPT, TO-126, TO-126FP Transistors Scan PDF
    2SB1181 ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SB1181 ROHM CPT / TO-126 / TO-126FP Transistors Scan PDF
    2SB1181 ROHM Transistor Selection Guide Scan PDF
    2SB1181F5 ROHM Power Transistor (-80V, -1A) Original PDF
    2SB1181F5 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1181F5 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1181F5 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1181TLP ROHM Power Transistor (-80 V, -1 A) Original PDF
    2SB1181TLP ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DVR PNP 80V 1A SOT-428 TR Original PDF
    2SB1181TLQ ROHM Power Transistor (-80 V, -1 A) Original PDF

    2SB1181 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63 2SB1241 2SD1733 2SD1863 2SD1898

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 R1120A

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 2SB1241 2SD1733 T100

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 9.5±0.5 0.9 0.4+0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 1.5 0.9 5.5+0.3 −0.1 4.0 ±0.3 2.5+0.2 −0.1 (3)


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260

    transistor b54

    Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
    Text: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 96-123-B54) transistor b54 transistor 222 2sB1241 2SD1733 high hfe transistor

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181


    Original     		PDF 2SD1898 2SB1260/2SB1241/2SB1181 50uAdc) 80Vdc) 500mA/20mA) 10Vdc, 50mAdc, 100MHz)

    hight power thyristors

    Abstract: 2SB1181
    Text: Transistors SMD Type Power Transistor 2SB1181 TO-252 Features 6.50 +0.2 5.30-0.2 Hight breakdown voltage and high current. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1


    Original     		PDF 2SB1181 O-252 -500mA, -50mA 100MHz hight power thyristors 2SB1181

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor −80V, −1A 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SB1260 2SB1181 0.4+0.1 9.5±0.5 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.5 5.5+0.3 4.0 ±0.3 2.5+0.2 1.0±0.2 Structure Epitaxial planar type PNP silicon transistor (3)


    Original     		PDF 2SB1260 2SB1181 2SB1260 2SD1898 2SD1733. R1120A

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181


    Original     		PDF 2SD1898 2SB1260/2SB1241/2SB1181 OT-89 500mA/20mA) 10Vdc, 50mAdc, 100MHz) 40x40x0

    220 NK

    Abstract: MODEL Q2SB1181 NE 729 2SB1181
    Text: SPICE PARAMETER 2SB1181 by ROHM TR Div. * 2SB1181 PNP BJT model * Date: 2006/12/04 .MODEL 2SB1181 PNP + IS=220.00E-15 + BF=140.43 + VAF=23.200 + IKF=7.9366 + ISE=220.00E-15 + NE=1.6291 + BR=30.282 + VAR=100 + IKR=13.783 + ISC=274.44E-12 + NC=1.5976 + NK=.83042


    Original     		PDF 2SB1181 Q2SB1181 00E-15 44E-12 000E-3 85E-12 315E-12 69E-12 220 NK MODEL Q2SB1181 NE 729 2SB1181

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1181 TO-252 Features 6.50 +0.2 5.30-0.2 Hight breakdown voltage and high current. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		PDF 2SB1181 O-252 -500mA, -50mA 100MHz

    NPN transistor 2sd1863

    Abstract: 80V 1A NPN Transistor 2SB1260 2SD1733 2SD1768S 2SD1898 2SB1181 2SD1863 Vceo 80V Ic 1A 2SB1241
    Text: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)


    Original     		PDF 2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SB1260 2SB1241 2SB1181. 96-739-D54) 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F NPN transistor 2sd1863 80V 1A NPN Transistor 2SB1181 Vceo 80V Ic 1A

    2sd1733

    Abstract: No abstract text available
    Text: 2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.0A MPT3 Collector CPT3 Base Collector Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE sat)


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 500mA/20mA) 2SD1898 SC-62) OT-89> SC-63) 2sd1733

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100
    Text: Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zDimensions (Unit : mm) 2SB1260 2SB1181 1.0±0.2 zStructure Epitaxial planar type PNP silicon transistor (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 9.5±0.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 2SD1733. R0039A 2SB1241 2SD1733 T100

    ScansU9X27

    Abstract: No abstract text available
    Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)


    OCR Scan     		PDF 2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27

    B1182

    Abstract: B 1182 b1184 D1664
    Text: T r T r a n s sto rs ★ Package m ounted on ceram ic 14 x 18 x 0.7m m • MPT SOT-89 , CPT (DPAK) Types Ty pe . (A) 32 -1 2* MPT (A) CPT 2 S B 1132 — — 2 S B 1184 -5 0 3 — 15 2 S B 1188 2 S B 1182 -32 2 2* 10 2 S B 1189 — 80 2 S B 1260 2SB1181


    OCR Scan     		PDF OT-89) 2SB1181 RXT2907A RXT3906 BCX53 RXT2222A RXT3904 BCX56 RXT-A64 B1182 B 1182 b1184 D1664

    TRANSISTOR b1181

    Abstract: b1181 2SB1181F5
    Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,


    OCR Scan     		PDF 2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 TRANSISTOR b1181 b1181

    Untitled

    Abstract: No abstract text available
    Text: / T ransistors 2SB1181 i t ° 2 * ' > 7 ^ U 7 ° U - : H £ P N P '> U = I > h 7 > y ^ ^ 2SB 1181 Epitaxial Planar PNP Silicon Transistors ISJijJ& Elifril'Uffl/Low Freq. Power Amp. • ^Jfi'tfjiEI./D im ensions Unit : mm ± n m T ‘$>Zo 1) S W U , V c e o = —80V, lc = — 1A


    OCR Scan     		PDF 2SB1181 2SD1733, 2SD1133F5 SC-64 500mA/ 100mA

    BH rn transistor

    Abstract: ROHM 2SD1733 2sb1241
    Text: Transistors Power Transistor -80V, -1A 2SB1260/2SB1181/2SB1241 current. •E x te rn a l dimensions (Units: mm) 2SB1260 2SB1181 co V oeo = - 8 0 V , to = - 1 A C0.5 / lO 2) Good hFE linearity. 3) 21 6 . 5 ± 0 .2 +0.2 2 3 ~ 0.1 0 .5 + 0 .1 c + 0 .2 5 - 0 .1


    OCR Scan     		PDF 2SB1260/2SB1181/2SB1241 2SB1260 2SB1181 2SD1898/ 2SD1863/2SD1733. SC-62 SC-63 2SB1260) 2SB1241) BH rn transistor ROHM 2SD1733 2sb1241

    Untitled

    Abstract: No abstract text available
    Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity


    OCR Scan     		PDF 2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 001470b