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    2SB1144 Search Results

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    2SB1144 Price and Stock

    Rochester Electronics LLC 2SB1144S

    POWER BIPOLAR TRANSISTOR, PNP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1144S Bulk 1,402
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    • 10000 $0.21
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    Aptina Imaging 2SB1144S

    Trans GP BJT PNP 100V 1.5A 1500mW 3-Pin TO-126ML
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SB1144S 7,328 1,716
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    2SB1144S 6,366 1,716
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    onsemi 2SB1144S

    2SB1144 - Power Bipolar Transistor, 1.5A, 100V, PNP, 3 Pin '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SB1144S 13,694 1
    • 1 $0.2058
    • 10 $0.2058
    • 100 $0.1935
    • 1000 $0.1749
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    2SB1144 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1144 Sanyo Semiconductor Low-frequency power amplifier, medium-speed switch Original PDF
    2SB1144 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistors 100V-1.5A Original PDF
    2SB1144 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistor Original PDF
    2SB1144 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1144 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1144 Unknown Silicon PNP Transistor Scan PDF
    2SB1144 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1144 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1144 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1144 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1144 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF
    2SB1144R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1144S Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1144T Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SB1144 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1144

    Abstract: 2SD1684
    Text: Ordering number:2041A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Features Package Dimensions • Adoption of FBET and MBIT processes. · High breakdown voltage. · Low saturation voltage. · Plastic-covered heat sink facilitating high-density


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    PDF 2SB1144/2SD1684 00V/1 2042B 2SB1144/2SD1684] 2SB1144 O-126ML 2SB1144 2SD1684

    2sd1684

    Abstract: 2SB1144
    Text: Ordering number:ENN2041B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Package Dimensions unit:mm 2042B [2SB1144/2SD1684] 8.0 4.0 1.0 1.0 3.3 1.4 • Adoption of FBET and MBIT processes. · High breakdown voltage.


    Original
    PDF ENN2041B 2SB1144/2SD1684 00V/1 2042B 2SB1144/2SD1684] 2SB1144 O-126ML 2sd1684 2SB1144

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    PDF 2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80

    2sc5694

    Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
    Text: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quick selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP


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    PDF O-126 O-126ML O-126LP 2SB1165 2SD1722 2SB1166 2SD1723 2SB1167 2sc5694 TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707

    2SD1684

    Abstract: 2041A 2SB1144 2SD1684B
    Text: Ordering n u m b e r:E N 2041A 2SB1144/2SD1684 NO.2041A PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amp, Medium-Speed Switching Applications F e a tu re s • Adoption of FBET and MBIT processes. • High breakdown voltage • Low saturation voltage.


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    PDF EN2041A 2SB1144/2SD1684 2SB1144 2SD1684 2041A 2SB1144 2SD1684B

    2042A

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR 12E D1 ?117Q7k UQ04Q7S T CORP T -3 3 -J7 2SB1144 P N P / npn Epitaxial Planar Silico n Transistors 2042A 2SD1684 2041A Low Frequency Power Ampf Medium Speed Switching Applications Features . Adoption of FBET, MBIT processes . High breakdown voltage and large current capacity


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    PDF 2SB1144 2SD1684 IS-126 IS-20MA IS-313 IS-313A 2042A

    d1684

    Abstract: 2SB114 2SD168 2SB1144 sb1144
    Text: Ordering number: EN2041A 2SB1144/2SD1684 NOCCHIA PN P/N PN E pitaxial P la n ar Silicon Transistors 100V/1.5A Switching Applications F e a tu r e s • Adoption of FBET and MBIT processes. • High breakdown voltage • Low satu ratio n voltage. •Plastic-covered h eat sink facilitating high-density mounting.


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    PDF EN2041A 2SB1144/2SD1684 00V/1 2SB1144 d1684 2SB114 2SD168 2SB1144 sb1144

    2SB1205

    Abstract: 2SB1143 2sc4675
    Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.


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    PDF 2SB764/2SD863 2SB892/2SD1207* 2SB927/2SD1247* 2SB985/2SD1347* 2SB1131* 2SD1145 2SA1641/2SC4306* 2SB1201/2SD1801* 2SB1202/2SD1802* 2SB1203/2SD1803* 2SB1205 2SB1143 2sc4675

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


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    PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788

    2SB536A

    Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
    Text: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ


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    PDF 2SB13n7M 2SA1782 2SB1320A 2SA1561 2SA1703 2SA1426 2SA1559 2SB1242 2SB536A 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431

    2SA1385

    Abstract: 2SB1256 2SB892 2SA1020 2SB1015 2SA1266 2SA1770 2SB1441 25B1142 2sb111
    Text: m « Type No. 2SB 1426 , 2SB 1427 2SB 1428 — 2SB 1429 2SB 1430 2SB 1431 2SB 1432 ^ 2SB 1433 2SB 1434 2SB 1435 2SB 1436 2SB 1437 2SB 1438 2SB 1439 2SB 1440 2SB 1441 2SB 1442 2SB 1443 2SB 1444 2SB 1445 2SB 1446 2SB 1447 2SB 1448 2SB 1449 2SB 1450 2SB 1451


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    PDF 2SB1395 2SA1266 2SB1446 2SB1434 2SA1363 2SB892 2SB1117 2SB1317 2SB913 2SA1385 2SB1256 2SB892 2SA1020 2SB1015 2SA1770 2SB1441 25B1142 2sb111

    2SB1267

    Abstract: No abstract text available
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF


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    PDF 2SC4727 2SC4728 2SC4729 2SD1235 T0220 2SDI236L 2SD1237L 2SA1469 2SB1267

    2SB1205

    Abstract: 2SD1801
    Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.


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    PDF T0-126LP MT95C123TR 2SB1205 2SD1801

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SA934

    Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
    Text: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54


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    PDF 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA1782 2SA1015 2SA953 2SA836 2SA934 2SA970 2sa933 2sa952 2sB1064 2SA720 2SA836

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR 12E D I CORP WÊÊiÊSÊÊKfÊ2SB1144 2041A 7 n 7 G7 ti DDGS1 7 Ö T'Zl-oJ N P N / pnp Epitaxial P la n a r S ilic o n T ra n sisto rs 2042A Low Frequency Power Amp, Medium Speed Switching Applications Features . Adoption of FBET, MBIT processes


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    PDF 2SB1144 IS-20MA IS-313 IS-313A 1S-126A Q0D37S1

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


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    PDF TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128

    2SD1617

    Abstract: 2sb111 2SB1116 2SB1116A 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124
    Text: - 76 - Ta=25^,*03{ÎTc=25t ít S Veso Vc e o (V) (V) IC(DC) (A) Pc* (W) (W) 2SB11Í5A a n L F PA -80 2SB1116 BU LF PA/ MS S W -60 - 50 -1 2SB1116A s LF PA/ MS SW - 80 -60 -1 2SB1U7 BM LF PA/ MS SW -30 -25 -3 1 2SB1U8 H # L F PA -20 -15 -0. 7 0. 5 n -60


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    PDF 2SB1116 2SB1116A 2SB1119 T0126ML) 2SB1141 2SD1682 2SB1142 2SD1683 2SD1617 2sb111 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    2SB612K

    Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
    Text: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]


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    PDF T0-126ML) T0-126ML O-126 2SD826 2SB559 2SD439 2SB632K 2SB612K 2SB986 2SD1348 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417

    2SB1267

    Abstract: No abstract text available
    Text: C o n tin u e d fro m p re v io u s p a g e Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 °C VcHsat) max @ lc - I b ; Applications VcBO (V) VCEO (V) lc (A) Pc (W) Ti (°C) ; VcE(sat) max (mV) lc (A) Ib (mA) ! It @ VCE •te


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    PDF 2SB986 T0126 2SD1348 2SB1141 T0126ML 2SD1236L T0220 2SB921L 2SB1267

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


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    PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288