2SB1015A Search Results

2SB1015A Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SB1015A		Toshiba	PNP transistor		Original	PDF
2SB1015(A)		Unknown	Silicon PNP Transistor		Scan	PDF
2SB1015A		Toshiba	Silicon PNP triple diffused type transistor for audio frequency amplifier applications		Scan	PDF
2SB1015A		Toshiba	TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE		Scan	PDF

2SB1015A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
B1015A Abstract: B1015 2SB1015A Text: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) • Collector power dissipation: PC = 25 W (Tc = 25°C)	Original	PDF	2SB1015A B1015A B1015 2SB1015A
B1015A Abstract: 2SB1015A B1015 Text: 2SB1015A 東芝トランジスタシリコンPNP三重拡散形 2SB1015A ○ 低周波電力増幅用単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 25 W Tc = 25°C : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A)	Original	PDF	2SB1015A SC-67 2-10R1A B1015A 2SB1015A B1015
2SB1015A Abstract: No abstract text available Text: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C)	Original	PDF	2SB1015A 2SB1015A
B1015A Abstract: 2SB1015A Text: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) • Collector power dissipation: PC = 25 W (Tc = 25°C)	Original	PDF	2SB1015A B1015A 2SB1015A
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	PDF	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
2SC2625 Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600 Text: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300	Original	PDF	2C5000 2N2453DIE 2C2453 2N3807DIE 2C3807 2N6287DIE 2C6287 2N6295DIE 2C6295 2SC2625 power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
9y transistor Abstract: No abstract text available Text: TOSHIBA 2SB1015A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 ± 0.3 M m? T,nw r i n ll p n tn r Si» t u r a fi n n V n l t n erp ' \jlli = _ 1- m 7' V’ Í M 9 Y Ì' ^3.2 ± Q.2	OCR Scan	PDF	2SB1015A 9y transistor
2SB1015A Abstract: No abstract text available Text: T O S H IB A 2SB1015A T O SH IBA TRANSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIO NS • • Low Collector Saturation Voltage : v CE sat = -1 .7 V (Max.) dC = - 3 A, IB = -0 .3 A) : pc = 25 W (Tc = 25°C)	OCR Scan	PDF	2SB1015A 2SB1015A
Untitled Abstract: No abstract text available Text: TOSHIBA 2SB1015A T O SH IBA TRA NSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A Unit in mm A U D IO FREQUENCY P O W ER A M PLIFIER APPLICATIO NS • • 10 ± 0 .3 Low Collector Saturation Voltage : VcE sat = -1 .7 V (Max.) dC = - 3 A, IB = -0 .3 A)	OCR Scan	PDF	2SB1015A