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Amphenol Aerospace JT06RE-20-2SB(101) PLUG
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DigiKey	JT06RE-20-2SB(101)	Bulk			5	1 - 10 $356.734 100 $356.734 1000 $356.734 10000 $356.734	Buy Now
Amphenol Aerospace JT06RE-22-2SB(101) PLUG
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DigiKey	JT06RE-22-2SB(101)	Bulk			4	1 - 10 $424.0425 100 $424.0425 1000 $424.0425 10000 $424.0425	Buy Now
Amphenol Aerospace JT02RP-22-2SB(101) RECEPT
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DigiKey	JT02RP-22-2SB(101)	Bulk			4	1 - 10 $409.17 100 $409.17 1000 $409.17 10000 $409.17	Buy Now
Amphenol Aerospace JT00RE-24-2SB(101) RECEPT
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DigiKey	JT00RE-24-2SB(101)	Bulk			4	1 - 10 $483.9775 100 $483.9775 1000 $483.9775 10000 $483.9775	Buy Now
Amphenol Aerospace JT07RE-22-32SB(101) RECEPT
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DigiKey	JT07RE-22-32SB(101)	Bulk			5	1 - 10 $360.772 100 $360.772 1000 $360.772 10000 $360.772	Buy Now

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2SB101 Datasheets (139)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB101	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SB101	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SB101	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SB101	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SB101	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB101	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB101	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB101	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SB101	Unknown	Cross Reference Datasheet	Scan	PDF
2SB1010	Various Russian Datasheets	Transistor	Original	PDF
2SB1010	Unknown		Scan	PDF
2SB1010	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB1010	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB1010	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

2SB1010	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1010	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1010	Unknown	Cross Reference Datasheet	Scan	PDF
2SB1010	ROHM		Scan	PDF
2SB1010	ROHM	TO-92L, TO-92LS, MRT Transistors	Scan	PDF
2SB1010	ROHM	TO-92, SPT Type Transistors	Scan	PDF

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2SB101 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB1015 Abstract: 2sB1015 y 2SD1406 Text: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier	Original	PDF	2SB1015 O-220Fa 2SD1406 2SB1015 2sB1015 y 2SD1406
2SD1376 Abstract: Darlington NPN Silicon Diode npn 100v 1.5a 2SB1012 Text: Inchange Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION	Original	PDF	2SD1376 O-126 2SB1012 2SD1376 Darlington NPN Silicon Diode npn 100v 1.5a 2SB1012
2SB1019 Abstract: 2SD1412 Text: JMnic Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION	Original	PDF	2SB1019 O-220Fa 2SD1412 O-220Fa) 2SB1019 2SD1412
2SB1018 Abstract: 2SD1411 Text: JMnic Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications ・High current switching applications	Original	PDF	2SB1018 O-220F 2SD1411 O-220F) 2SB1018 2SD1411
2sb1018 Abstract: 2SD1411 2sB101 Text: Inchange Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications	Original	PDF	2SB1018 O-220F 2SD1411 O-220F) 2sb1018 2SD1411 2sB101
D1411A Abstract: 2SB1018A 2SD1411A Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)	Original	PDF	2SD1411A 2SB1018A D1411A 2SB1018A 2SD1411A
B1018A Abstract: B1018 2SD1411A 2SB1018A Text: 2SB1018A 東芝トランジスタシリコンPNP三重拡散形 PCT方式 2SB1018A 通信工業用 ○ 大電力スイッチング用 ○ 電力増幅用単位: mm • 許容コレクタ電流が大きい。 : IC = − 7 A • コレクタ飽和電圧が低い。	Original	PDF	2SB1018A 2SD1411A 2-10R1A 20070701-JA B1018A B1018 2SD1411A 2SB1018A
2SD1407 Abstract: 2SB1016 Text: 2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)	Original	PDF	2SB1016 SC-67 2SD1407 -150V 2SD1407 2SB1016
2SB1015 Abstract: 2SD1406 Text: SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier	Original	PDF	2SB1015 O-220Fa 2SD1406 2SB1015 2SD1406
2SB1016 Abstract: 2SD1407 2SB-1016 Text: SavantIC Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING	Original	PDF	2SB1016 O-220Fa 2SD1407 2SB1016 2SD1407 2SB-1016
2SD1406 Abstract: 2SB1015 RL15A Text: SavantIC Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 · APPLICATIONS ·For audio frequency power	Original	PDF	2SD1406 O-220Fa 2SB1015 O-220Fa) 2SD1406 2SB1015 RL15A
2SB1018A Abstract: 2SD1411A Text: SavantIC Semiconductor Product Specification 2SB1018A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411A APPLICATIONS ·Power amplifier applications ·High current switching applications	Original	PDF	2SB1018A O-220F 2SD1411A O-220F) 2SB1018A 2SD1411A
pnp 4A switching Abstract: 2SB1018 2SD1411 Text: SavantIC Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING	Original	PDF	2SB1018 O-220Fa 2SD1411 O-220Fa) C100V; pnp 4A switching 2SB1018 2SD1411
5v 25w ta amplifier Abstract: 2SB1017 2SB1018 2SD1408 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1017 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1408 APPLICATIONS ·Designed for power amplifier applications.	Original	PDF	2SB1017 2SD1408 5v 25w ta amplifier 2SB1017 2SB1018 2SD1408

Hitachi DSA001650 Abstract: No abstract text available Text: 2SB1012 K Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 ID 5 kΩ (Typ) 1 kΩ (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item	Original	PDF	2SB1012 2SD1376 O-126 D-85622 Hitachi DSA001650
B1018a Abstract: b1018 2SB1018A 2SD1411A Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)	Original	PDF	2SB1018A 2SD1411A B1018a b1018 2SB1018A 2SD1411A
Hitachi DSA00279 Abstract: No abstract text available Text: 2SD1376 K Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage	Original	PDF	2SD1376 2SB1012 Hitachi DSA00279
2SD1411 Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)	OCR Scan	PDF	2SD1411 2SB1018 2SD1411
Untitled Abstract: No abstract text available Text: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A	OCR Scan	PDF	2SB1018 2SD1411 2-10L1A
2SB1015 Abstract: IC 4025 Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406	OCR Scan	PDF	2SB1015 2SD1406 -50mA, 2SB1015 IC 4025
2SB1016 Abstract: 1C13MAX Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency	OCR Scan	PDF	2SB1016 1C13MAX. -100V 2SD1407 Q76-CU5 -50mA, 2SB1016 1C13MAX
Untitled Abstract: No abstract text available Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "st 56C DI SCRETE/OPTO SILICON PNP TRIPLE DIFFUSED TYPE DE I TOc]?aSD DD073TS 07395 O T " 3 5 “/ ? 2SB1017 _ Unit in mm POWER AMPLIFIER APPLICATIONS. 1 0 . 3 MAX, 05.2±O.Z 7.0 FEATURES: Z1 . Good Linearity of hpE	OCR Scan	PDF	DD073TS 2SB1017 2SD1408
761b nec Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B Text: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338	OCR Scan	PDF	2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B
2SD1407 Abstract: 2SB1016A toshiba 2sd1407 2SD1407A Text: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A Unit in mm High Breakdown Voltage : V q e O = —100V Low Collector-Emitter Saturation Voltage : VCE s a t = -2-0V (Max.) Complementary to 2SD1407A	OCR Scan	PDF	2SB1016A --100V 2SD1407A 2SD1407 2SB1016A toshiba 2sd1407

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2SB101 Price and Stock

Amphenol Aerospace JT06RE-20-2SB(101)

Amphenol Aerospace JT06RE-22-2SB(101)

Amphenol Aerospace JT02RP-22-2SB(101)

Amphenol Aerospace JT00RE-24-2SB(101)

Amphenol Aerospace JT07RE-22-32SB(101)

2SB101 Datasheets (139)

2SB101 Datasheets Context Search

2SB1015

2SD1376

2SB1019

2SB1018

2sb1018

D1411A

B1018A

2SD1407

2SB1015

2SB1016

2SD1406

2SB1018A

pnp 4A switching

5v 25w ta amplifier

Hitachi DSA001650

B1018a

Hitachi DSA00279

2SD1411

Untitled

2SB1015

2SB1016

Untitled

761b nec

2SD1407