2SA963 Search Results

2SC2209

Abstract: 2SA963
Contextual Info: •Power Transistors 2SC2209 2SC2209 Silicon NPN Epitaxial Planar Type A F Power Amplifier Complementary Pair with 2SA963 ■ Features Package Dimensions Uni t ! mm - • Large collector pow er dissipation Pc « 5W output in com plem entary pair with 2SA963

2SC2209

Abstract: 2SA963
Contextual Info: Power T ransistors 2SC2209 2SC2209 Silicon NPN Epitaxial Planar Type Package Dimensions A F Power Amplifier Complementary Pair with 2SA963 Uni t ! mm • Features • L arge collector pow er dissipation Pc • 5W o utp ut in com plem entary pair w ith 2SA963

2SA963

Abstract: 2SC2209 TI003
Contextual Info: AOK AOK Semiconductor P ro d u c t S p ecificatio n 2SA963 Silicon PNP P ow er Transistors DESCRIPTION • W ith T O -1 2 6 p a c k a g e • C o m p le m e n t to ty p e 2 S C 2 2 0 9 • H ig h c o lle c to r p o w e r d is s ip a tio n APPLICATIONS • F o r lo w -fre q u e n c y p o w e r a m p lific a tio n

2SA963

Abstract: 2SC2209
Contextual Info: Power T ransistors 2SA963 2SA963 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Amplifier Complementary Pair with 2SC2209 ■ Features • Large collector pow er dissipation Pc • 4 ~ 5 W output in com plem entary pair with 2SC2209 ■ Absolute Maximum Ratings (Ta=25°C)

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-emitter voltage (Base open)

Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol

2SC2209

Abstract: 2SA0963 2SA963
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 M Di ain sc te on na tin nc ue e/ d • Large collector power dissipation PC

Collector 5v npn TRANSISTOR

Abstract: 2SC2209 2SA963
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 APPLICATIONS ·Designed for low frequency power amplification.

2SA963

Abstract: 2SC2209 20F200
Contextual Info: Power T ranslstors 2SA963 2SA963 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Pow er Am plifier C om plem entary Pair with 2 S C 2 2 0 9 ■ Features • Large collector pow er dissipation Pc • 4 ~ 5 W output in com plem entary pair with 2SC2209

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC2209 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC2209 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SC220

Abstract: 2SA963 2SC2209
Contextual Info: Inchange Semiconductor Product Specification 2SA963 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2209 ·High collector power dissipation APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION

2SC2209

Abstract: 2SA963
Contextual Info: PANASONIC INDL/ELEKiSEfll} 72C D | t,T35SS4 DDDÔ7ÛD 5 _ ‘_ 2SA963 2SA963 '> ij i] V P N P 2SC2209 i 3 \s~f \ s — j ~ f î Z / S i P N P Epitaxial Planar U^ Power Amplifier lJ /C om plem entary Pair with

2SC2209

Abstract: 2SA963
Contextual Info: SavantIC Semiconductor Product Specification 2SC2209 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA963 ·High collector power dissipation APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION

2SA963

Abstract: 2SC2209
Contextual Info: JMnic Product Specification 2SA963 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2209 ・High collector power dissipation APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter

2SC2071

Abstract: 2sa979 2sa939 2SA910 2SA987 2SA991 2SC2238 2SA968 2SA939 B 2SA995 2SC2011
Contextual Info: - 18 - Ta=25,C.*6HáTc=25,C M 2SA937MLN 2SA939 2SA940 2SA949 2SA950 2SA952 2SA953 2SA954 2SA963 2SA965 2SA966 2SA968 2SA968A 2SA968B 2SA970 2SA979 2SA984 2SA984K 2SA985 2SA985A 2SA987 2SA988 2SA990 2SA991 2SA992 2SA995 2SA999 2SA999L 2SA1005 2SA1006 2SA1006A

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SC2209 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA0963 2SA963 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS